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    PM7520

    Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
    Text: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION


    Original     		PDF BLW32 BLW33 ECO7806 PM7520 RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25

    transistor MAR 826

    Abstract: A Wideband hybrid coupled amplifier 470 - 860 MHz Wideband hybrid coupled amplifier BLV57 Philips 2222 344 capacitors NCO8101 Philips 2222 capacitor philips 2222 030 capacitor philips 111J
    Text: APPLICATION NOTE A Wideband hybrid coupled amplifier 470 − 860 MHz with 2 balanced transistors BLV57 NCO8101 Philips Semiconductors A Wideband hybrid coupled amplifier (470 − 860 MHz) with 2 balanced transistors BLV57 CONTENTS 1 ABSTRACT 2 INTRODUCTION


    Original     		PDF BLV57 NCO8101 SCA57 transistor MAR 826 A Wideband hybrid coupled amplifier 470 - 860 MHz Wideband hybrid coupled amplifier BLV57 Philips 2222 344 capacitors NCO8101 Philips 2222 capacitor philips 2222 030 capacitor philips 111J

    2322-211

    Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid BLV57 NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz
    Text: APPLICATION NOTE A wide-band class-AB hybrid coupled amplifier 470 − 860 MHz with two balanced transistors BLV57 NCO8205 Philips Semiconductors A wide-band class-AB hybrid coupled amplifier Application Note (470 − 860 MHz) with two balanced transistors BLV57


    Original     		PDF BLV57 NCO8205 BLV57 SCA57 2322-211 Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz

    linear amplifier 470-860

    Abstract: PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables
    Text: APPLICATION NOTE A wide-band linear power amplifier 470 − 860 MHz with two transistors BLW34 ECO7901 Philips Semiconductors A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS


    Original     		PDF BLW34 ECO7901 SCA57 linear amplifier 470-860 PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables

    NCO8201

    Abstract: KL-117 BLV57 NCO8101 etri fan 99
    Text: APPLICATION NOTE Construction of the 470 − 860 MHz BLV57 wideband amplifier NCO8201 Philips Semiconductors Construction of the 470 − 860 MHz BLV57 wideband amplifier CONTENTS 1 INTRODUCTION 2 PRINTED CIRCUIT BOARD 3 HEATSINK 4 MECHANICAL MACHINING OF THE HEATSINK


    Original     		PDF BLV57 NCO8201 BLV57 NCO8101 SCA57 NCO8201 KL-117 etri fan 99

    PTFA043002

    Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010

    PTFA043002E

    Abstract: PTFA043002 LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56

    Untitled

    Abstract: No abstract text available
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


    Original     		PDF PTFA043002E PTFA043002 300-watt, H-30275-4

    linear amplifier 470-860

    Abstract: RPAP470860M10 470-860 mhz Power amplifier w
    Text: RPAP470860M10 Preliminary Solid State Broadband High Power Pallet Amplifier 470-860 MHz – 10W The RPAP470860M10 is a 10W pallet amplifier for the 470-860 MHz band. This Class A pallet amplifier utilizes three MOSFET gain stages providing typical power gain of 39 dB at 10 Watts


    Original     		PDF RPAP470860M10 RPAP470860M10 -54dB linear amplifier 470-860 470-860 mhz Power amplifier w

    linear amplifier 470-860

    Abstract: RPAP470860M05 470-860 mhz Power amplifier 5 w RF GAIN LTD
    Text: RPAP470860M05 Preliminary Solid State Broadband High Power Pallet Amplifier 470-860 MHz – 5W The RPAP470860M05 is a 5W pallet amplifier for the 470-860 MHz band. This Class A pallet amplifier utilizes three MOSFET gain stages providing typical power gain of 26 dB at 5 Watts


    Original     		PDF RPAP470860M05 RPAP470860M05 -54dB linear amplifier 470-860 470-860 mhz Power amplifier 5 w RF GAIN LTD

    MRF373

    Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
    Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13

    PTFA043002E

    Abstract: SCHEMATIC DIAGRAM 3.3kv
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold


    Original     		PDF PTFA043002E PTFA043002 300-watt, PTFA043002E SCHEMATIC DIAGRAM 3.3kv

    thermistor r5t

    Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
    Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010

    MOSFET J132

    Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
    Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373/D MRF373 MRF373S MRF373S MRF373/D MOSFET J132 mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20206 1.0 Watt, 470-860 MHz RF Power Transistor Description The 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP


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    TRIMMER capacitor 5-60 pF

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20237 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and


    OCR Scan     		PDF R35-3 TRIMMER capacitor 5-60 pF

    470-860 mhz Power 5 w

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20091 30 Watts, 470-860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation


    OCR Scan     		PDF -16dB, 470-860 mhz Power 5 w

    470-860

    Abstract: 470-860 mhz Power amplifier w C19C
    Text: ERICSSON ^ PTF 10049 85 Watts, 470-860 MHz LDMOS Field Effect Transistor Description The 10049 is an internally matched, common source, n-channel enhancement-mode lateral M O S F E T intended for large signal amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts minimum


    OCR Scan     		PDF UT-85-25 470-860 470-860 mhz Power amplifier w C19C

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON S PTB 20011 20 Watts, 470 - 860 MHz UHF TV Linear Power Transistor Key Features Description The 20011 is a class A, NPN, common emitter RF Power Transistor intended for 26.5 VDC operation across the 470-860 MHz frequency band. It is rated at 20 Watts output power and may be used for both


    OCR Scan     		PDF -16dB,

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20206 1.0 Watt, 470-860 MHz RF Power Transistor D escription The 20206 is a class A, NPN, common emitter RF power transistor intended for 20 Vdc operation across the 470 to 860 MHz frequency band. Rated at 1.0 w att minimum output power, it may be used for


    OCR Scan     		PDF

    TV power transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20081 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power.


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    ERICSSON 20101

    Abstract: TV power transistor tic55
    Text: ERICSSON ^ PTB 20101 175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor Description The 20101 is a class AB, NPN, com m on em itter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation,


    OCR Scan     		PDF

    IC lc 8635 320

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20011 20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor Description The 20011 is an NPN com m on em itter UHF power transistor intended for 26.5 Vdc class A operation from 470 to 860 MHz. It is rated at 20 w atts p-sync output power, and may be used for both CW and PEP


    OCR Scan     		PDF

    TV power transistor

    Abstract: PTB20101
    Text: ERICSSON PTB 20101 175 Watts P-Sync, 470 - 860 MHz UHF TV Power Transistor Key Features Description • • • • • The 20101 is a class AB, NPN, common emitter RF Power Transistor intended for 28 VDC operation across the 470-860 MHz frequency band. It is rated at 175 Watts P-Sync mini­


    OCR Scan     		PDF 2x200mA 2x200mA TV power transistor PTB20101