ISL9504
Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS
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SOT23-5 AE31
Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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Q8303
Abstract: JD smd diodes C4722 C5807 C8450 p66 apple XTAL 25mhz 50ppm SMC H8S2116 U6700 Socket AM2
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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Foxconn apple
Abstract: C900 C4722 FERR-120-OHM-1 C4620 ISL9504 foxconn g41 SOT23-5 AE31 M/sh 40/085/21/INDUCTOR DE 100Uf SMD PACKAGE JD smd diodes
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS
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ISL9504
Abstract: C4722 Foxconn apple foxconn C8450 PP5V U8900 Socket AM2 2P16 p66 apple
Text: 8 6 7 5 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A JD 47 MS MS MS PS PS PS PS PS PS PS PS PS JD JD JD JD JD JD JD PS
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ZH510
Abstract: XW604 L9120 M5607 L9140 C4722 L9300 PP9010 ZH610 74LVC1G04DBVG4
Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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C4751 1
Abstract: ISL9504 5d7 switching regulator 820-20 C4722 pwm INVERTER LCD CAP1210 C93-02 D8310 p66 apple
Text: 8 6 7 5 D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 33 34 38 41 42 43 44 45 46 47 53 54 PDF JD JD MY JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD JD JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD 1 2 3 4 5 6 7
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ZH506
ZH507
ZH508
ZH509
ZH510
ZH511
ZH512
ZH513
ZH514
ZH515
C4751 1
ISL9504
5d7 switching regulator
820-20
C4722
pwm INVERTER LCD
CAP1210
C93-02
D8310
p66 apple
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C5300
Abstract: C9112 ISL9504 C4722 82d5 C4751 1 TLM8 C9750 J6602 ISL6269
Text: 8 7 6 5 D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 33 34 38 41 42 43 44 45 46 47 53 54 PDF JD JD MY JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD JD JD JD MY JD JD JD JD JD JD JD JD JD JD JD JD 1 2 3 4 5 6 7
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U9700
XC7200
XW602
XW605
XW5800
XW5900
XW7201
XW7300
XW7400
C5300
C9112
ISL9504
C4722
82d5
C4751 1
TLM8
C9750
J6602
ISL6269
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MARKING tAN SOT-23
Abstract: 101J
Text: Terminator and Filter Networks Applications • High speed logic ■ EMI/RFI suppression ■ AC termination ■ Clock signal termination ■ Low pass filter Electrical Characteristics E Resistance Range. . . . . . 10Ω to 1MΩ Capacitance Range . . . . 10pF to 180pF
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180pF
100mW
OT-23
OT-143
MARKING tAN SOT-23
101J
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BF1108_BF1108R
Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Text: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
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BF1108;
BF1108R
OT143B
BF1108)
OT143R
BF1108R)
BF1108
BF1108R
BF1108_BF1108R
BF1108_1108R_3
MARKING CODE CGK
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MARKING tAN SOT-23
Abstract: AAD SOT-143
Text: AC Terminator Quad Common Applications • AC termination ■ Reduce transmission line effects ■ Clock line and constant data rate line termination ■ Low pass filter ■ Power supply filter Electrical Characteristics E Resistance Range. . . . . . 10Ω to 10KΩ
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220pF
100mW
MARKING tAN SOT-23
AAD SOT-143
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sc74750
Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes
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OT346
SC-59)
sc74750
MSE-200
PESD5VOL4UW
KMZ52
kmz51
smd transistor BC557
PBLS1504V
2n5551 smd
PMBS3904, PMSS3904
sc7921
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Untitled
Abstract: No abstract text available
Text: BB503M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0835-0500 Previous ADE-208-811C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz
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BB503M
REJ03G0835-0500
ADE-208-811C)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB503M
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BB501M
Abstract: REJ03G0831-0600
Text: BB501M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0831-0600 Previous ADE-208-700D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;
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BB501M
REJ03G0831-0600
ADE-208-700D)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB501M
REJ03G0831-0600
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ADE-208-811C
Abstract: BB503M
Text: BB503M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0835-0500 Previous ADE-208-811C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz
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BB503M
REJ03G0835-0500
ADE-208-811C)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB503M
ADE-208-811C
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BB501M
Abstract: DSA003643
Text: BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz
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BB501M
ADE-208-700D
200pF,
OT-143Rmod)
BB501M
DSA003643
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BB601M
Abstract: DSA003711 DSA00371110.
Text: BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702C Z 4th. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz
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BB601M
ADE-208-702C
200pF,
OT-143mod)
BB601M
DSA003711
DSA00371110.
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811b transistor
Abstract: BB503M Hitachi DSA00395
Text: BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811B Z 3rd. Edition Jul. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz
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BB503M
ADE-208-811B
200pF,
OT-143mod)
BB503M
811b transistor
Hitachi DSA00395
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BB503M
Abstract: ADE-208-811C DSA003644
Text: BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz
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BB503M
ADE-208-811C
200pF,
OT-143Rmod)
BB503M
ADE-208-811C
DSA003644
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Hitachi DSA0076
Abstract: BB601M BIC601M
Text: BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz
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BB601M
ADE-208-702D
200pF,
OT-143mod)
BIC601M
Hitachi DSA0076
BB601M
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329 8-pin
Abstract: No abstract text available
Text: Section 10. Index reading manufacturer's graphs 53 selection 53 size reduction via power sharing resistor 54 High input voltage operation 34 A Accuracy. See Voltage accuracy B Bandgap. See References voltage Battery 26 Inrush surge, controlling 34 Isolation 47
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LP2950/2951
329 8-pin
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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VN2410M
Abstract: 3XXC
Text: TELEDYNE COMPONENTS EäE fiW b G H D 000^47^ 3 m T-29-25 VN2410 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS FET ORDERING INFORMATION VN2410CHP Sorted Chips in Waffle Pack TO-226AA TO-92 Plastic Package VN2410L TO-237 Plastic Package VN2410M 240V, 10 ohm
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T-29-25
VN2410
O-226AA
O-237
VN2410CHP
VN2410L
VN2410M
VN2410U
3XXC
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2N2907 SOT-23
Abstract: 1N4004 SOD-123 BC517 "cross reference" BC8488 BAT16-046 1N4148 SOD-323 A BCS59 BC548 sot 2N2907 CROSS BC548 cross reference
Text: SIEMENS Leaded Devices Cross Reference SMD-Packages SOD-123 SOD-323 SOT-23 SOT143 SOT-323 1N4001 1N4002 1N4003 1N4004 1N40Q1 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 SOT-89 SOT-223 BAW78A BAW78B BAW 78C BAW78D BAW79A BAW79B BAW79C BAW79D BAS78A BAS78B
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1N4001
1N4002
1N4003
1N4004
1N40Q1
1N4002
1N4003
1N4004
1N4148
OD-123
2N2907 SOT-23
1N4004 SOD-123
BC517 "cross reference"
BC8488
BAT16-046
1N4148 SOD-323 A
BCS59
BC548 sot
2N2907 CROSS
BC548 cross reference
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