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    46E TRANSISTOR Search Results

    46E TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    46E TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LZ2354AJ

    Abstract: U2354A 7 segment c dlh1 46E transistor 4P4 amplifier
    Text: LZ2354AJ 1/3 type B/W CCD Area Sensor for EIA LZ2354AJ PIN CONNECTIONS DESCRIPTION U2354J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximately 410000 pixels (horizontal 811 X vertical


    Original     		PDF LZ2354AJ U2354J 16-PfN oB7088 4930B1 2354AJ LZ2354AJ U2354A 7 segment c dlh1 46E transistor 4P4 amplifier

    MJE 2160 N

    Abstract: power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050
    Text: LESHAN RADIO COMPANY, LTD. Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter


    Original     		PDF MDC5001T1 OT-363 MDC5000 MDC5001T MJE 2160 N power BJT PNP spice model stabiliser circuit diagram BJT with V-I characteristics 500E 800E MDC5001T1 transistor mje 2050

    gsm booster circuit

    Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
    Text: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers


    Original     		PDF SG1009Q42007 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit mrf373al u880 RF MODULATORS mrf9030n MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060

    MJE 2160 N

    Abstract: 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1
    Text: Low Voltage Bias Stabilizer with Enable MDC5001T1 SILICON SMALLBLOCKTM • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors INTEGRATED CIRCUIT • Provides Stable Bias Using a Single Component Without Use of Emitter


    Original     		PDF MDC5001T1 OT-363 MDC5000 MDC5001T MJE 2160 N 9018 transistor NPN stabiliser circuit diagram 10E-18 BJT with V-I characteristics power BJT PNP spice model 500E 800E MDC5001T1

    MRF9811

    Abstract: ic3 pin diagram
    Text: ON Semiconductort Low Voltage Bias Stabilizer with Enable MDC5001T1 • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction • • • • • and Field Effect Transistors Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components


    Original     		PDF MDC5001T1 MRF9811 MDC5000 ic3 pin diagram

    MRF9742

    Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF MHW1184L MHW1224L MHW1254L MHW1304L MRF9742 MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1

    data sheet transistor 9018 NPN

    Abstract: 500E 800E MDC5001 MDC5001T1 MRF941 MRF9411 motorola rf spice
    Text: MOTOROLA Order this document by MDC5001T1/D SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast


    Original     		PDF MDC5001T1/D MDC5001T1 data sheet transistor 9018 NPN 500E 800E MDC5001 MDC5001T1 MRF941 MRF9411 motorola rf spice

    500E

    Abstract: 800E MDC5001 MDC5001T1 MRF941 MRF9411 IC-310 transistor mje 2050 ic3 pin diagram
    Text: ON Semiconductort Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N−Type Discrete Bipolar Junction • • • • • and Field Effect Transistors Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components


    Original     		PDF r14525 MDC5001T1/D 500E 800E MDC5001 MDC5001T1 MRF941 MRF9411 IC-310 transistor mje 2050 ic3 pin diagram

    Untitled

    Abstract: No abstract text available
    Text: Back ON Semiconductort Low Voltage Bias Stabilizer with Enable MDC5001T1 • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components


    Original     		PDF r14525 MDC5001T1/D

    MRF941

    Abstract: mrf9411 500E 800E MDC5001 MDC5001T1
    Text: ON Semiconductort Low Voltage Bias Stabilizer with Enable MDC5001T1 • Maintains Stable Bias Current in N–Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components


    Original     		PDF MDC5001T1 r14525 MDC5001T1/D MRF941 mrf9411 500E 800E MDC5001 MDC5001T1

    TL750L

    Abstract: TL750L05CD TL751L TL751L05CD
    Text: TL750L, TL751L SERIES LOW-DROPOUT VOLTAGE REGULATORS SLVS017M – SEPTEMBER 1987 – REVISED MAY 2002 D D D D D Very Low Dropout Voltage, Less Than 0.6 V at 150 mA Very Low Quiescent Current TTL- and CMOS-Compatible Enable on TL751L Series 60-V Load-Dump Protection


    Original     		PDF TL750L, TL751L SLVS017M TL750L TL750L TL750L05CD TL751L05CD

    TL75L05Q

    Abstract: No abstract text available
    Text: TL750L, TL751L SERIES LOW-DROPOUT VOLTAGE REGULATORS SLVS017K – SEPTEMBER 1987 – REVISED JANUARY 2002 D D D D Very Low Dropout Voltage, Less Than 0.6 V at 150 mA Very Low Quiescent Current TTL- and CMOS-Compatible Enable on TL751L Series 60-V Load-Dump Protection


    Original     		PDF TL750L, TL751L SLVS017K TL750L TL75L05Q

    Untitled

    Abstract: No abstract text available
    Text: TL750L, TL751L SERIES LOW-DROPOUT VOLTAGE REGULATORS SLVS017N – SEPTEMBER 1987 – REVISED AUGUST 2002 D D D D Very Low Dropout Voltage, Less Than 0.6 V at 150 mA Very Low Quiescent Current TTL- and CMOS-Compatible Enable on TL751L Series 60-V Load-Dump Protection


    Original     		PDF TL750L, TL751L SLVS017N TL750L O-220AB TL750L

    TL750L10

    Abstract: No abstract text available
    Text: TL750L, TL751L SERIES LOW-DROPOUT VOLTAGE REGULATORS SLVS017L – SEPTEMBER 1987 – REVISED APRIL 2002 D D D D D Very Low Dropout Voltage, Less Than 0.6 V at 150 mA Very Low Quiescent Current TTL- and CMOS-Compatible Enable on TL751L Series 60-V Load-Dump Protection


    Original     		PDF TL750L, TL751L SLVS017L TL750L TL750L10

    G675A

    Abstract: BUL53A BUL53B G175 G275A G375A G575A G875A G875DE G975A
    Text: 46E T> m 6 1 3 3 1 6 7 DDDDHlb 5 3 0 • S f l L B DIFFUSION SEMEFABI S E H E L A B DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB "P G175 chip family J LTD * Z S 'V l The G 175 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new


    OCR Scan     		PDF -126x126 -56x29mils G575A G67SA G375A G275A G975A G875A G875DE BUL53B G675A BUL53A G175

    2n4878

    Abstract: 2N404S 2N4880
    Text: CA L O GI C CÖRP 46E D calodic ^ • 1644322 0000300 2 ■ C 6 C Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier CO RPORA TION \J T - n - n 2N4044/2N4045/2N4100/2N4878/2N4879/2N4880 FEATURES • • • • • High Gain at Low Current


    OCR Scan     		PDF 2N4044/2N4045/2N4100/2N4878/2N4879/2N4880 2N4044, 2N4878 2N4100, 2N4879 2N4045, 2N4880 10jiA 2n4878 2N404S 2N4880

    2n5118

    Abstract: No abstract text available
    Text: CALOGIC 46E CORP ICGC 1644322 D00D320 fi I> caloric CORPORATION V 2N5117-2N5119 FEATURES • • • • • A B S O L U T E MAXIMUM RATINGS Ta - 25°C unless otherwise noted High Gain at Low Current Low Output Capacitance G oo d hFE Match Tight V b e Tracking


    OCR Scan     		PDF D00D320 2N5117-2N5119 10jiA 2n5118

    WF VQE 22 c

    Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
    Text: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E


    OCR Scan     		PDF G014b3k CA3118, CA3146, CA3183 CA3118AT, CA3146AE, CA3183AE, WF VQE 22 c CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE

    Untitled

    Abstract: No abstract text available
    Text: BUZ 31L Infineo n t « c h n o l o 9 ¡ «s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Typ« ^DS h> flDS<on Package Ordering Code BUZ 31 L 200 V 13.5 A 0.2 n TO-220AB C67078-S1322-A2 Maximum Ratings Symbol


    OCR Scan     		PDF O-220AB C67078-S1322-A2 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    ce 2826 ic

    Abstract: transistor mje 2050 transistor 1005 oj motorola 2676 10E18
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast


    OCR Scan     		PDF MDC5001T1 MDC5000 ce 2826 ic transistor mje 2050 transistor 1005 oj motorola 2676 10E18

    TC1628

    Abstract: No abstract text available
    Text: felCom Semiconductor, Inc. TC18C46 TC28C46 TC38C46 CMOS CURRENT MODE PWM CONTROLLER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The T C 38C 46 is a current m ode C M O S PW M control IC. It d raw s only 2 m A supply current, so it can be driven


    OCR Scan     		PDF TC18C46 TC28C46 TC38C46 500mA 50nsec 1000pF 500kHz 350mV TC1628

    Untitled

    Abstract: No abstract text available
    Text: •elwom Semiconductor, Inc. T nftPdfi 1 TC28C46 TC38C46 CMOS CURRENT MODE PWM CONTROLLER FEATURES GENERAL DESCRIPTION ■ Isolated Output Drive ■ Low Power CMOS Construction ■ Low Supply Current.2mA Typ. ■ Wide Supply Voltage Operation. 8V to 18V


    OCR Scan     		PDF TC28C46 TC38C46 500mA 50nsec 1000pF 500kHz 350mV

    7 amps pnp transistor

    Abstract: 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module
    Text: E C I SEMICONDUCTOR MAE D • 305fl7b7 0 0 0 0 D7 4 Oôb « E C I S -jy DESCRIPTION The ECI Semiconductor EM series has been generated to provide cost and space effective high performance analog system solutions in silicon for your specific application. The EM family of low-cost 30v Bipolar Gridded Semicustom Arrays is


    OCR Scan     		PDF 302A7L7 0D00074 302fl7b7 7 amps pnp transistor 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module

    NPN Transistor PT7

    Abstract: ITT K12 series switch T flip flop IC UTM RESISTOR 214 24 volt 6 amp power supply chips kaa x5 amd k10 Toggle flip flop IC P144 resistor 10 kohm
    Text: MAE D C I SEMICONDUCTOR • 3 0 H 0 7b 7 00000=15 Û00 W E C I S DESIGN SUPPORT The senior designers at ECI are within easy reach to support you and your program. . To begin the process just deliver your schematic and input-output -requirements to ECI. We will design a chip to


    OCR Scan     		PDF 0G00113 T-42-1? NPN Transistor PT7 ITT K12 series switch T flip flop IC UTM RESISTOR 214 24 volt 6 amp power supply chips kaa x5 amd k10 Toggle flip flop IC P144 resistor 10 kohm