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    Samsung Semiconductor K4B4G1646D-BCK0

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    Samsung Electronics Co. Ltd K4B4G1646D-BCK0

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    Component Electronics, Inc K4B4G1646D-BCK0 43
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    Win Source Electronics K4B4G1646D-BCK0 10,000
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    Samsung Semiconductor K4B4G1646D-BCMA

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    Samsung Electronics Co. Ltd K4B4G1646DBCK0

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    Samsung Electronics Co. Ltd K4B4G0846D-BCH9TCV

    DRAMs Parts and Modules (Alt: K4B4G0846D-BCH9TCV)
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    EBV Elektronik K4B4G0846D-BCH9TCV 13 Weeks 2,000
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    46DBC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM4450-25F -46dBc FLM4450-25F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1414-8F -46dBc FLM1414-8F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7179-18F -46dBc FLM7179-18F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM3742-25F -46dBc FLM3742-25F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM4450-12F -46dBc FLM4450-12F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5359-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM5359-4F -46dBc FLM5359-4F 25hods PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5359-12F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM5359-12F -46dBc FLM5359-12F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM3742-12F -46dBc FLM3742-12F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM4450-8F -46dBc FLM4450-8F 25hods PDF

    14.5ghz

    Abstract: FLM1414-3F
    Text: FLM1414-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 35dBm Typ. High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM1414-3F 35dBm -46dBc FLM1414-3F 14.5ghz PDF

    FLM3742-18F

    Abstract: 4532 fet
    Text: FLM3742-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM3742-18F -46dBc FLM3742-18F 4532 fet PDF

    FLM3439-8F

    Abstract: No abstract text available
    Text: FLM3439-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM3439-8F -46dBc FLM3439-8F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM7785-6F -46dBc FLM7785-6F Voltage88 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-12F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 41.5dBm Typ. • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 39% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		FLM4450-12F -46dBc 50ohm FLM4450-12F 25deg PDF

    FLM5359-25F

    Abstract: No abstract text available
    Text: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM5359-25F -46dBc FLM5359-25F Pow4888 PDF

    FLM5359-18F

    Abstract: No abstract text available
    Text: FLM5359-18F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM5359-18F -46dBc FLM5359-18F Pow4888 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM0910-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		FLM0910-8F -46dBc FLM0910-8F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm Typ. • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 29% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 10.7 to 11.7GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		FLM1011-4F -46dBc 50ohm FLM1011-4F 25deg PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3439-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm Typ. • High Gain: G1dB = 12.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 3.4 to 3.9GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		FLM3439-4F -46dBc 50ohm FLM3439-4F 25deg 25atched PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 38% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 6.4 to 7.2GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		FLM6472-25F -46dBc 50ohm FLM6472-25F 25deg 25deatched PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-4F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b =10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-4F -46dBc 5964-4F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-12F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 41 -506171 Typ. • High Gain: G ^ b = 10.0dB (Typ.) • High PAE: riadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM5964-12F -46dBc FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1414-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 6.0dB (Typ.) • High PAE: r iadd = 26% (Typ.) • Low IM3 = -46dBc@Po = 26.5dBm (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		FLM1414-6F -46dBc 25llowing FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM4450-25F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm


    OCR Scan     		FLM4450-25F -46dBc FLM4450-25F FCSI0499M200 PDF