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    463A Search Results

    463A Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ463A-T1-AT Renesas Electronics Corporation Power MOSFETs for Automotive, SSP, / Visit Renesas Electronics Corporation
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    463A Price and Stock

    PanJit Group PJQ4463AP_R2_00001

    60V P-CHANNEL ENHANCEMENT MODE M
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    DigiKey PJQ4463AP_R2_00001 Cut Tape 4,955 1
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    Ozdisan Elektronik PJQ4463AP_R2_00001
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    onsemi ADT7463ARQZ-REEL

    IC REMOTE THERMAL CTRLR 24-QSOP
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    DigiKey ADT7463ARQZ-REEL Cut Tape 2,287 1
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    ADT7463ARQZ-REEL Digi-Reel 2,287 1
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    Avnet Americas ADT7463ARQZ-REEL Reel 5,000 13 Weeks 2,500
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    Avnet Asia ADT7463ARQZ-REEL 13 Weeks 2,500
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    Avnet Silica ADT7463ARQZ-REEL 14 Weeks 2,500
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    Chip1Stop ADT7463ARQZ-REEL 6,373
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    EBV Elektronik ADT7463ARQZ-REEL 15 Weeks 2,500
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    PanJit Group PJQ2463A_R1_00001

    60V P-CHANNEL ENHANCEMENT MODE M
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    DigiKey PJQ2463A_R1_00001 Cut Tape 1,490 1
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    PJQ2463A_R1_00001 Digi-Reel 1,490 1
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    Nearson Antennas S463AM-915

    RF ANT 915MHZ WHIP STR SMA MALE
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    DigiKey S463AM-915 Bulk 555 1
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    Nearson Antennas S463AM-868

    RF ANT 868MHZ WHIP STR SMA MALE
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    DigiKey S463AM-868 Bulk 354 1
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    463A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F 6 DATE 28 APR 2005 1 SCALE 4:1 D −X− 6 5 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD


    Original     		PDF OT-563, 63A-01

    Untitled

    Abstract: No abstract text available
    Text: Luckylight 6.22mmx3.68mm Rectangular Type Amber LED Technical Data Sheet Part No.: LL-463ADS Spec No.: 463 Rev No: V.3 Date: Nov./28/2006 Approved: ZHOU Checked: Wu Drawn: Shu Lucky Light Electronics Co., Ltd. Page: 1 OF 7 http://www.luckylight.cn Luckylight


    Original     		PDF LL-463ADS

    sot-36

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT–563, 6 LEAD CASE 463A–01 ISSUE O SCALE 4:1 A –X– 5 6 1 2 K 4 B –Y– 3 D EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 STYLE 2: PIN 1. 2. 3. 4. 5. 6. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI


    Original     		PDF

    463a

    Abstract: No abstract text available
    Text: Filename: tfs 463a.doc Version 1.4 VI TELEFILTER 01.03.2005 Filter specification TFS 463A 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 23 °C dBm 228 Ω | -1.25 pF 228 Ω | -1.25 pF Characteristics


    Original     		PDF

    SZNUP4114HMR6T1G

    Abstract: MARKING D7 SOT363 MARKING d5 SOT363 marking X2 NUP4114HMR6T1G marking code p4 TSOP6 marking D3 TSOP-6
    Text: NUP4114 Series, SZNUP4114HMR6T1G Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage http://onsemi.com The NUP4114 transient voltage suppressors are designed to protect high speed data lines from ESD. Ultra−low capacitance and high level


    Original     		PDF NUP4114 SZNUP4114HMR6T1G SC-88 IEC61000-4-2 AEC-Q101 NUP4114/D MARKING D7 SOT363 MARKING d5 SOT363 marking X2 NUP4114HMR6T1G marking code p4 TSOP6 marking D3 TSOP-6

    SBAS16DXV6T1G

    Abstract: No abstract text available
    Text: BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G Dual Switching Diode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements Pb−Free Packages are Available


    Original     		PDF BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G AEC-Q101 OT-563 BAS16DXV6/D

    Untitled

    Abstract: No abstract text available
    Text: MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 DTC114EP/D

    NSBC113EPDXV6T1

    Abstract: No abstract text available
    Text: MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5330DW1, NSBC113EPDXV6 DTC113EP/D NSBC113EPDXV6T1

    BAV70DXV6T1

    Abstract: BAV70DXV6T5
    Text: BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode • Lead-Free Solder Plating http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc


    Original     		PDF BAV70DXV6T1, BAV70DXV6T5 BAV70DXV6T1 BAV70DXV6T1/D BAV70DXV6T1 BAV70DXV6T5

    BC847

    Abstract: BC847CDXV6T1 BC847CDXV6T1G BC847CDXV6T5G BC848 BC848CDXV6T1 BC848CDXV6T1G
    Text: BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications.


    Original     		PDF BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G OT-563 BC847CDXV6T1 BC847 BC848 BC847CDXV6T1/D BC847 BC847CDXV6T1 BC847CDXV6T1G BC847CDXV6T5G BC848 BC848CDXV6T1 BC848CDXV6T1G

    Untitled

    Abstract: No abstract text available
    Text: EMD4DXV6T1, EMD4DXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF OT-563

    earth leakage circuit

    Abstract: 15.927 Breaker FI 15.932 15.930
    Text: FI EARTH LEAKAGE CIRCUIT BREAKERS FI compact Earth Leakage Circuit Breakers detect and interrupt earth ground faults. They are VDE approved for the European system of protecting people, animals, equipment and property from dangerous line-to-ground and shock


    Original     		PDF 300mA earth leakage circuit 15.927 Breaker FI 15.932 15.930

    Untitled

    Abstract: No abstract text available
    Text: MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN5316DW1, NSBC143TPDXV6 DTC143TP/D

    Untitled

    Abstract: No abstract text available
    Text: NTZD3158P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTZD3158P NTZD3158P/D

    NTZD3152PT1G

    Abstract: NTZD3152P NTZD3152PT5G
    Text: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices


    Original     		PDF NTZD3152P OT-563 NTZD3152P/D NTZD3152PT1G NTZD3152P NTZD3152PT5G

    Untitled

    Abstract: No abstract text available
    Text: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices


    Original     		PDF NTZD5110N NTZD5110N/D

    resistor

    Abstract: PEMD4 PEMD13 Cross Reference resistor cross reference EMA8 PEMB10 PEMD6 NL17SZ02XV5T2 NL17SZ07XV5T2
    Text: SOT5xx Cross Reference LOGIC MiniG LCX OVT Logic MiniGates ON ~ ~ ~ ~ NL17SZ00XV5T2 2 Input NAND 463B TC7SZ00AFE ~ ~ ~ ~ NL17SZ02XV5T2 2 Input NOR 463B TC7SZ02AFE ~ ~ ~ ~ NL17SZ04XV5T2 Single Inverter 463B TC7SZ04AFE ~ ~ ~ ~ NL17SZU04XV5T2 Unbuffered Inverter


    Original     		PDF NL17SZ00XV5T2 TC7SZ00AFE NL17SZ02XV5T2 TC7SZ02AFE NL17SZ04XV5T2 TC7SZ04AFE NL17SZU04XV5T2 TC7SZU04AFE NL17SZ06XV5T2 NL17SZ07XV5T2 resistor PEMD4 PEMD13 Cross Reference resistor cross reference EMA8 PEMB10 PEMD6 NL17SZ02XV5T2 NL17SZ07XV5T2

    Untitled

    Abstract: No abstract text available
    Text: RP - Series RCCB Earth Leakage Circuit Breakers RCCb Series compact Earth Leakage Circuit Breakers detect and interrupt earth ground faults. They are VDE approved for the European system of protecting people, animals, equipment and proper ty from dangerous


    Original     		PDF RP2101 300mA RP2203 RP2230 500mA RP4203 RP4230 RP4250

    NSBA113EDXV6T1

    Abstract: NSBA114EDXV6T1 NSBA114EDXV6T5 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1
    Text: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBA114EDXV6T1, NSBA114EDXV6T5 NSBA114EDXV6T1 OT-563 NSBA114EDXV6/D NSBA113EDXV6T1 NSBA114EDXV6T1 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1

    NUF2230XV6

    Abstract: NUF2230XV6T1 NUF2230XV6T1G
    Text: NUF2230XV6 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all


    Original     		PDF NUF2230XV6 IEC61000-4-2 OT-563 NUF2230XV6/D NUF2230XV6 NUF2230XV6T1 NUF2230XV6T1G

    SL64G4B4M2E-A60

    Abstract: No abstract text available
    Text: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech


    Original     		PDF 144-PIN SL64G4B4M2E-A60 104ns SL64G4B4M2E-A60 24-pin 300-mil DQ20-23 A0-A10

    Untitled

    Abstract: No abstract text available
    Text: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need


    Original     		PDF NST30010MXV6T1G, NSVT30010MXV6T1G OT563 NST30010MXV6/D

    Untitled

    Abstract: No abstract text available
    Text: NSR0320XV6T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features http://onsemi.com • Low Forward Voltage − 0.35 V Typ @ IF = 10 mAdc • High Current Capability


    Original     		PDF NSR0320XV6T1 NSR0320XV6T1/D

    bc 147 transistor

    Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
    Text: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits


    OCR Scan     		PDF 0Q0D014 O-106 O-237 bc 147 transistor transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b