ZXMN0545G4TA
Abstract: ZXMN0545G4 ZXMN0545G4TC
Text: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMN0545G4
140mA
OT223
OT223
ZXMN0545G4TA
ZXMN0545G4
ZXMN0545G4TC
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Untitled
Abstract: No abstract text available
Text: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMN0545G4
140mA
OT223
OT223
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TBA 611
Abstract: No abstract text available
Text: ZXMN0545G4 ADVANCE INFORMATION 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMN0545G4
140mA
OT223
OT223
ZXMN0545G4TA
TBA 611
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Q1NC45
Abstract: Q1NC45R D2NC45 JESD97 STD2NC45-1 STQ1NC45R-AP
Text: STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD2NC45-1 450V <4.5Ω 1.5A 30W STQ1NC45R-AP 450V <4.5Ω 0.5A 3.1W • 3 Extremely high dv/dt capability ■ 100% avalanche tested
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STD2NC45-1
STQ1NC45R-AP
Q1NC45
Q1NC45R
D2NC45
JESD97
STD2NC45-1
STQ1NC45R-AP
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Untitled
Abstract: No abstract text available
Text: STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD2NC45-1 450V <4.5Ω 1.5A 30W STQ1NC45R-AP 450V <4.5Ω 0.5A 3.1W • 3 Extremely high dv/dt capability ■ 100% avalanche tested
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STD2NC45-1
STQ1NC45R-AP
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RFM10N50
Abstract: AN7254 AN7260 RFM10N45 TA17435
Text: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,
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RFM10
O204AA)
RFM10N45,
RFM10N50
AN7254
AN7260.
RFM10N50
AN7260
RFM10N45
TA17435
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TA17425
Abstract: AN7254 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor
Text: [ /Title RFM6 N45, RFP6N4 5, RFP6N5 0 /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm,
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O204AA,
O220AB)
RFM6N45,
RFP6N45,
RFP6N50
AN7254
AN7260
TA17425
AN7260
RFM6N45
RFP6N45
RFP6N50
TB334
20KW motor
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pj 996 diode
Abstract: HV9106 48V DC to 12v dc 40 amp converter circuit diagram smps circuit diagram HV9106P 48V DC to 12v dc converter circuit diagram 40 amp amplifier diagram n mosfet depletion 600V A510K HV9106PJ
Text: HV9106/HV9109 HV9106 HV9109 Preliminary High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch +VIN Package Outlines BVDSS RDS ON Min Max Feedback Voltage 600V 20Ω 12V 450V ±1% 49% HV9106P HV9106PJ 600V 20Ω 12V 450V ±1% 99%
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HV9106/HV9109
HV9106
HV9109
HV9106P
HV9106PJ
HV9109P
HV9109PJ
HV9106/09
HV9106/09
pj 996 diode
HV9106
48V DC to 12v dc 40 amp converter circuit diagram
smps circuit diagram
HV9106P
48V DC to 12v dc converter circuit diagram 40 amp
amplifier diagram
n mosfet depletion 600V
A510K
HV9106PJ
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mosfet 1000A
Abstract: Preconditioning MOSFET
Text: DMOS Application Note AN–D1 DMOS FET Electrical Performance .6V VGS = 6V VGS = 4V VGS = 2V VGS = 0V .6V 450V 450V 1.5 1.35 VGS th (normalized) The electrical behavior of MOSFETs has been explained by numerous authors. A different, and nontraditional way of viewing
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IRF420
Abstract: IRF422 TB334 IRF421 IRF423
Text: IRF420, IRF421, IRF422, IRF423 Semiconductor 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF420,
IRF421,
IRF422,
IRF423
IRF420
IRF422
TB334
IRF421
IRF423
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RFH10N50
Abstract: RFH10N45 TA17435 TB334
Text: RFH10N45, RFH10N50 Semiconductor Data Sheet 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs October 1998 File Number 1629.2 Features • 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.600Ω (RFH10 power field effect transistors designed for applications such
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RFH10N45,
RFH10N50
RFH10
TB334
RFH10N
TA17435.
AN7254
AN7260.
RFH10N50
RFH10N45
TA17435
TB334
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Untitled
Abstract: No abstract text available
Text: RFH10N45, RFH10N50 Semiconductor October 1998 Data Sheet File Number 1629.2 Features 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs • 10A, 450V and 500V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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RFH10N45,
RFH10N50
TB334
TA17435.
AN7254
AN7260.
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LM 4585
Abstract: sml451r1gn
Text: SEP1ELAB PLC 0133107 t>OE D000Ô3Ô INI 525 •SMLB ä MOS POWER -13 SML5085GN SML4585GN SEME LAB 500V 450V 500V 450V SML501R1GN SML451R1GN 0.8512 7.0A 7.0A 0.85Q 1.1 on 1.1 on 6.5A 6.5A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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SML5085GN
SML4585GN
SML501R1GN
SML451R1GN
5085GN
451R1GN
501R1GN
4585GN
O-257AA
LM 4585
sml451r1gn
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irf430
Abstract: No abstract text available
Text: IRF430, IRF431, IRF432, IRF433 IHARRI5 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 4.0A and 4.5A, 450V and 500V, These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF430,
IRF431,
IRF432,
IRF433
TA17415.
RF432,
irf430
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501R1BN
Abstract: sml451r1bn
Text: SEMELAB PLC bGE D 6133107 D000b3b WO ISflLB 4 MOS POWER = 1 1 = " T SML5085BN SML4585BN SML501R1BN SML451R1BN SEM E LAB 500V 450V 500V 450V y \ - \ s 9.5A 9.5A 9.0A 9.0A 0.85Q 0.Q5Q. 1.10Q 1.1 OQ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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D000b3b
SML5085BN
SML4585BN
SML501R1BN
SML451R1BN
4585BN
5085BN
451R1BN
501R1BN
O-247AD
sml451r1bn
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5040bn
Abstract: sml4540bn SML5040BN
Text: _ bDE SEHELAB PLC Ô1331Û7 » GGD0b32 E45 « S I I L B INI MOS POWER 4 SML5040BN SML4540BN SML5050BN SML4550BN SEME LAB 500V 450V 500V 450V 16.0A 16.0A 14.0A 14.0A 0.40Q 0.40Q 0.50Q 0.5012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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GGD0b32
SML5040BN
SML4540BN
SML5050BN
SML4550BN
5040BN
4550BN
4540BN
O-247AD
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Untitled
Abstract: No abstract text available
Text: if* ? S IRF430, IRF431, IRF432, IRF433 Semiconductor y y 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V, • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF430,
IRF431,
IRF432,
IRF433
TB334
RF432,
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5085CN
Abstract: sml451r1cn SML5085CN
Text: SEMELAB PLC hOE D Ô1331Ô7 OOGDfllD mib « S M L B — MOS POWER 4 iFFi SEME SML5085CN SML4585CN SML501R1CN SML451R1CN LAB 500V 450V 500V 450V 8.0A 0.85Q 8.0A 0.8512 7.0A 1.10Q 7.0A 1.1 OQ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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PDF
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SML5085CN
SML4585CN
SML501R1CN
SML451R1CN
4585CN
5085CN
451R1CN
501R1CN
SML5085/501R1CN
O-254AA
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sml4540an
Abstract: sml4550an 15tr package unit
Text: SEMELAB PLC bOE D 0133167 DD0G7Sf l 432 IS MLB MOS POWER = INI 4 r r = " T v S * - 15 SEME SML5040AN SML4540AN SML5050AN SML4550AN LAB 500V 450V 500V 450V 14.5A 14.5A 13.0A 13.0A 0.40Q 0.40Q 0.500 0.500 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML5040AN
SML4540AN
SML5050AN
SML4550AN
4540AN
4550AN
5040AN
DD007L1
SML504
sml4550an
15tr package unit
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sml5040cn
Abstract: SML5040 sml4540cn sml4550cn
Text: SEMELAB PLC bO E Ö1331Ö7 ODGOflOb TIS • SMLB D INI 4 MOS POWER iF F i INI SEME ''P 3 A - I3 SML5040CN SML4540CN SML5050CN SML4550CN LAB 500V 450V 500V 450V 13.0A 13.0A 11.5A 11.5A 0.40ft 0.40ft 0.50ft 0.50ft N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML5040CN
SML4540CN
SML5050CN
SML4550CN
4540CN
5040CN
4550CN
5050CN
O-254AA
SML5040
sml4550cn
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Untitled
Abstract: No abstract text available
Text: IRF830, IRF831, IRF832, IRF833 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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PDF
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IRF830,
IRF831,
IRF832,
IRF833
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4525 GE
Abstract: sml4525hn 5025HN
Text: SEHELAB PLC bOE ]> • 0133107 DDDDflSfl 313 H S flL B MOS POWER ËFFË 4 'T - V t - 1 5 INI SML5025HN SML4525HN SML5030HN SML4530HN SEME LAB 500V 450V 500V 450V 21.0A 21.0 A 19.0A 19.0A 0.25ft 0.2512 0.30ft 0.30ft N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML5025HN
SML4525HN
SML5030HN
SML4530HN
4525HN
5025HN
4530HN
5030HN
O-258AA
4525 GE
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Untitled
Abstract: No abstract text available
Text: HV9120 HV9123 High-Voltage Current-Mode PWM Controller Ordering Information +VIN Max Duty Cycle Package Options 16 Pin 20 Pin SOIC Plastic PLCC Min Max Feedback Accuracy 10V 450V <+2% 49% HV9120C HV9120P HV9120NG HV9120PJ HV9120X 10V 450V <+2% 99% HV9123C
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HV9120
HV9123
HV9120C
HV9123C
HV9120P
HV9123P
HV9120NG
HV9123NG
HV9120PJ
HV9123PJ
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Untitled
Abstract: No abstract text available
Text: HV9106 HV9109 Supertex inc. P re lim in a r y High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch +v,N Min Max 16 Pin Plastic DIP 20 Pin Plastic PLCC 600V 20Ì2 12V 450V ±1% 49% HV9106P HV9106PJ 600V 2012 12V 450V ±1% 99% HV9109P
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HV9106
HV9109
HV9106P
HV9106PJ
HV9109P
HV9109PJ
HV9106
HV9109
HV9106/HV9109
20-pin
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