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    4500 IGBT Search Results

    4500 IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    4500 IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    snubber FOR 3PHASE BRIDGE RECTIFIER

    Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
    Text: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.


    Original     		PDF D170S D170U snubber FOR 3PHASE BRIDGE RECTIFIER EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 eupec phase control thyristor

    DISC THYRISTOR

    Abstract: D170U D1201 D170S single phase bridge rectifier pin configuration "921" Thyristor diode gto EUPEC Thyristor V4500 4500 igbt
    Text: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.


    Original     		PDF D170S D170U DISC THYRISTOR D170U D1201 single phase bridge rectifier pin configuration "921" Thyristor diode gto EUPEC Thyristor V4500 4500 igbt

    GT 1081

    Abstract: MAS 10 RCD IGBT GT 1081 igbt 3 KA transistor GT 1081 T1791 rcd 103 35d56 DS30 GS11
    Text: Click on outline no. IGBT and GCT - Freewheeling Diodes Type V DRM V D 1031 SH D 1331 SH D 1641 SX D 1181 SX D 1441 SX D 931 SH D 1131 SH *) 4500 4500 4500 6000 6000 6500 6500 estimate failure rate λ ~ 100 fit V(D)D *) I(FSM) ∫i2dt V(F)/I(FM) kV kA A²s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage XPTTM IGBT IXYX40N450HV VCES = 4500V IC110 = 40A VCE sat  3.9V TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M 4500 V VGES Continuous


    Original     		PDF IXYX40N450HV IC110 O-247PLUS-HV 40N450

    Untitled

    Abstract: No abstract text available
    Text: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   85 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous


    Original     		PDF IXTT1N450HV O-268HV 100ms 1N450 2-13-A

    Untitled

    Abstract: No abstract text available
    Text: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   80 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous


    Original     		PDF IXTT1N450HV O-268HV 100ms 1N450 H7-P640

    Untitled

    Abstract: No abstract text available
    Text: QIS4506001 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Single Discrete IGBT 60 Amperes /4500 Volts Description: Powerex Single Non-Isolated Discrete is designed specially for customer high voltage applications Outline Drawing Schematic Features:


    Original     		PDF QIS4506001

    QIS4506001

    Abstract: No abstract text available
    Text: QIS4506001 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Single Discrete IGBT 60 Amperes /4500 Volts Description: Powerex Single Non-Isolated Discrete is designed specially for customer high voltage applications Outline Drawing


    Original     		PDF QIS4506001 QIS4506001

    QIS4506002

    Abstract: igbt 60 Discrete IGBT ic 67a
    Text: QIS4506002 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com HV Single Discrete IGBT 60 Amperes / 4500 Volts Description: Powerex Single Non-Isolated Discrete IGBT designed specially for customer high voltage applications. Outline


    Original     		PDF QIS4506002 QIS4506002 igbt 60 Discrete IGBT ic 67a

    4500 igbt

    Abstract: QIS4506001 ic 67a Discrete IGBT
    Text: QIS4506001 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Single Discrete IGBT 60 Amperes /4500 Volts Description: Powerex Single Non-Isolated Discrete is designed specially for customer high voltage switching and pulse power applications.


    Original     		PDF QIS4506001 4500 igbt QIS4506001 ic 67a Discrete IGBT

    QIS4506002

    Abstract: Discrete IGBT 4500 igbt
    Text: QIS4506002 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com HV Single Discrete IGBT 60 Amperes / 4500 Volts Description: Powerex Single Non-Isolated Discrete IGBT designed specially for customer high voltage switching and pulse


    Original     		PDF QIS4506002 QIS4506002 Discrete IGBT 4500 igbt

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-90H ● IC . 600 A ● VCES . 4500 V


    Original     		PDF CM600HG-90H 200A/Â

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HG-90H ● IC . 900 A ● VCES . 4500 V


    Original     		PDF CM900HG-90H 300A/Â

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM900HC-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HC-90H ● IC . 900 A ● VCES . 4500 V


    Original     		PDF CM900HC-90H 300A/Â

    Untitled

    Abstract: No abstract text available
    Text: QIS4506002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 HV Single Discrete IGBT 60 Amperes / 4500 Volts Description: Powerex Single Non-Isolated Discrete IGBT designed specially for customer high voltage applications. Features: „ „ „ „


    Original     		PDF QIS4506002

    cm900hc-90h

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM900HC-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HC-90H ● IC . 900 A ● VCES . 4500 V


    Original     		PDF CM900HC-90H cm900hc-90h

    CM900HG-90H

    Abstract: cm900hg hvigbt diode HVIGBT from Mitsubishi electric
    Text: MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HG-90H ● IC . 900 A ● VCES . 4500 V


    Original     		PDF CM900HG-90H CM900HG-90H cm900hg hvigbt diode HVIGBT from Mitsubishi electric

    CM600HG

    Abstract: CM600HG-90H BIPOLAR TRANSISTOR HVIGBT from Mitsubishi electric CM600HG-90
    Text: MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-90H ● IC . 600 A ● VCES . 4500 V


    Original     		PDF CM600HG-90H CM600HG CM600HG-90H BIPOLAR TRANSISTOR HVIGBT from Mitsubishi electric CM600HG-90

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 VCES = 4500V IC110 = 32A VCE sat  3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M


    Original     		PDF IXYF40N450 IC110 40N450

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage XPTTM IGBT IXYF30N450 VCES = 4500V IC110 = 17A VCE sat  3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M


    Original     		PDF IXYF30N450 IC110 30N450 H7-645)

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-02 Aug 04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4506 5SYA1624-02 specifications4506 CH-5600

    1200G450350

    Abstract: 5SNA1200G450350
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200G450350 CH-5600 1200G450350 5SNA1200G450350

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage XPTTM IGBT IXYT30N450HV IXYH30N450HV VCES = 4500V IC110 = 30A VCE sat  3.9V TO-268HV (IXYT) G E Symbol Test Conditions C (Tab) Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M


    Original     		PDF IXYT30N450HV IXYH30N450HV IC110 O-268HV 30N450 H7-645) 0-14-A

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original     		PDF 12N4506 5SYA1624-03 CH-5600