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    45 M 20 A Search Results

    45 M 20 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DA9213-XXFSC Renesas Electronics Corporation Multiphase 20A Output Current Visit Renesas Electronics Corporation
    DA9213-XXFS1 Renesas Electronics Corporation Multiphase 20A Output Current Visit Renesas Electronics Corporation
    DA9213-XXFS1-A Renesas Electronics Corporation Multiphase 20A Output Current Visit Renesas Electronics Corporation
    DA9213-XXFSC-A Renesas Electronics Corporation Multiphase 20A Output Current Visit Renesas Electronics Corporation
    DA9213-XXFSC-AT Renesas Electronics Corporation Multiphase 20A Output Current Visit Renesas Electronics Corporation
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    45 M 20 A Price and Stock

    ECS International Inc ECS-TXO-20CSMV4-520-AN-TR

    TCXO Oscillators 52.000 MHz ECS-TXO-20CSMV MultiVolt TCXO Clipped Sine Wave 1.7 - 3.6 +/-0.5 ppm -40 - +85C 2.0 x 1.6 mm 4 Pad SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ECS-TXO-20CSMV4-520-AN-TR 2,478
    • 1 $1.65
    • 10 $1.3
    • 100 $1.25
    • 1000 $1.08
    • 10000 $0.952
    Buy Now

    Bourns Inc SRR0745HA-220M

    Power Inductors - SMD Ind,7.3x7.3x4.5,22uH+/-20%,1.65A,shd
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SRR0745HA-220M 1,978
    • 1 $1.5
    • 10 $0.977
    • 100 $0.818
    • 1000 $0.738
    • 10000 $0.612
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    Global Connector Technology MEM2090-00-145-00-A

    Memory Card Connectors Micro SD Push-Push, Normaly Open, SMT, 1.45mm Profile, No Peg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MEM2090-00-145-00-A 1,966
    • 1 $1.56
    • 10 $1.36
    • 100 $1.21
    • 1000 $0.864
    • 10000 $0.748
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    ECS International Inc ECS-TXO-20CSMV4-500-AN-TR

    TCXO Oscillators 50.000 MHz ECS-TXO-20CSMV MultiVolt TCXO Clipped Sine Wave 1.7 - 3.6 +/-0.5 ppm -40 - +85C 2.0 x 1.6 mm 4 Pad SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ECS-TXO-20CSMV4-500-AN-TR 1,943
    • 1 $1.65
    • 10 $1.3
    • 100 $1.25
    • 1000 $0.973
    • 10000 $0.956
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    Infineon Technologies AG AIMW120R045M1XKSA1

    SiC MOSFETs SIC_DISCRETE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AIMW120R045M1XKSA1 1,421
    • 1 $21.04
    • 10 $20.72
    • 100 $14.58
    • 1000 $14.37
    • 10000 $14.37
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    45 M 20 A Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    45 M 20 A Corning Frequency Control Electromechanical Filter 45 MHz BPF Original PDF
    45M20A Fox Electronics Electromechanical Filter 45 MHz BPF, 2 dB IL, 1 dB Inband ripple Original PDF
    45M20A HEC Electromechanical Filter 45 MHz BPF, 2 dB IL, 0.5 dB Inband ripple Original PDF
    45M20A Hy-Q International Electromechanical Filter 45 MHz BPF, 2 dB IL, 1 dB Inband ripple Original PDF
    45M20A Raltron Electronics Electromechanical Filter 45 MHz BPF, 2 dB IL, 1 dBm Inband ripple Original PDF
    45M20AF Raltron Electronics Electromechanical Filter 45 MHz BPF, 2 dB IL, 1 dBm Inband ripple Original PDF
    45M20ALF Fox Electronics Electromechanical Filter 45 MHz BPF: 2 dB IL: 1 dB Inband ripple Original PDF

    45 M 20 A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd NE

    Abstract: STK10C68 STK10C68-M 93056
    Text: STK10C68-M STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 FEATURES DESCRIPTION • 35, 45 and 55ns Access Times • 20 and 25ns Output Enable Access The Simtek STK10C68-M is a fast static RAM 35, 45 and 55ns , with a nonvolatile electrically-erasable PROM


    Original
    STK10C68-M MIL-STD-833/SMD STK10C68-M STK10C68 300-mil smd NE 93056 PDF

    TPV695A

    Abstract: No abstract text available
    Text: TPV695A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV695A is a high gain PACKAGE STYLE .250 BAL FLG push-pull device Designed for high power, band IV & V Transposers and transmitter amplifiers Applications. A B .0 20 x 45 ° Ø .13 0 N O M . .0 50 x 45 °


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    TPV695A TPV695A PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡n tg l M5164/M5164L HIGH-SPEED 8,192 x 8 BIT CMOS STATIC RAM Standard M ilitary Drawings # 5962-89691 & # 5962-85525 -25 -35 -45 -70 Max. Access Time ns 25 35 45 70 Max. D.C. Supply Current (mA) 110 100 100 100 Max. Standby Current (mA) 20 20 20 20 High-Speed Address/Chip Select


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    M5164/M5164L M5164 M5164L PDF

    8C317

    Abstract: BC3098 bc2388 BC306 8C239 bc238 BC259C TO92
    Text: DEVICE TYPE PA C K A G E B V C fO BVCBO B VE80 CBO # VCB IVI M M VI MIN BC237 BC237A BC237B BC238 BC238A N P N T O -92 N P N T O -92 N PN TO -92 N PN T O -9 2 N P N T O -92 (77 (77) (77) (77) (77) 45 45 45 20 20 50 50 50 30 30 BC2388 BC238C 8C239 BC239B


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    BC237 BC237A BC237B BC238 BC238A BC2388 BC238C 8C239 BC239B BC239C 8C317 BC3098 BC306 BC259C TO92 PDF

    MB7132E

    Abstract: CY7C282-45 IM5618 mb7132 DM74S188A DM87S229 HM7680-5 HM7680P-5 HM7681-5 MB7132H
    Text: - 32 - 6 3 8 0 X 4 •/ f- > ?m%3Cl2l æ ít % £ cc> TAAC max ns TCAC max (ns) 45 25 45 25 TOH max (ns) 7" ft tt TOE max (ns) CY7C282-45 CYPRESS CY7C282-45 CYPRESS DM74S188A NS 0 —'70 25 20 DM74S288A NS 0-70 25 20 DM87LS181 NS 0— 70 100 DM87S181A NS


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    CY7C282-45 DM74S188A DM74S2884 DM871N82S181B TBP28S86 TBP28SA86A UPB428C/D UPB428C/D-1 024X8) MB7132E IM5618 mb7132 DM87S229 HM7680-5 HM7680P-5 HM7681-5 MB7132H PDF

    Stanford Telecom

    Abstract: Stanford Telecom package Z0200045FSC
    Text: < £ Z ¡ L O P r e lim in a r y C u st o m er P r o c u r e m e n t S pecificat io n E Z87200 20/45 MHZ SPREAD-SPECTRUM DIRECT SEQUENCE PROCESSOR FEATURES Part PN Rate* Data Rate* Mchips (Mbps) Z87200 +11 2.048 Speed (MHz) 20/45 • Power Management Features


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    Z87200 Z87200 100-Pin Stanford Telecom Stanford Telecom package Z0200045FSC PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is SRAM MODULE STATIC RAM 256K X 32 O M BIT Max. Type name Access Load memory time Outward dimensions Data sheet W x H x D (mm) page (ns) MH25632N-25 25 MH25632N-35 35 MH25632N-45 45 MH25632NZ-25 25 MH25632NZ-35 35 MH25632NZ-45 45 97.79 X 20 X 8.6


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    MH25632N-25 MH25632N-35 MH25632N-45 MH25632NZ-25 MH25632NZ-35 MH25632NZ-45 M5M51004J 8388608-BIT PDF

    Untitled

    Abstract: No abstract text available
    Text: m^iii HM 65790 DATA SHEET 16 K x 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES . . . FAST ACCESS TIME COMMERCIAL : 15/20/25/35/45 ns max MILITARY : 20/25/35/45 ns (max) LOW POWER CONSUMPTION ACTIVE : 267 mW (typ) STANDBY: 7 5 mW(typ) WIDE TEMPERATURE RANGE:


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    65790/Rev PDF

    HP 4503

    Abstract: HP 4502 hp 4562 A 4503 ic PC917 ic hp 4503 ci 4503 4503 4562 HCPL-0501
    Text: — ft 1 ik jc HI VcE If m ax m A V* m ax (V ) P di max (m W ) H C P L - 4 5 0 2 , 4503 HP 25 5 45 20 H C P I . 0500 HP 25 5 45 20 " » » « m # tt « 1 IOL Ta pD2 (m A ' <mW ) (k V ) DC AC* \ m ax ( °C i 8 100 2 .5 * -5 5 -1 0 0 8 100 2 .5 ’ -5 5 -1 0 0


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    HCPL-4502 HCPL-0501 45typ/6 PC917 HP 4503 HP 4502 hp 4562 A 4503 ic ic hp 4503 ci 4503 4503 4562 PDF

    27CX641-40

    Abstract: TCA 1085 asahi 27CX641-45 27CX642-40 27CX642-45 27CX642-55 192x8
    Text: - 74 - 2 7 C 6 4 1 ¿S&iSH m * a « 27CX641-40 ICT 27CX641-40 ASAHIKASEI 27CX641-40 27CX641-45 ASAHIKASEI ICT X -Y y +• > 7 ft tt TAAC max ns TCAC max (ns) TOH max (ns) 0— 70 40 20 -10—-85 40 20 CC) -10-85 40 TOE max (ns) 20 0-70 45 25 % TOD max (ns)


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    27CX641-40 27CX641-45 27CX641-S5 27HC641-55 27HC641-70 LH5749J-55 TCA 1085 asahi 27CX642-40 27CX642-45 27CX642-55 192x8 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM IDT7134SA/LA Integrated Device Technology, Inc. FEATURES: • • • • • • • • H igh-speed access — M ilitary: 25/35/45/55/70ns max. — Com m ercial: 20/25/35/45/55/70ns (max.) Low -power operation — IDT7134SA


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    IDT7134SA/LA 25/35/45/55/70ns 20/25/35/45/55/70ns IDT7134SA IDT7134LA IL-STD-883, MIL-STD-883, 48-pin 52-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Rectifier Diodes Type V rrm V Ifavm •f s m vF R thJC A A V °C/W tA = 25°C 10 ms ¡F = IfAVM tvj = 25°C RthJA tvj max outline °c/w °c BYS 21-45 45 1,0 50 0,55 - 20 125 134 BYS 21-90 90 1,0 30 0,90 - 30 125 134 BYS 22-45 45 1,7 100 0,55 - 8 125


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    BYV143 GG21A7 PDF

    CY2148-45PC

    Abstract: CY2147-35PC mb8147 CY2147-55PC cy21l48-55pc MB8144NL 55PC MB8147E 18PIN C2147H-3
    Text: - 4 K X m. % a £ ÏS Æ ÏË ff i OC TOH •in ns) TOD max (ns) TWP min (ns) TDS 20 5 30 20 INTEL 0— 70 55 55 0-70 35 35 CY21L47-55PC/DC CYPRESS 0 — 70 S t a t i c 45 45 55 55 20 20 RAM ( 4 0 9 6 X 1 ) & 1î TOE max (ns) CYPRESS 0— 70 7 TCAC max (ns)


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    4096X1) 18PIN C2147H-3 CY21147-3SPC/DC CY21L47-45PC/DC CY21L47-55PC/Dâ MB8144NL MB8147E MB8147F-35 M88147F-45 CY2148-45PC CY2147-35PC mb8147 CY2147-55PC cy21l48-55pc 55PC PDF

    Untitled

    Abstract: No abstract text available
    Text: □ Mini-Circuits 50 ohms and 75 ohms ZSC-3 ZMSC-3 ISOLATION dB FREQ. RANGE MHz M O D EL NO. M L W Typ. Min Typ. Min. u Typ. Min. L M Typ. Max. U L Typ. Max. Typ. Max. ZFSC-3-1 ZFSC-3-1W ZFSC-3-13 ZFSC-3-4 1-500 2-750 1-200 1-1000 30 30 45 35 20 20 30 20 30 20


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    ZFSC-3-13 PDF

    MBM27C128-25

    Abstract: M5M27C128K-15 M5M27C128K15 27c1028 TI 27C128 uveprom 57C128F-90 57C128F-70 AT27C128-12 i2764 27C128-15
    Text: - 92 - 2 7 C 12 8 m £ £ i u o s i x 4 M » 7 A üb ns) 27C128-12 MICROCHIP —70 120 120 65 50 4. 5 - 5 . 5 20/2 0.8 2.0 6 0. 45/2.1 2.4/0.4 12 27C128-15 MICROCHIP 0—-70 150 150 70 50 4. 5— 5. 5 20/2 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 12 CO TAAC max


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    27C12S-12 27C128-15 27C128-17 27C128-20 27C128-25 M5M27C128K-2 MBM27CI28-20 MBM27C128-25 384x8) 27C128 M5M27C128K-15 M5M27C128K15 27c1028 TI 27C128 uveprom 57C128F-90 57C128F-70 AT27C128-12 i2764 PDF

    1250-SS

    Abstract: No abstract text available
    Text: HIG H -S P E E D 4K X 8 D U A L - P O R T STATIC SRAM IDT7134SA/L A FEATURES: • • • • • • • • High-speed access — M ilitary: 25/35/45/55/70ns max. — Industrial: 55ns (max.) — C om m ercial: 20/25/35/45/55/70ns (max.) Low-power operation


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    IDT7134SA/L 25/35/45/55/70ns 20/25/35/45/55/70ns IDT7134SA IDT7134LA IL-STD-883, MIL-STD-883, 48-pin 52-pin 1250-SS PDF

    ge d45h11

    Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7
    Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2


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    D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d45h11 GE D45H2 ge d44h11 D44H8 D44H1 D44H2 transistor d44h11 D44H7 PDF

    ENC911D-20A

    Abstract: ENC390 ENC820D-20A-ENC471 ENC241 ENC101D-20A DJ20A ENC112D-20A ENC621D10A enc471 UL1414
    Text: ENC r& D-20 [m m ] • 5Èfé Ta = 25°C ENC220D-20B- ENC680D-20B % & V 1mA (V) ACrms(V) ENC220D-20B 22 (20—24) 14 ENC270D-20B ENC330D-20B 27 (24—30) 33(30-36) 39(35-43) 47(42-52) 56(50-62) 17 20 25 30 35 31 38 45 68 (61-75) 40 56 ENC390D-20B ENC470D-20B


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    ENC220D-20B ENC270D-20B ENC330D-20B ENC390D-20B ENC470D-20B ENC560D-20B ENC680D-20B ENC820D-20A ENC101D-20A ENC121D-20A ENC911D-20A ENC390 ENC820D-20A-ENC471 ENC241 ENC101D-20A DJ20A ENC112D-20A ENC621D10A enc471 UL1414 PDF

    ge d44h11

    Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
    Text: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2


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    D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d44h11 D44* general electric npn to-220 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED 2 K X 16 DUAL-PORT SRAM IDT7133SA/LA IDT7143SA/LA Integrated D evice Technology, Inc. FEATURES: • High-speed access — Military: 25/35/45/55/70/90ns max. — Industrial: 55ns (max.) — Com m ercial: 20/25/35/45/55/70/90ns (max.) • Low-power operation


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    IDT7133SA/LA IDT7143SA/LA 25/35/45/55/70/90ns 20/25/35/45/55/70/90ns IDT7133/43SA 1150mW IDT7133/43LA 1050mW IDT7133 IDT7143 PDF

    SCR Handbook, rca

    Abstract: C106Y RCA 559 TO3 SCR Handbook, rca s2061a
    Text: mm • H Silicon Controlled Rectifiers SCR’s Type Selection Charts Voltage Current !T R C A (R M S) Types A IT S M Temp. V DROM V RROM V 50/60 Hz A Max.-Gate Char. IG T V GT mA V 3.5 18.5/20 45 200 2.5 100 15 30 50 100 3.14 14/15 45 200 0.5 0.8 2.5 100


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    C106Q C106Y C106D C106M TQ-202AB S122F S122A S122B S122D S122E SCR Handbook, rca RCA 559 TO3 SCR Handbook, rca s2061a PDF

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C16256L 3.3 VOLT 2 5 6 K X 16 FA S T PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R ELIM IN A R Y 40 45 50 60 Max. RAS Access Tim e, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns


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    V53C16256L 16-bit 40-pin 40/44L-pin PDF

    BSW21A

    Abstract: 2n2222 npn BSW22A BC107 BCY65E BC17 BC178 BSX51A BSX52A BCY58
    Text: Small Signal M etal TO-18 METAL TRANSISTORS NPN TYPES G E N E R A L PURPOSE SW ITCH A N D A M P L IF IE R v CEO V C E R (+ ) (V q q ) I q max. (m A ) H pE min. @ NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 45 20 32 45 60 25 50 60 25 50 60 100 100 200 200


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    BC107 BC108AB BCY58 BCY59 BCY65E BSX51 BSX51A BSX51B BSX52 BSX52A BSW21A 2n2222 npn BSW22A BC17 BC178 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 20352D International IGR Rectifier 20CLQ045 SCHOTTKY RECTIFIER 20 Amp Desciption/Features Major Ratings and Characteristics Characteristics 25CLQ045 Units 20 A 45 V Ifs m @ tp = 8.3ms sine 250 A VF @ 10Apk, T j = 125°C 0.48 V -55 to 150 °C If a v Rectangular


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    20352D 20CLQ045 20CLQ045 MIL-PRF-19500 237994Tel: PDF