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    44N60 Search Results

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    44N60 Price and Stock

    Littelfuse Inc IXFX44N60

    MOSFET N-CH 600V 44A PLUS247
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    IXYS Corporation IXFL44N60

    MOSFET N-CH 600V 41A ISOPLUS264
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    DigiKey IXFL44N60 Tube 25
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    IXYS Corporation IXFN44N60

    MOSFET N-CH 600V 44A SOT-227B
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    IXYS Corporation IXFE44N60

    MOSFET N-CH 600V 41A SOT-227B
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    DigiKey IXFE44N60 Tube 10
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    Littelfuse Inc IXFR44N60

    MOSFET N-CH 600V 38A ISOPLUS247
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    DigiKey IXFR44N60 Tube 300
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    Newark IXFR44N60 Bulk 300
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    RS IXFR44N60 Bulk 8 Weeks 30
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    Bristol Electronics IXFR44N60 33
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    44N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFN 44N60 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ


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    44N60 OT-227 PDF

    44N60

    Abstract: IXFN44N60
    Text: IXFL 44N60 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 600 V 41 A Ω 130 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    44N60 ISOPLUS-264TM IXFN44N60 728B1 123B1 728B1 065B1 44N60 PDF

    44N60

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS on = 130 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW


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    ISOPLUS247TM 44N60 247TM E153432 44N60 PDF

    44N60

    Abstract: 125OC
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = ID25 = RDS on = D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Test Conditions trr £ 250 ns G S Symbol S Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MW


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    44N60 OT-227 E153432 125OC 44N60 125OC PDF

    44N60

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS on = 130 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


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    ISOPLUS247TM 44N60 247TM E153432 44N60 PDF

    44N60

    Abstract: tc 122 25 5
    Text: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C


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    44N60 44N60 247TM O-264 125OC tc 122 25 5 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFE 44N60 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600


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    44N60 IXFN44N60 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C


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    44N60 247TM 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS on = 130 mW (Electrically Isolated Back Surface) Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


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    ISOPLUS247TM 44N60 247TM E153432 PDF

    44N60

    Abstract: No abstract text available
    Text: IXFX 44N60 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 600 V 44 A 130 mW trr £ 250 ns Preliminary data sheet Maximum Ratings PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    44N60 247TM 44N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = ID25 = RDS on = D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original
    44N60 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFX 44N60 IXFK 44N60 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient


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    44N60 44N60 247TM O-264 PDF

    w44a

    Abstract: 44N60 IXFN44N60
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 44N60 VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S trr ≤ 250 ns S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    44N60 IXFN44N60 728B1 w44a 44N60 PDF

    44N60

    Abstract: 125OC
    Text: HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C


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    44N60 247TM O-264 125OC 44N60 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = ID25 = RDS on = 600 V 44 A 130 mW D trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR


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    44N60 OT-227 E153432 125OC PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


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    ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = D25 RDS on = trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS T j =25°Cto150°C 600 V v DGR Tj = 25° C to 150° C; RGS= 1 Mi2


    OCR Scan
    IXFN44N60 Cto150 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S Advanced Technical Information IXFN 44N60 HiPerFET Power MOSFETs Single Die MOSFET VDSS r ds,o„, V DSS Td = 25°C to 150°C 600 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 600 V VGS Continuous ±20 V V GSM Transient ±30 V ^D25 Tc = 25°C 44


    OCR Scan
    44N60 OT-227 E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S HiPerFET Power MOSFETs IXFX 44N60 V DSS ^D25 R DS on Single MOSFET Die 600V 44A 130 mil trr <250 ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V V DOR T j =25°C to150°C T j = 2 5 °C to 1 5 0 °C ;R GS=1 MO 600 600 V V V GS


    OCR Scan
    to150 44N60 PLUS247TM PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 44N60 IXFK 44N60 600 V 44 A 130 mQ V,DSS ^D25 R DS on Single MOSFET Die t rr < 250 ns Maximum Ratings Symbol Test Conditions V VDGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i


    OCR Scan
    44N60 PDF

    d5565

    Abstract: No abstract text available
    Text: QIXYS ADVANCEDTECHNICAL INFORMATION HiPerFET Power MOSFET IXFK 44N60 DSS I Single MOSFET Die trr <250 ns Symbol Test Conditions V V™ Tj = 25°C to 150°C T, = 25°C to 150°C 600 600 V V Vos Continuous Transient ¿20 ±30 V V Tc =25°C Tc = 25° C Tc =25°C


    OCR Scan
    44N60 O-264 d5565 PDF

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan
    ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q PDF