MAX14803AEWZ
Abstract: MAX14803 MAX14802
Text: 19-4484; Rev 3; 8/11 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
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16-Channel,
MAX14802/MAX14803/MAX14803A
16-bit
00V/-100V,
00V/0V,
0V/-160V.
MAX14803A;
MAX14802ECM+
MAX14803AEWZ
MAX14803
MAX14802
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Untitled
Abstract: No abstract text available
Text: 19-4484; Rev 3; 8/11 Low-Charge Injection, 16-Channel, High-Voltage Analog Switches Features The MAX14802/MAX14803/MAX14803A provide highvoltage switching on 16 channels for ultrasonic imaging and printer applications. The devices utilize HVCMOS process technology to provide 16 high-voltage lowcharge-injection SPST switches, controlled by a digital
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16-Channel,
MAX14802/MAX14803/MAX14803A
16-bit
00V/-100V,
00V/0V,
0V/-160V.
MAX14803A;
MAX14802ECM+
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4484
Abstract: nuclear battry 4484-2
Text: Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K 8192 words x 8 bits SRAM Overview • Common-pin input/outputs, 3-state output The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment.
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4484B
LC3564RM
RT-10LV/12LV/15LV
8192-word
4484
nuclear battry
4484-2
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4484 8 pin
Abstract: TLE 5025 4484 AEB02862 AEP02857 AES02863 Q67006-A9396 4484 mos vq15 TLE 4484 G
Text: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Target Data Features • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption
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OT-223
Q67006-A9396
P-SOT223-4-2
4484 8 pin
TLE 5025
4484
AEB02862
AEP02857
AES02863
Q67006-A9396
4484 mos
vq15
TLE 4484 G
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TLE 4484 G
Abstract: AEB02862 AEP02857 AES02863 Q67006-A9396 GSRH 4484 8 pin xs 004 a
Text: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Features • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption Short circuit protected
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OT-223
Q67006-A9396
P-SOT223-4-2
TLE 4484 G
AEB02862
AEP02857
AES02863
Q67006-A9396
GSRH
4484 8 pin
xs 004 a
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AEB02862
Abstract: AEP02857 Q67006-A9396 4484 8 pin
Text: Dual Voltage Regulator with 5 V and 15 V Outputs TLE 4484 Features • • • • • • • • • Dual output: 5 V and 15 V High input voltage range: up to 45 V High output current capability High output voltage accuracy Very low current consumption Short circuit protected
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P-SOT223-4
AEB02862
AEP02857
Q67006-A9396
4484 8 pin
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mrc 452
Abstract: elth LT2012 Weinschel Corp distributor in egypt
Text: General Information & Indexes US Sales Representatives. 4 4 4 2 3 4 2 4 9 7 2 3 2 3 2 12 2 2 3 2 2 2 3 2 2 12 9 5 6 10 2 2 1 11 8 11 McNamara Associates, 5936 Busch Drive, Malibu, CA 90265, Tel: 310-428-5715 Fax: 775-261-5235 email: gjmc@aol.com 1 2 . Cain-Forlaw, Co.: 510 N. Plum Grove Road, Palatine, IL 60067,
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428-A
mrc 452
elth
LT2012
Weinschel Corp
distributor in egypt
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Untitled
Abstract: No abstract text available
Text: V910ME16 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) £(f) (dBc/Hz) -50 FEATURES • Frequency Range: 3990 - 4490 MHz • Tuning Voltage: 0-11 Vdc • MINI-14S-L - Style Package
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V910ME16
MINI-14S-L
MINI-14S
MINI-14S-LOW
MINI-14S-L
FRM-S-002
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Untitled
Abstract: No abstract text available
Text: V910ME16 PHASE NOISE 1 Hz BW, typical 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com -50 Voltage-Controlled Oscillator Surface Mount Module -70 • Microwave Radios
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V910ME16
AN-101:
AN-102:
AN-107:
MINI-14S
MINI-14S-LOW
MINI-14S-L
FRM-S-002
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AN-101
Abstract: V910ME16
Text: V910ME16 PHASE NOISE 1 Hz BW, typical 9939 Via Pasar | San Diego, CA 92126 TEL: (858) 621-2700 | FAX: (858) 621-2722 URL: www.zcomm.com EMAIL: applications@zcomm.com -50 Voltage-Controlled Oscillator Surface Mount Module -70 • Microwave Radios • Satellite Communications
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V910ME16
AN-101:
AN-102:
AN-107:
MINI-14S
MINI-14S-LOW
MINI-14S-L
FRM-S-002
AN-101
V910ME16
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Untitled
Abstract: No abstract text available
Text: V910ME16 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) £(f) (dBc/Hz) -50 FEATURES • Frequency Range: 3990 - 4490 MHz • Tuning Voltage: 0-11 Vdc • MINI-14S-L - Style Package
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V910ME16
MINI-14S-L
MINI-14H
MINI-14S
MINI-14LOW
MINI-14H-LOW
MINI-14S-L
MINI-14H-L
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sharp CCD Image Sensor
Abstract: sharp CCD Camera area CCD sensor 2.2 black V11R
Text: Developed High-Definition 1/1.72 Type 14M CCD CCD Area Image Sensor MN34520PL Overview MN34520PL, which is the most suitable for a high-definition digital still camera and a CCD image sensor with industry-leading 14,750 thousands pixels in the 1/1.72 type, has been developed. Using RGBBayer-array primary color on-chip filters enables excellent color
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MN34520PL
MN34520PL,
720/30P.
MN34520PL
sharp CCD Image Sensor
sharp CCD Camera
area CCD sensor 2.2 black
V11R
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lt 6229
Abstract: riyadh cable ST 11791 MRC 452 1441-3 ELTH 26 SEKI ST 22 6F2-19-15 riyadh electrical cable mrc 436
Text: General Information & Indexes US Sales Representatives. 4 4 4 2 3 4 2 4 9 7 2 3 2 3 2 12 2 2 3 2 3 2 2 12 2 6 10 2 2 1 1 11 8 11 McNamara Associates, 5936 Busch Drive, Malibu, CA 90265, Tel: 310-428-5715 Fax: 424-644-8043 email: gjmc@aol.com 1 8 1 1 1 8
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428-A
RT355)
lt 6229
riyadh cable
ST 11791
MRC 452
1441-3
ELTH 26
SEKI ST 22
6F2-19-15
riyadh electrical cable
mrc 436
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ra2t
Abstract: a0191 SOP28 Package
Text: Ordering number: EN 4484B CMOS LSI No. 4484B i SAHYO LC3564RM.RT-1 OLV/12LV/15LV 64K 8192 words x 8 bits SRAM • Common-pin input/outputs, 3-state output Overview The LC3564RM,RT are 8192-word x 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They oper
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4484B
LC3564RM
OLV/12LV/15LV
8192-word
00171S0
ra2t
a0191
SOP28 Package
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Thomson ceramic capacitor
Abstract: TSFL06 K 3264 CERAMIC LCCC 68 TSFL TSBC LAYER .35 micron gate array TSFL12 TSGC
Text: THOMSON MIL ET SPATIAUX SSE 1> • S02bfl7S DDDÜSÜ7 ^23 ■ THCM T^Hà- ASIC PRODUCTS TMS offers a wide range of ASIC's products : bipolar, MOS, BICMOS, linear, digital, gate arrays, standard cells, full custom. All — — — ASIC's products are available with the following screening levels :
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00D0SQ7
Thomson ceramic capacitor
TSFL06
K 3264
CERAMIC LCCC 68
TSFL
TSBC
LAYER
.35 micron gate array
TSFL12
TSGC
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KA78
Abstract: DL92 DL921 dl92 pentode
Text: c J ù n i u h d t I d l 92 OUTPUT PENTODE for battery receivers PENTHODE DE SORTIE pour des appareils batterie ENDPENTODE für Batteriegeräte Heating: direct by battery current, rectified À.G or D*C.;series or parallel supply Chauffages direct par courant batterie, C.A.redressé
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TSGB01
Abstract: TSFL12 TSFL06 Thomson Linear Integrated Circuits TSGB 54080
Text: ASIC PRODUCTS THOMSON MIL ET SPATIAUX TMS offers a wide range of ASIC's products, BIPOLAR, MOS, LINEAR, DIGITAL GATE ARRAYS, STANDARD CELLS, FULL CUSTOM. All ASIC’s products are available with the following screening / quality classes: - Military temperature ra n g e ;
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00DDD3B
30x30
TSGB01
TSFL12
TSFL06
Thomson Linear Integrated Circuits
TSGB
54080
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c533 DIODE
Abstract: No abstract text available
Text: GD54/74HC533, GD54/74HCT533 OCTAL 3-STATE INVERTING D-TYPE TRANSPARENT LATCHES General Description These devices are identical in pinout to the 5 4 /7 4 L S 5 3 3 . They contain eight D-type latches, one latch enable, and one output control. These lat ches appear transparent to data, i.e., the outputs
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GD54/74HC533,
GD54/74HCT533
c533 DIODE
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Untitled
Abstract: No abstract text available
Text: ai •Ni Cd 531National dimSemiconductor 54F/74F573 Octal D-Type Latch with TRI-STATE Outputs General Description Features The ’F573 is a high speed octal latch with buffered common Latch Enable LE and buffered common Output Enable (C)E) inputs. • Inputs and outputs on opposite sides of package
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54F/74F573
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Untitled
Abstract: No abstract text available
Text: • 4302571 QDSmiD tSü ■ HAS E5J HARRIS IRFP15 0 /1 5 1 /1 5 2 /1 53 IRFP150R/151 R /152R/153R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-247 TOP VIEW • 3 4 A and 40 A , 6 0 V - 1 0 0V • rD S on = 0 .0 5 5 H an d 0 .0 8 0
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IRFP15
IRFP150R/151
/152R/153R
O-247
IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP150R,
IRFP151R,
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Untitled
Abstract: No abstract text available
Text: 610 54F/74F610 • 54F/74F612 • 612 Connection Diagrams -r~ r Memory Mappers With 3-State Outputs and Output Latches Description The 'F610 ana^F§12 memory mappers are designed to expand the address capability o f a Central Processing Unit CPU by eight bits. These
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54F/74F610
54F/74F612
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74*612
Abstract: memory mapper 612
Text: 610 54F/74F610 • 54F/74F612 • 612 Connection Diagrams - - Memory Mappers W iib3-State Outputs and Output Latches The ’F610 A d K f ir z jn e m o r y mappers are designed to expand the address c a p 4 | U t y ^ a C jp tra l Processing Unit CPU by eight bits. These
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54F/74F610
54F/74F612
74*612
memory mapper 612
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diode 4483
Abstract: IRFP150R irfp 350 n 4484 MOSfet
Text: IRFP150/151/152/153 IRFP150R/1 51R /152R/153R 23 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 34A and 40A, 60V - 100V TOP VIEW • r0S on = 0.055£1 and 0 .0 8 fl DRAIN (T A B ) • Single Pulse Avalanche Energy Rated*
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IRFP150/151/152/153
IRFP150R/1
/152R/153R
IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP150R,
IRFP151R,
IRFP152R,
diode 4483
IRFP150R
irfp 350 n
4484 MOSfet
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F610
Abstract: F612 74f610 memory mapper 612 74 610 memory
Text: 610 54F/74F610 • 54F/74F612 612 • Connection Diagrams Memory Mappers With 3-State Outputs and Output Latches Description , The ’FCTO em ory mappers are designed to expand the address r r i p m n Cgptral Processing Unit CPU by eight bits. These devices c o n ta in ^ i^ b e n ^ p a A fe g ^ te r s , each con tain ing tw elve bits, that
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54F/74F610
54F/74F612
F610
F612
74f610
memory mapper 612
74 610 memory
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