Untitled
Abstract: No abstract text available
Text: SFF9130M SFF9130Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -11 AMP P-Channel POWER MOSFET DESIGNER’S DATA SHEET 1/ Part Number / Ordering Information
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SFF9130M
SFF9130Z
SFF9130
O-254
O-254Z
FP0025E
O-254
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mosfet triggering circuit for dc motor
Abstract: 4470 mosfet capacitor cross reference FORWARD REVERSE 3 PHASE MOTOR wiring diagram hybrid pwm dc motor MSK4470
Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 10 AMP, 500V, 3 PHASE IGBT BRUSHLESS MOTOR CONTROLLER 4470 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500 Volt Motor Supply Voltage 10 Amp Output Switch Capability 100% Duty Cycle High Side Conduction Capable
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MIL-PRF-38534
MSK4470
mosfet triggering circuit for dc motor
4470 mosfet
capacitor cross reference
FORWARD REVERSE 3 PHASE MOTOR wiring diagram
hybrid pwm dc motor
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Untitled
Abstract: No abstract text available
Text: SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -60 AMP/-50 Volts 25 m typical P-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/
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SFF60P05M
SFF60P05Z
AMP/-50
SFF60P05
O-254
O-254Z
SFF60P05M,
SFF60P05MUB,
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SFF60P05M
Abstract: SFF60P05Z
Text: SFF60P05M SFF60P05Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -60 AMP/-50 Volts 25 m typical P-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/
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SFF60P05M
SFF60P05Z
AMP/-50
SFF60P05
O-254
O-254Z
SFF60P05M,
SFF60P05MUB,
SFF60P05M
SFF60P05Z
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s8212
Abstract: mosfet 0018 mosfet SPICE MODEL spice model AN 4470 mosfet 15-Sep-08 SIE860DF
Text: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiE860DF
S-82128
15-Sep-08
s8212
mosfet 0018
mosfet SPICE MODEL
spice model AN
4470 mosfet
15-Sep-08
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s8212
Abstract: No abstract text available
Text: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiE860DF
18-Jul-08
s8212
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FX20KMJ-3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2
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FX20KMJ-3
100ns
FX20KMJ-3
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fx20smj3
Abstract: 4470 mosfet
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20SMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2
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FX20SMJ-3
100ns
fx20smj3
4470 mosfet
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Untitled
Abstract: No abstract text available
Text: Analog Power AM4470N N-Channel 200-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 295 @ VGS = 10V 335 @ VGS = 4.5V ID(A) 2.7 2.5 Typical Applications:
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AM4470N
AM4470N
AM4470N-T1-XX
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FX20VSJ-3
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20VSJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5
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FX20VSJ-3
100ns
FX20VSJ-3
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4470 mosfet
Abstract: fx20umj3
Text: MITSUBISHI Pch POWER MOSFET RY A N I FX20UMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX20UMJ-3 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0 3.2
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FX20UMJ-3
100ns
4470 mosfet
fx20umj3
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Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFK250N10P IXFX250N10P TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)
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IXFK250N10P
IXFX250N10P
200ns
O-264
100ms
250N10P
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IXFK
Abstract: IXFK250N10P IXFX250N10P PLUS247
Text: Preliminary Technical Information IXFK250N10P IXFX250N10P PolarTM Power MOSFET HiperFETTM VDSS ID25 = = ≤ RDS on 100V 250A Ω 6.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) (TAB) Symbol Test Conditions Maximum Ratings
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IXFK250N10P
IXFX250N10P
O-264
100ms
250N10P
IXFK
IXFK250N10P
IXFX250N10P
PLUS247
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IXFK250N10P
Abstract: IXFX250N10P PLUS247 3jpd
Text: IXFK250N10P IXFX250N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C (Chip Capability)
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IXFK250N10P
IXFX250N10P
200ns
O-264
100ms
250N10P
IXFK250N10P
IXFX250N10P
PLUS247
3jpd
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6389G50
Abstract: SIEMENS tle 420 TLE 4242 G Daelim 4269 HATTELAND TLE6389G50-1 4299G HB sot23 6389GV
Text: Ultimate POWER – Perfect Control COMPLETE Automotive Solutions from Infineon www.infineon.com/power Never stop thinking. Introduction Power and control – combine your success T H E E V E R I N C R E A S I N G level of power and control needed in automotive electronics is driving innovation in modern vehicles.
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B112-H6731-G10-X-7600
6389G50
SIEMENS tle 420
TLE 4242 G
Daelim
4269
HATTELAND
TLE6389G50-1
4299G
HB sot23
6389GV
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FX20KMJ-3
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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FDMS2506SDC
Abstract: No abstract text available
Text: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMS2506SDC
FDMS2506SDC
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Untitled
Abstract: No abstract text available
Text: lO M fiR D T Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O i t F O r iT I D d t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C
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O-220FN
O-220
TQ-220S
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20KMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • 4V DRIVE • V d s s .-150V • rDS ON (MAX) . 0.29Í2
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FX20KMJ-3
-150V
100ns
O-220FN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20SMJ-3 OUTLINE DRAWING Dimensions in mm .4 .5 . 1 5.9 m ax 1.5 < >3.2 mr IrT ¥ 4 .4 1.0 © © 5.45 © 5 .4 5 0.6 0( • 4V DRIVE ©GATE © D R A IN o- • V ds s . -1 5 0 V
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FX20SMJ-3
100ns
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX20UMJ-3 OUTLINE DRAWING Dimensions in mm • 4V DRIVE • V dss . -1 5 0 V • rDS ON (MAX) . 0.29ÍÍ
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FX20UMJ-3
100ns
O-220
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX20VSJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm L © 1 0 ©GATE o- • 4V DRIVE © Ò -H CO c\i © D R A IN ©SOURCE © D R A IN H • V ds s . -1 5 0 V
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FX20VSJ-3
100ns
O-220S
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423R
Abstract: f423 IR 423
Text: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE
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F420/421/422/423
FF420R/421
/422R
/423R
O-205AF
IRFF420,
IRFF421,
IRFF422,
IRFF423
IRFF420R,
423R
f423
IR 423
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Untitled
Abstract: No abstract text available
Text: • 4305271 0 D S m ? 5 JSHARRIS 344 ■ HAS IR FF420/421/422/423 IRFF420R/421R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0fl and 4.00 • Single Pulse Avalanche Energy Rated*
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FF420/421/422/423
IRFF420R/421R
/422R
/423R
O-205AF
IRFF420,
IRFF421,
IRFF422,
IRFF423
IRFF420R,
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