BC817A
Abstract: BC807A
Text: BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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BC817A
BC817A
BC807A
440um
440um
110um
110um
BC807A
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Untitled
Abstract: No abstract text available
Text: 9012A 9012A Silicon PNP Epitaxial Transistor Description: The 9012A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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440um
440um
110um
110um
-50mA
-500mA
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BC807A
Abstract: BC817A
Text: BC807A BC807A Silicon PNP Epitaxial Transistor Description: The BC807A is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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BC807A
BC807A
BC817A
440um
440um
110um
110um
BC817A
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Untitled
Abstract: No abstract text available
Text: BC817 BC817 Silicon NPN Epitaxial Transistor Description: The BC817is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807 Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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BC817
BC817is
BC807
440um
110um
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Untitled
Abstract: No abstract text available
Text: BC807 BC807 Silicon PNP Epitaxial Transistor Description: The BC807is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC817 Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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BC807
BC807is
BC817
440um
110um
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9013A
Abstract: No abstract text available
Text: 9013A 9013A Silicon NPN Epitaxial Transistor Description: The 9013A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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440um
440um
110um
110um
500mA
9013A
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5401 transistor
Abstract: 5401 5551 transistor transistor 5401
Text: 5401 5401 Silicon PNP Epitaxial Transistor Description: The 5401 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥150V@IC=1mA ●Complementary to 5551 Chip Appearance
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VCEO150V
440um
440um
110um
110um
-120V,
5401 transistor
5401
5551 transistor
transistor 5401
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5551
Abstract: 5551 transistor 5551 datasheet 5401 555-1
Text: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance
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VCEO160V
440um
440um
110um
110um
5551
5551 transistor
5551 datasheet
5401
555-1
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BR 1n70
Abstract: 0.8um 700V mos 1N70
Text: 3VD199700YL 3VD199700YL 高压MOSFET芯片 描述 Ø 3VD199700YL为采用硅外延工艺制造的N沟道增 强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD199700YL
3VD199700YL
3VD199700YLN
700VMOS
O-251-3L
2070m
1900m
556um
440um
BR 1n70
0.8um
700V mos
1N70
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Untitled
Abstract: No abstract text available
Text: Attenuators Type N DC -1 8 GHz Precision Performance Frequency: D C -1 8 .0 GHz, D C -1 2.4 , and DC - 8.0 units available Attenuation Values: 1 - 60 dB as noted Attenuation Accuracy: i - 6 d B ± 0 .3 d B 7 - 20 dB 21 - 40 dB ± 0.5 dB + 0.7 dB 41 - 60 dB
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Gunn Diode
Abstract: 10 GHz gunn diode MT030 MIL-E-15090 MTH80
Text: SERIES MT SERIES MTH GUNN DIODE « - 1 8 GHz OSCILLATORS " GENERAL SPECIFICATIONS: Temperature Range: Turn On Stability Time: Finish: Environmental: Harmonics: Spurious: Load VSWR: —20°C to +55°C 1 ms max. Paint per MIL-E-15090 Type II CL2 MIL-STD-202
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MIL-E-15090
MIL-STD-202
MT030
MT060
MT030-Transistor)
MT060)
MT060
MT104
MT145
Gunn Diode
10 GHz gunn diode
MT030
MTH80
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