43B diode
Abstract: DIODE S 43a marking code 43b marking 43b diode 43b marking 43C marking JC diode 43B MARKING marking 43a marking code 43a
Text: Silicon PIN Diodes ● High-speed switching ● Phase shifting up to 10 GHz ● Power splitter BXY 43 Type Marking Ordering Code Pin Configuration Package1 BXY 43A – Q62702-X116 Cathode: black dot, T1 BXY 43B Q62702-X104 BXY 43C Q62702-X105 Maximum Ratings
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Q62702-X116
Q62702-X104
Q62702-X105
43B diode
DIODE S 43a
marking code 43b
marking 43b
diode 43b
marking 43C
marking JC diode
43B MARKING
marking 43a
marking code 43a
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marking 43a
Abstract: marking code 43a IRFH5207TR2PBF IRFH5207TRPBF AN-1154 IRFH5207
Text: PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 75 V 9.6 mΩ Qg (typical) RG (typical) 39 nC 1.7 Ω ID 71 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5207PbF
IRFH5207TRPBF
IRFH5207TR2PBF
095mH,
marking 43a
marking code 43a
IRFH5207TR2PBF
IRFH5207TRPBF
AN-1154
IRFH5207
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IRFH5207
Abstract: N-Channel 40V MOSFET
Text: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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-96298A
IRFH5207PbF
095mH,
IRFH5207
N-Channel 40V MOSFET
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Untitled
Abstract: No abstract text available
Text: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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-96298A
IRFH5207PbF
095mH,
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Untitled
Abstract: No abstract text available
Text: IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRFH5207PbF
IRFH5207TRPbF
095mH,
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application • Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRFR7546PbF
IRFU7546PbF
JESD47F)
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marking code 43a
Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
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91372B
IRF1010NS/L
IRF1010NS)
IRF1010NL)
packag10)
marking code 43a
43A MARKING CODE
IRF1010NS
AN-994
IRF1010N
IRF1010NL
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Untitled
Abstract: No abstract text available
Text: IRF1010NS IRF1010NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D 2 P ak T O -26 2 IRF1010NL IRF1010NS Description The D2Pak is a surface mount power package capable of
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IRF1010NS
IRF1010NL
IRF1010NL)
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Untitled
Abstract: No abstract text available
Text: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!
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IRF1010NSPbF
IRF1010NLPbF
EIA-418.
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AN-994
Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
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91372B
IRF1010NS/L
IRF1010NS)
IRF1010NL)
AN-994
IRF1010N
IRF1010NL
IRF1010NS
to262 pcb footprint
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AN-994
Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ
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IRF1010NSPbF
IRF1010NLPbF
EIA-418.
AN-994
IRF1010N
IRF1010NL
IRL3103L
43a 504 pcb mounted
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Untitled
Abstract: No abstract text available
Text: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from
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IRF1010NS
IRF1010NL
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marking code 43a
Abstract: IRFP054N 43A MARKING CODE irf1010 applications marking 43a IRF1010 IRFPE30
Text: PD 9.1382 IRFP054N PRELIMINARY HEXFET Power MOSFET ● ● ● ● ● Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012Ω ID = 72A Description Fifth Generation HEXFETs from International Rectifier
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IRFP054N
O-247
marking code 43a
IRFP054N
43A MARKING CODE
irf1010 applications
marking 43a
IRF1010
IRFPE30
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marking 43a
Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS
Text: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from
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IRF1010NS
IRF1010NL
marking 43a
AN-994
IRF1010N
IRF1010NL
IRF1010NS
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marking code 43a
Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ
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IRF1010NSPbF
IRF1010NLPbF
EIA-418.
marking code 43a
43A MARKING CODE
AN-994
IRF1010N
IRF1010NL
IRL3103L
43a 504
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Untitled
Abstract: No abstract text available
Text: PD - 94970A IRF2807PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 75V RDS on = 13mΩ G ID = 82A S Description
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4970A
IRF2807PbF
O-220
O-220AB
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IRF2807PBF
Abstract: IRF1010
Text: PD - 94970A IRF2807PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 75V RDS on = 13mΩ G ID = 82A S Description
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4970A
IRF2807PbF
O-220
O-220AB
IRF2807PBF
IRF1010
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Untitled
Abstract: No abstract text available
Text: PD - 94966A IRF1010NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 11mΩ G ID = 85A S Description
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4966A
IRF1010NPbF
O-220
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IRF1010N
Abstract: 43A MARKING CODE marking code 43a IRF1010
Text: PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description Fifth Generation HEXFETs from International Rectifier utilize advanced
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1278B
IRF1010N
O-220
IRF1010N
43A MARKING CODE
marking code 43a
IRF1010
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marking 43a
Abstract: AN-994 IRF2807L IRF2807S
Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International
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IRF2807S
IRF2807L
marking 43a
AN-994
IRF2807L
IRF2807S
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IRF1010N
Abstract: No abstract text available
Text: PD - 95418 IRFI1010NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description
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IRFI1010NPbF
O-220
IRF1010N
I840G
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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OCR Scan
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IRF2807S)
IRF2807L)
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irf2807 equivalent
Abstract: No abstract text available
Text: T O -9.1662 International IG R Rectifier • • • • • PRELIMINARY IRFI2807 HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 75V F fo s o n = 0 . 0 1
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IRFI2807
T0-220
irf2807 equivalent
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SD 1029 MOSFET
Abstract: diode LT 42
Text: PD -9.1518 International IÖR Rectifier IRF2807S/L PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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IRF2807S/L
IRF2807S)
IRF2807L)
SD 1029 MOSFET
diode LT 42
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