Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    43A 504 PCB MOUNTED Search Results

    43A 504 PCB MOUNTED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd

    43A 504 PCB MOUNTED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    43a 504 pcb mounted

    Abstract: 43a 504 m 60 n 03 g10 AN-994
    Text: IRF2807S/IRF2807L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance


    Original     		PDF IRF2807S/IRF2807L 43a 504 pcb mounted 43a 504 m 60 n 03 g10 AN-994

    AN-994

    Abstract: IRL3705Z IRL3705ZL IRL3705ZS
    Text: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original     		PDF IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF O-220AB AN-994. AN-994 IRL3705Z IRL3705ZL IRL3705ZS

    marking code 43a

    Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original     		PDF 91372B IRF1010NS/L IRF1010NS) IRF1010NL) packag10) marking code 43a 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL

    AN-994

    Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original     		PDF 91372B IRF1010NS/L IRF1010NS) IRF1010NL) AN-994 IRF1010N IRF1010NL IRF1010NS to262 pcb footprint

    AN-994

    Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
    Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ


    Original     		PDF IRF1010NSPbF IRF1010NLPbF EIA-418. AN-994 IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted

    Untitled

    Abstract: No abstract text available
    Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ


    Original     		PDF IRF2807SPbF IRF2807LPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!


    Original     		PDF IRF1010NSPbF IRF1010NLPbF EIA-418.

    60V Single N-Channel HEXFET Power MOSFET in a HEX

    Abstract: AN-994 IRF2807L irf2807s
    Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ


    Original     		PDF IRF2807SPbF IRF2807LPbF EIA-418. 60V Single N-Channel HEXFET Power MOSFET in a HEX AN-994 IRF2807L irf2807s

    43a 504

    Abstract: marking code 43a AN-994 IRF2807L
    Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ


    Original     		PDF IRF2807SPbF IRF2807LPbF EIA-418. 43a 504 marking code 43a AN-994 IRF2807L

    marking code 43a

    Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
    Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ


    Original     		PDF IRF1010NSPbF IRF1010NLPbF EIA-418. marking code 43a 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504

    AN-994

    Abstract: IRF2807L IRF2807S
    Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International


    Original     		PDF IRF2807S IRF2807L AN-994 IRF2807L IRF2807S

    Untitled

    Abstract: No abstract text available
    Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International


    Original     		PDF IRF2807S IRF2807L

    mosfet k 61 y1

    Abstract: IRF2807 AN-994 IRF2807L IRF2807S
    Text: PD - 91518A IRF2807S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF2807S Low-profile through-hole (IRF2807L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 75V RDS(on) = 0.013Ω G ID = 82A†


    Original     		PDF 1518A IRF2807S/L IRF2807S) IRF2807L) mosfet k 61 y1 IRF2807 AN-994 IRF2807L IRF2807S

    marking 43a

    Abstract: AN-994 IRF2807L IRF2807S
    Text: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International


    Original     		PDF IRF2807S IRF2807L marking 43a AN-994 IRF2807L IRF2807S

    DIODE FS 601

    Abstract: irf 48v mosfet
    Text: PD - 96099 IRFZ48SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.018Ω G ID = 50A† Description S Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ48SPbF EIA-418. DIODE FS 601 irf 48v mosfet

    irl3705zpbf

    Abstract: IRL3705ZSPBF AN-1005 IRF1010
    Text: PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D


    Original     		PDF 5579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF O-220AB AN-994. irl3705zpbf IRL3705ZSPBF AN-1005 IRF1010

    IRL3705Z

    Abstract: IRL3705ZL IRL3705ZS
    Text: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V


    Original     		PDF 5854A IRL3705Z IRL3705ZS IRL3705ZL AN-994. O-220AB IRL3705Z IRL3705ZL IRL3705ZS

    Untitled

    Abstract: No abstract text available
    Text: PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D


    Original     		PDF 5579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF O-220AB AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V


    Original     		PDF 5854A IRL3705Z IRL3705ZS IRL3705ZL AN-994. O-220AB

    IRL3705Z

    Abstract: IRL3705ZL IRL3705ZS IRL3705
    Text: PD - 95854A IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V


    Original     		PDF 5854A IRL3705Z IRL3705ZS IRL3705ZL AN-994. O-220AB IRL3705Z IRL3705ZL IRL3705ZS IRL3705

    IRL3705Z

    Abstract: IRL3705ZL IRL3705ZS
    Text: PD - 95854 IRL3705Z IRL3705ZS IRL3705ZL AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET D VDSS = 55V


    Original     		PDF IRL3705Z IRL3705ZS IRL3705ZL AN-994. O-220AB IRL3705Z IRL3705ZL IRL3705ZS

    IRL3705Z

    Abstract: IRL3705ZL IRL3705ZS
    Text: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original     		PDF IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AN-994. O-220AB IRL3705Z IRL3705ZL IRL3705ZS

    irl3705zpbf

    Abstract: IRL3705Z IRL3705ZL IRL3705ZS IRL3705
    Text: PD - 95579 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AUTOMOTIVE MOSFET Features l l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original     		PDF IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF AN-994. O-220AB irl3705zpbf IRL3705Z IRL3705ZL IRL3705ZS IRL3705

    AN-994

    Abstract: IRFZ48 IRFZ48L IRFZ48S
    Text: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFZ48S/L IRFZ48S) IRFZ48L) AN-994 IRFZ48 IRFZ48L IRFZ48S