IRF3415S
Abstract: AN-994 IRF3415 IRF3415L
Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A
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91509C
IRF3415S/L
IRF3415S)
IRF3415L)
IRF3415S
AN-994
IRF3415
IRF3415L
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AN-994
Abstract: IRF3415 IRF3415L IRF3415S
Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A
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91509C
IRF3415S/L
IRF3415S)
IRF3415L)
AN-994
IRF3415
IRF3415L
IRF3415S
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602J SOT
Abstract: APL602J
Text: APL602J 600V 43A 0.125W D LINEAR MOSFET • Higher FBSOA S S G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . 27 S • Popular SOT-227 Package
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APL602J
OT-227
E145592
602J SOT
APL602J
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APL602J
Abstract: No abstract text available
Text: APL602J 600V 43A 0.125Ω D LINEAR MOSFET • Higher FBSOA S S G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . 27 S • Popular SOT-227 Package
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APL602J
OT-227
E145592
APL602J
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Untitled
Abstract: No abstract text available
Text: APL602J 600V 43A 0.125Ω LINEAR MOSFET S S Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . 27 2 T- D G SO "UL Recognized" ISOTOP • Higher FBSOA
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APL602J
OT-227
APL602J
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Untitled
Abstract: No abstract text available
Text: APL602J 600V 43A 0.125Ω LINEAR MOSFET S S Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . 27 2 T- D G SO "UL Recognized" ISOTOP • Higher FBSOA
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APL602J
OT-227
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APL602J
Abstract: ISOTOP 480V
Text: APL602J 600V 43A 0.125Ω LINEAR MOSFET S S Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . 27 2 T- D G SO "UL Recognized" ISOTOP • Higher FBSOA
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APL602J
OT-227
APL602J
ISOTOP
480V
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43a 504
Abstract: 17550 APT53F80J MIC4452
Text: APT53F80J 800V, 53A, 0.13Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT53F80J
470ns
43a 504
17550
APT53F80J
MIC4452
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APT58M80J
Abstract: MIC4452
Text: APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT58M80J
E145592
APT58M80J
MIC4452
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43A510
Abstract: No abstract text available
Text: APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT58M80J
E145592
APT58M80J
OT-227
43A510
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Untitled
Abstract: No abstract text available
Text: APT53F80J 800V, 57A, 0.11Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT53F80J
470ns
OT-227
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Untitled
Abstract: No abstract text available
Text: APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT58M80J
E145592
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APT58M80J
Abstract: MIC4452 V1660
Text: APT58M80J 800V, 58A, 0.11Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT58M80J
E145592
APT58M80J
MIC4452
V1660
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APT53F80J
Abstract: MIC4452 J1-80
Text: APT53F80J 800V, 57A, 0.11Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT53F80J
470ns
APT53F80J
MIC4452
J1-80
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43a 504 pcb mounted
Abstract: 43a 504 m 60 n 03 g10 AN-994
Text: IRF2807S/IRF2807L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
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IRF2807S/IRF2807L
43a 504 pcb mounted
43a 504
m 60 n 03 g10
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 95945 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF2807SPbF IRF2807LPbF l HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ
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IRF2807SPbF
IRF2807LPbF
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!
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IRF1010NSPbF
IRF1010NLPbF
EIA-418.
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marking code 43a
Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
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91372B
IRF1010NS/L
IRF1010NS)
IRF1010NL)
packag10)
marking code 43a
43A MARKING CODE
IRF1010NS
AN-994
IRF1010N
IRF1010NL
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AN-994
Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A Description
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91372B
IRF1010NS/L
IRF1010NS)
IRF1010NL)
AN-994
IRF1010N
IRF1010NL
IRF1010NS
to262 pcb footprint
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TMPZ84
Abstract: TMPZ84C40
Text: TO SH IBA TMPZ84C40A/41A/42A/43A/44A TMPZ84C40AP-6 / 41AP-6 / 42AP-6 / 43AF-6 / 44AT-6 TMPZ84C40AM-6 /41AM-6 / 42AM-6 TMPZ84C40AP-8 / 41AP-8 / 42AP-8 TLCS-Z80 SIO: SERIAL INPUT/OUTPUT CONTROLLER 1. GENERAL DESCRIPTION AND FEATURES The TMPZ84C40A SIO/O , TMPZ84C41A (SIO/1), TMPZ84C42A (SIO/2),
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TMPZ84C40A/41A/42A/43A/44A
TMPZ84C40AP-6
41AP-6
42AP-6
43AF-6
44AT-6
TMPZ84C40AM-6
/41AM-6
42AM-6
TMPZ84C40AP-8
TMPZ84
TMPZ84C40
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2
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APT5012JNU2
5012JNU2
OT-227
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd
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APT5012JNU3
5012JNU3
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c 503 K
Abstract: lg ds 325
Text: A dvanced P o w er Te c h n o lo g y APT5012JNU3 500V 43A 0.120 ISOTOP* Single Die M O S F E T and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified.
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APT5012JNU3
5012JNU3
OT-227
c 503 K
lg ds 325
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APT5012JNU2
Abstract: tl3060 rrmk 1
Text: A dvanced P o w er Te c h n o l o g y APT5012JNU2 500V 43A 0.12Í2 ISOTOP® PO W ER MOS IV N -C H A N N E L ENHANCEM ENT M ODE HIGH VOLTAGE POW ER M OSFETS MAXIMUM RATINGS Symbol V D SS All Ratings: T c = 25°C unless otherwise specified. Parameter UNIT
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APT5012JNU2
5012JWU2
OT-227
APT5012JNU2
tl3060
rrmk 1
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