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    43670 Price and Stock

    Gelmec 0510436-70-10

    Sorbothane disc, 70 Shore 00, 1
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    Phoenix Contact 1436709

    CONN INSERT SHELL PANEL MNT
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    DigiKey 1436709 Bulk 19 1
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    Sager 1436709 408 1
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    Molex 0639043670

    TOOL KIT
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    Weidmüller Interface GmbH & Co. KG 1943670000

    TERM BLOCK PLUG 11POS STR 5.08MM
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    DigiKey 1943670000 Box 1
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    Avnet Americas 1943670000 30
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    pSemi PE43670A-Z

    50 7BIT 31.75DB 0.25DB DIGITAL S
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    DigiKey PE43670A-Z Reel 3,000
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    Find more 43670 price and stock on Findchips.com

    43670 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Siddarth Sundaresana, Charles Sturdevant, Madhuri Marripelly, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author


    Original     		PDF DEAR0000112)

    1N8024-GA SPICE

    Abstract: No abstract text available
    Text: 1N8024-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8024-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8024-GA 1N8024-GA. 05-SEP-2013 1N8024-GA 1N8024 TEMP-24) 88E-18 1N8024-GA SPICE

    1N8031-GA SPICE

    Abstract: PIN diode SPICE model
    Text: 1N8031-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8031-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8031-GA 1N8031-GA. 05-SEP-2013 1N8031-GA 1N8031 57E-18 1N8031-GA SPICE PIN diode SPICE model

    Untitled

    Abstract: No abstract text available
    Text: Rapidly Maturing SiC Junction Transistors Featuring Current Gain β > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation S.G. Sundaresan, S. Jeliazkov, B. Grummel, R. Singh GeneSiC Semiconductor, Inc. 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA


    Original     		PDF

    1N8034-GA SPICE

    Abstract: No abstract text available
    Text: 1N8034-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8034-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8034-GA 1N8034-GA 05-SEP-2013 1N8034 46E-17 00E-05 26E-09 1N8034-GA SPICE

    Untitled

    Abstract: No abstract text available
    Text: 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Ranbir Singha,*, Stoyan Jeliazkov and Eric Lieser GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a ranbir.singh@genesicsemi.com, *corresponding author


    Original     		PDF N00014-C-10-0104,

    1N8026-GA SPICE

    Abstract: No abstract text available
    Text: 1N8026-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8026-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8026-GA 1N8026-GA. 05-SEP-2013 1N8026-GA 1N8026 TEMP-24) 45E-15 1N8026-GA SPICE

    anode gate thyristor

    Abstract: No abstract text available
    Text: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author


    Original     		PDF 5x1014 1x107 DEAR0000112) anode gate thyristor

    1N8028-GA SPICE

    Abstract: No abstract text available
    Text: 1N8028-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8028-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8028-GA 1N8028-GA. 05-SEP-2013 1N8028-GA 1N8028 74E-13 1N8028-GA SPICE

    GA01PNS100-CAL SPICE

    Abstract: No abstract text available
    Text: GA01PNS100-CAL SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS100-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF GA01PNS100-CAL 05-SEP-2013 GA01PNS100-CAL GA01PNS100 00E-25 28E-11 00E-03 GA01PNS100-CAL SPICE

    GA01PNS100-CAU SPICE

    Abstract: No abstract text available
    Text: GA01PNS100-CAU SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS100-CAU device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF GA01PNS100-CAU 05-SEP-2013 GA01PNS100-CAL GA01PNS100 00E-25 28E-11 00E-03 GA01PNS100-CAU GA01PNS100-CAU SPICE

    1N8035-GA SPICE

    Abstract: No abstract text available
    Text: 1N8035-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8035-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8035-GA 1N8035-GA 05-SEP-2013 1N8035 46E-17 00E-05 26E-09 1N8035-GA SPICE

    1N8030-GA SPICE

    Abstract: No abstract text available
    Text: 1N8030-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8030-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8030-GA 1N8030-GA. 05-SEP-2013 1N8030-GA 1N8030 57E-18 1N8030-GA SPICE

    Untitled

    Abstract: No abstract text available
    Text: Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Siddarth Sundaresan, Brian Grummel and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Place, Suite 155, Dulles VA 20166, U.S.A. ABSTRACT Electrical performance and reliability of SiC Junction Transistors SJTs and Schottky


    Original     		PDF

    thyristor lifetime

    Abstract: No abstract text available
    Text: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: ranbir.singh@genesicsemi.com; Phone: 703-996-8200x105.


    Original     		PDF 703-996-8200x105. DE-FG0207ER84712, thyristor lifetime

    Untitled

    Abstract: No abstract text available
    Text: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.


    Original     		PDF DE-FG02-07ER84712)

    1N8033-GA SPICE

    Abstract: No abstract text available
    Text: 1N8033-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8033-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8033-GA 1N8033-GA 05-SEP-2013 1N8033 99E-17 87E-05 38E-10 1N8033-GA SPICE

    Untitled

    Abstract: No abstract text available
    Text: Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses S.G. Sundaresana,*, C. Sturdevant, H. Issa, M. Marripelly, E. Lieser and R. Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA.


    Original     		PDF GA100XCP12

    1N8032-GA SPICE

    Abstract: No abstract text available
    Text: 1N8032-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8032-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8032-GA 1N8032-GA 05-SEP-2013 1N8032 99E-17 87E-05 38E-10 1N8032-GA SPICE

    2CSC400002D0903

    Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
    Text: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente


    Original     		PDF 2CSC400002D0903 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284

    Untitled

    Abstract: No abstract text available
    Text: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor


    Original     		PDF GA040TH65 OT-227

    Untitled

    Abstract: No abstract text available
    Text: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor


    Original     		PDF GA060TH65 OT-227

    GA20JT06-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: GA20JT06-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA20JT06-CAL.


    Original     		PDF GA20JT06-CAL sic/baredie/sjt/GA20JT06-CAL GA20JT06-CAL. 27-FEB-2014 GA20JT06 00E-47 26E-28 2281E-10 33957E-9 20E-03 GA20JT06-CAL SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: GB02SHT01-46 High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 100 V Schottky rectifier 225 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF GB02SHT01-46 Mil-PRF-19500 GB02SHT01 57E-18 40E-05 12E-11 00E-10 00E-03