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    4350B Search Results

    4350B Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    79RC32H434-350BCGI Renesas Electronics Corporation Integrated Communications Processor Visit Renesas Electronics Corporation
    79RC32H434-350BCI Renesas Electronics Corporation Integrated Communications Processor Visit Renesas Electronics Corporation
    79RC32H434-350BC Renesas Electronics Corporation Integrated Communications Processor Visit Renesas Electronics Corporation
    79RC32H434-350BCG Renesas Electronics Corporation Integrated Communications Processor Visit Renesas Electronics Corporation
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    4350B Price and Stock

    Analog Devices Inc ADF4350BCPZ-RL

    IC FANOUT DIST 32LFCSP
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    DigiKey ADF4350BCPZ-RL Reel 5,000 5,000
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    Mouser Electronics ADF4350BCPZ-RL
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    Bristol Electronics ADF4350BCPZ-RL 5,000
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    Win Source Electronics ADF4350BCPZ-RL 5,880
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    Analog Devices Inc ADF4350BCPZ-RL7

    IC FANOUT DIST 32LFCSP
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    DigiKey ADF4350BCPZ-RL7 Digi-Reel 480 1
    • 1 $19.48
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    • 100 $11.2429
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    ADF4350BCPZ-RL7 Cut Tape 480 1
    • 1 $19.48
    • 10 $14.142
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    ADF4350BCPZ-RL7 Reel 1,500
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    Mouser Electronics ADF4350BCPZ-RL7 2,253
    • 1 $18.88
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    • 100 $11.25
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    Newark ADF4350BCPZ-RL7 Cut Tape 559 1
    • 1 $17.39
    • 10 $15.98
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    Analog Devices Inc ADF4350BCPZ-RL7 94 1
    • 1 $19.48
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    Ameya Holding Limited ADF4350BCPZ-RL7 3,000
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    Richardson RFPD ADF4350BCPZ-RL7 1,500
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    Chip 1 Exchange ADF4350BCPZ-RL7 250
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    Win Source Electronics ADF4350BCPZ-RL7 5,966
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    Analog Devices Inc ADF4350BCPZ

    IC FANOUT DIST 32LFCSP
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    DigiKey ADF4350BCPZ Tray 107 1
    • 1 $19.67
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    Mouser Electronics ADF4350BCPZ 691
    • 1 $18.33
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    Newark ADF4350BCPZ Bulk 15 1
    • 1 $18.33
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    Analog Devices Inc ADF4350BCPZ 22
    • 1 $19.67
    • 10 $14.283
    • 100 $12.8996
    • 1000 $7.77
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    Bristol Electronics ADF4350BCPZ 17
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    ADF4350BCPZ 5
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    TME ADF4350BCPZ 1
    • 1 $16.5
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    Richardson RFPD ADF4350BCPZ 533 1
    • 1 $12.3
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    Win Source Electronics ADF4350BCPZ 5,988
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    Brady Worldwide Inc 4350-B

    B915 4350-B BLK/ORG STYLE B
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    DigiKey 4350-B Bulk 1
    • 1 $9.14
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    Newark 4350-B Bulk 1
    • 1 $7.99
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    VPG Transducers Y07852R64350B9L

    RES 2.6435 OHM 0.6W 0.1% RADIAL
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    DigiKey Y07852R64350B9L Bulk 25
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    Avnet Americas Y07852R64350B9L Bulk 25
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    Find more 4350B price and stock on Findchips.com

    4350B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4350-B Brady Worldwide B915 4350-B BLK/ORG STYLE B Original PDF

    4350B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TQP3M9035

    Abstract: 4450F 4450F rogers 0 DFN triquint 2x2 dfn
    Text: TQP3M9035 High Linearity LNA Gain Block Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 2x2mm 8-lead DFN plastic package Product Features • •   • • • •


    Original     		PDF TQP3M9035 TQP3M9035 4450F 4450F rogers 0 DFN triquint 2x2 dfn

    FR4 Prepreg

    Abstract: FR4 Prepreg for RF 06 layer PCB S2254 S2528
    Text: DATA SHEET SKY67002-396LF: 1.6-2.1 GHz High Linearity, Active Bias Low-Noise Amplifier Applications • GSM, CDMA, WCDMA, TD-SCDMA cellular infrastructure • Ultra low-noise systems • Balanced, single-ended low-noise amplifier designs RF_IN Features VBIAS


    Original     		PDF SKY67002-396LF: J-STD-020) 201442B FR4 Prepreg FR4 Prepreg for RF 06 layer PCB S2254 S2528

    Untitled

    Abstract: No abstract text available
    Text: TQL9048 High Linearity Gain Block with Shutdown Applications • • • • • Repeaters Mobile Infrastructure Defense Communications General Purpose Wireless TDD or FDD systems 8 pin 2x2 mm DFN Package Product Features • • • • • • • Functional Block Diagram


    Original     		PDF TQL9048 TQL9048

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY67150-396LF: 300 to 2200 MHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  UHF and L-band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C


    Original     		PDF SKY67150-396LF: J-STD-020) 202922F

    201805A

    Abstract: Kamaya RMC Rogers 4350B SKY67130 201805 Rogers 4350B substrate
    Text: DATA SHEET SKY67130-396LF: 0.7-2.7 GHz High Linearity Amplifier Driver Applications • LTE, CDMA, WCDMA, and TD-SCDMA cellular infrastructures • Linear amplifier systems that require high OIP3 with extremely low current • Ideal for 2.7 to 5.0 V WLAN driver PAs and cellular repeater


    Original     		PDF SKY67130-396LF: J-STD-020) SKY67130-396LF 01805A 201805A Kamaya RMC Rogers 4350B SKY67130 201805 Rogers 4350B substrate

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY67153-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C


    Original     		PDF SKY67153-396LF: S3502 SKY67153-396LF 202887D

    RRUS 32

    Abstract: No abstract text available
    Text: DATA SHEET SKY67151-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C


    Original     		PDF SKY67151-396LF: S2241a SKY67151-396LF 202390E RRUS 32

    Untitled

    Abstract: No abstract text available
    Text: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.


    Original     		PDF BLF8G20LS-160V

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE64905 UltraCMOS Digitally Tunable Capacitor DTC 100 - 3000 MHz Product Description The PE64905 is a DuNE -enhanced Digitally Tunable Capacitor (DTC) based on Peregrine’s UltraCMOS® technology. DTC products provide a monolithically


    Original     		PDF PE64905 PE64905

    UT-141C-25-TP

    Abstract: BLF6G13L-250P 200B 4350B 800B UT-141C-35-TP 250WF
    Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 2 — 21 March 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.


    Original     		PDF BLF6G13L-250P; BLF6G13LS-250P BLF6G13L-250P 6G13LS-250P UT-141C-25-TP 200B 4350B 800B UT-141C-35-TP 250WF

    Rogers 4350B

    Abstract: GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of


    Original     		PDF MW5IC970NBR1 Rogers 4350B GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987

    transistor 502

    Abstract: Rogers 4350B 4350B BLD6G21L-50 BLD6G21LS-50 Doherty amp doherty combiner 2110 transistor BLD6G22L-150BN/2 BLD6G22LS-50,112
    Text: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 02 — 18 March 2010 Objective data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using


    Original     		PDF BLD6G22L-50; BLD6G22LS-50 BLD6G22L-50 BLD22LS-50 BLD6G22LS-50 transistor 502 Rogers 4350B 4350B BLD6G21L-50 BLD6G21LS-50 Doherty amp doherty combiner 2110 transistor BLD6G22L-150BN/2 BLD6G22LS-50,112

    Aeroflex Detectors

    Abstract: No abstract text available
    Text: Sampling Phase Detectors MSPD1011,MSPD1012,MSPD1013 Series Data Sheet Features • Operating Frequency: 10 MHz to 20 GHz • Surface mount package: 3.3 mm L x 2.8 mm (W) x 1.5 mm (H) • RoHS Compliant Applications • Phase locked loops • High frequency sampling


    Original     		PDF MSPD1011 MSPD1012 MSPD1013 MSPD101x-121 Aeroflex Detectors

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


    Original     		PDF BLF2425M7L140; BLF2425M7LS140 BLF2425M7L140 BLF2425M7LS140

    600S3R9BT

    Abstract: GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 1, 5/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of


    Original     		PDF MW5IC970NBR1 600S3R9BT GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: MMA-174321-R4 17-43GHz, 0.1W Gain Block Data Sheet October, 2012 Features: • • • • • • • • Frequency Range: 17 – 43 GHz P1dB: 18 dBm Psat: 20 dBm Gain: 21 dB Vdd =4.5 V 3 V to 5 V Ids = 250 mA (150mA to 300mA) Input and Output Fully Matched to 50 Ω


    Original     		PDF MMA-174321-R4 17-43GHz, 150mA 300mA) MMA-174321 43GHz 10mil 4350B MMA174321-R4

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC1094LP3E v00.0813 POWER DETECTORS - SMT 50 dB, LOGARITHMIC DETECTOR, 1 - 23 GHz Typical Applications


    Original     		PDF HMC1094LP3E HMC1094LP3E 4350B

    Untitled

    Abstract: No abstract text available
    Text: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution


    Original     		PDF BLD6G21L-50; BLD6G21LS-50 BLD6G21L-50 BLD6G21LS-50

    Untitled

    Abstract: No abstract text available
    Text: AMGP-6432 28-31 GHz 2W SMT Packaged Power Amplifier Data Sheet Description Features The AMGP-6432 is a surface mount packaged 2-Watt power amplifier that operates from frequencies between 28 to 31 GHz. In the operational frequency band from 29.25 to 30 GHz, it provides 33 dBm of typical output


    Original     		PDF AMGP-6432 AMGP-6432 -38dBc 18dBm/ AMGP-6432-BLKG AMGP-6432-TR1G AMGP-6432-TR2G AV02-3203EN

    Untitled

    Abstract: No abstract text available
    Text: AMGP-6432 28-31 GHz 2W SMT Packaged Power Amplifier Data Sheet Description Features The AMGP-6432 is a surface mount packaged 2-Watt power amplifier that operates from frequencies between 28 to 31 GHz. In the operational frequency band from 29.25 to 30 GHz, it provides 33 dBm of typical output


    Original     		PDF AMGP-6432 AMGP-6432 -38dBc 18dBm/ AMGP-6432-BLKG AMGP-6432-TR1G AMGP-6432-TR2G AV02-3203EN

    Untitled

    Abstract: No abstract text available
    Text: BLF8G22LS-140 Power LDMOS transistor Rev. 2 — 10 April 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G22LS-140

    J122 SMD

    Abstract: J122 SMD TRANSISTOR
    Text: BLF8G27LS-100P Power LDMOS transistor Rev. 4 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF8G27LS-100P J122 SMD J122 SMD TRANSISTOR

    Rogers 4350B

    Abstract: ATC600S3R9BT250 ATC600S3R9BT250T GPS2020 AN1955 A113 A114 A115 AN1987 C101
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC970N Rev. 2, 4/2008 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of


    Original     		PDF MW5IC970N MW5IC970NBR1 MW5IC970GNBR1 Rogers 4350B ATC600S3R9BT250 ATC600S3R9BT250T GPS2020 AN1955 A113 A114 A115 AN1987 C101

    models

    Abstract: Rogers 4350B 85052B 4350B 00456 sma connector footprint EF2A51A063E10B hp network analyzer connectors SMA End Launch connectors SMA footprint
    Text: Information on S parameter Files for various component families Purpose: The purpose of this document is to provide related technical information regarding the acquisition of Sparameter data files obtained for various TFT component families. This document also covers a


    Original     		PDF 40GHz 4350B EF2A51A063E10B models Rogers 4350B 85052B 4350B 00456 sma connector footprint EF2A51A063E10B hp network analyzer connectors SMA End Launch connectors SMA footprint