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    434 NPN TRANSISTORS Search Results

    434 NPN TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    434 NPN TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TBD438

    Abstract: BD433 TBD436 TBD437 434 NPN transistors
    Text: BD433, 434, 435, 436, 437, 438 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum


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    BD433, O-126 O-126 TBD433 TBD434 TBD438 BD433 TBD436 TBD437 434 NPN transistors PDF

    PTC6679

    Abstract: No abstract text available
    Text: j M I C R O S E ñ r C O R P/P O üj ER ' r~QB D Ë T j b ï ï S 1SO O DDO 434 3 3-/S- D PTC 6 6 7 9 PTC 6 6 8 0 PTC 6681 POWERMODE III S E R IE S HIGH VOLTAGE NPN TRANSISTORS 30 AMPERES 400 VOLTS FEA TU R ES • • • • High Voltage Rating : V cex = 400 Volts


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    22j23J^ PTC6679 PDF

    BD436

    Abstract: BD433 BD434 BD435 BD437 BD438 bd43
    Text: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in


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    BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 BD436 BD434 BD435 bd43 PDF

    434 NPN transistors

    Abstract: BD435 transistor BD435 BD433 BD434 BD436 BD437 BD438 SGS-THOMSON 435
    Text: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in


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    BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 434 NPN transistors BD435 transistor BD435 BD434 BD436 SGS-THOMSON 435 PDF

    SC08810

    Abstract: B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP
    Text: SGS-THOMSON BD433/5/7 BD434/6/8 iy COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in


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    BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 SC08810 B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP PDF

    Untitled

    Abstract: No abstract text available
    Text: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in


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    BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 PDF

    BD437

    Abstract: 434 NPN transistors BD433 BD434 BD435 BD436 BD438 ic 438
    Text: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications.


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    BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 434 NPN transistors BD434 BD435 BD436 ic 438 PDF

    bo434

    Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
    Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages


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    00043bfl BD434 BD440 BD442 BD441. t25mn 434/BD 436/BD 023SbOS G00437H bo434 b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202 PDF

    power transistor mrc 438

    Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
    Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase


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    23SbQS 0Q043bfl BD434 BD440 BD442 434/BD 436/BD BD434. BD438. fl23SbO power transistor mrc 438 mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439 PDF

    Untitled

    Abstract: No abstract text available
    Text: r r 7 SGS-THOMSON Ä 7 # RaoeifäOlILIßra «! BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec


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    BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 PDF

    transistor d325

    Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
    Text: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector


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    053SbOS 00043L3 433/BD 435/BD 437/BD 439/BD 441/BD fl23Sfc ---0436r BD433. transistor d325 TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285 PDF

    BD NPN transistors

    Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
    Text: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710


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    O-126 BD NPN transistors BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD433, BD435, BD437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM rr 7.8 B 10.5 10.8


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    BD433, BD435, BD437 BD434, BD436, BD438 00121D PDF

    Untitled

    Abstract: No abstract text available
    Text: BD433, BD435, BD437 BD434, BD436, BD438 BD433, 435, 437 BD434,436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 - rr I_ DIM & MAX. A 7,4


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    BD433, BD435, BD437 BD434, BD436, BD438 BD434 PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    tfk 434

    Abstract: tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A
    Text: BD 433 *BD 435 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannungen speziell für Autoradiobetrieb • Hohe Stromverstärkung


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    BD433, tfk 434 tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A PDF

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


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    BFU590G OT223 BFU590G AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


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    BFU590Q BFU590Q AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general


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    BDS643/645/647/649/651 -SOT223 OT223, BDS644/646/648/650/652. bbS3T31 0034bt bbS3T31 0034bl0 DQ34bll PDF

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


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    BFU590Q BFU590Q AEC-Q101 BFU590QX PDF

    Untitled

    Abstract: No abstract text available
    Text: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium


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    BFU520Y OT363 BFU520Y AEC-Q101 PDF

    BU25150X

    Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
    Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387


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    BU505 BU505D BU505DF BU505F BU506 BU506D BU506DF BU506F BU508AF BU508AW BU25150X BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX PDF

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


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    BFU590G OT223 BFU590G AEC-Q101 BFU590GX PDF