Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SPD25D28 TECHNICAL DATA DATASHEET 4310, Rev- DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a 25 Amp microcontroller-based Solid State Relay designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated
|
Original
|
PDF
|
SPD25D28
MIL-STD-1275B,
MIL-STD-704F
MIL-STD-217F,
Vehicles-4/20/04
|
sspc
Abstract: relay aircraft 25A 28V MIL-STD-1275B MIL-W-5088L 217F SN74LVC3G14 14-GAUGE 28V generator aerospace
Text: SENSITRON SEMICONDUCTOR SPD25D28NT TECHNICAL DATA DATASHEET 4310, Rev D DC Solid State Power Controller Module Description: This Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated up to 25A, designed to be used in 28V DC applications. This module has integrated current sensing with no
|
Original
|
PDF
|
SPD25D28NT
MIL-STD-1275B,
MIL-STD-704F
MIL-STD-217F,
Vehicles-4/20/04
sspc
relay aircraft 25A 28V
MIL-STD-1275B
MIL-W-5088L
217F
SN74LVC3G14
14-GAUGE
28V generator aerospace
|
MIL-W-5088L
Abstract: sspc 4310 MOSFET SPD25D28 *4310
Text: SENSITRON SEMICONDUCTOR SPD25D28 TECHNICAL DATA DATASHEET 4310, Rev- DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a 25 Amp microcontroller-based Solid State Relay designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated
|
Original
|
PDF
|
SPD25D28
MIL-STD-1275B,
MIL-STD-704F
MIL-STD-217F,
Vehicles-4/20/04
MIL-W-5088L
sspc
4310 MOSFET
SPD25D28
*4310
|
DIODE i2t
Abstract: 450W Mosfet Module
Text: SENSITRON SEMICONDUCTOR SPDXXD28 SERIES TECHNICAL DATA DATASHEET 4310, Rev C DC Solid State Power Controller Module Description: These Solid State Power Controller SSPC Modules are microcontroller-based Solid State Relays rated up to 25A designed to be used in Army, Air force and Navy in 28V DC applications. These modules have
|
Original
|
PDF
|
SPDXXD28
SPD5D28:
SPD12D28:
SPD25D28:
DIODE i2t
450W Mosfet Module
|
SPD25D28NT
Abstract: sspc 217F t4 switch 5 pin relay 28vdc drawing circuit diagram of relay 8 pin MIL-W-5088L MIL-STD-1275B 450W Mosfet Module
Text: SENSITRON SEMICONDUCTOR SPD25D28NT TECHNICAL DATA DATASHEET 4310, Rev D.1 DC Solid State Power Controller Module Description: This Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated up to 25A, designed to be used in 28V DC applications. This module has integrated current sensing with no
|
Original
|
PDF
|
SPD25D28NT
MIL-STD-1275B,
MIL-STD-704F
MIL-STD-217F,
Vehicles-4/20/04
SPD25D28NT
sspc
217F
t4 switch
5 pin relay 28vdc drawing
circuit diagram of relay 8 pin
MIL-W-5088L
MIL-STD-1275B
450W Mosfet Module
|
relay aircraft 20A 28V
Abstract: SPD25D28 SPD5D28-1 SPD5D28-3 SPD5D28-5 SPDXXD28 relay aircraft 25A 28V
Text: SENSITRON SEMICONDUCTOR SPDXXD28 SERIES TECHNICAL DATA DATASHEET 4310, Rev B DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated upto 25A designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated
|
Original
|
PDF
|
SPDXXD28
SPD5D28
SPD5D28-1:
SPD5D28-3:
SPD5D28-5:
SPD15D28
SPD14D28-7:
SPD14D28-10:
SPD14D28eet
relay aircraft 20A 28V
SPD25D28
SPD5D28-1
SPD5D28-3
SPD5D28-5
relay aircraft 25A 28V
|
EN4310
Abstract: AX-9832 2SK1921
Text: Ordering number:EN4310 N-Channel Silicon MOSFET 2SK1921 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2052C [2SK1921] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7
|
Original
|
PDF
|
EN4310
2SK1921
2052C
2SK1921]
O-220AB
EN4310
AX-9832
2SK1921
|
car mosfet audio amplifier diagram
Abstract: mosfet HF amplifier TDA car audio amplifier AM FM TUNER module car Car electronics 5.1 amplifier circuits tda audio amplifier 4320X 4310 SMD IC tetrode smd
Text: TUA 4310XS / TDA 4320X CAR RADIO Enclosure: figure 1 figure 2 figure 3 figure 4 figure 5 block circuitrys of the ICs schematic diagram of the demoboard partlist for the FM module SO-SMD partside of the pcb partside of the pcb measurement diagrams Integrated Circuits for Consumer Electronics
|
Original
|
PDF
|
4310XS
4320X
car mosfet audio amplifier diagram
mosfet HF amplifier
TDA car audio amplifier
AM FM TUNER module car
Car electronics
5.1 amplifier circuits
tda audio amplifier
4320X
4310 SMD IC
tetrode smd
|
ir 4310
Abstract: irf7832pbf mj 4310 4310 MOSFET
Text: PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance
|
Original
|
PDF
|
5016A
IRF7832PbF
EIA-481
EIA-541.
ir 4310
irf7832pbf
mj 4310
4310 MOSFET
|
IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)
|
Original
|
PDF
|
OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRGKI165F06
IRGDDN600M06
IRGDDN600K06
IRF7311
IRGNIN075
IRFK6H054
IRF7601
IRLI2203N
IRLML2803
IRLML5103
|
FDA24N50F
Abstract: No abstract text available
Text: UniFETTM FDA24N50F N-Channel MOSFET 500V, 24A, 0.2 Features Description • RDS on = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FDA24N50F
FDA24N50F
|
4311 mosfet transistor
Abstract: transistor tl 4311 IRFP140 TA17421 TB334
Text: IRFP140 Data Sheet July 1999 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
|
Original
|
PDF
|
IRFP140
TA17421.
4311 mosfet transistor
transistor tl 4311
IRFP140
TA17421
TB334
|
fda24n50f
Abstract: A1872 ir 4310
Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FDA24N50F
FDA24N50F
A1872
ir 4310
|
Untitled
Abstract: No abstract text available
Text: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V
|
Original
|
PDF
|
7205A
IRF3805S-7PPbF
IRF3805L-7PPbF
IRF3805S/L-7PPbF
O-263CA
|
|
|
Irf 1540 N
Abstract: Irf 1540 G MOSFET IRF 1540 IRF3805S-7P IRF 4310 AN-994 L0043 IRF3805S mj 4310
Text: PD - 96904 AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ G ID = 160A
|
Original
|
PDF
|
IRF3805S-7P
Irf 1540 N
Irf 1540 G
MOSFET IRF 1540
IRF3805S-7P
IRF 4310
AN-994
L0043
IRF3805S
mj 4310
|
IRF 4310
Abstract: IRF3805S-7P mj 4310 AN-994 IRF3805S L0043
Text: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ G ID = 160A
|
Original
|
PDF
|
6904A
IRF3805S-7P
IRF 4310
IRF3805S-7P
mj 4310
AN-994
IRF3805S
L0043
|
irf3805s
Abstract: AN-994 mj 4310 L0043 irf3805l-7p IRF3805L IRF3805L-7PPBF IRF3805S-7P
Text: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V
|
Original
|
PDF
|
7205A
IRF3805S-7PPbF
IRF3805L-7PPbF
IRF3805S/L-7PPbF
O-263CA
irf3805s
AN-994
mj 4310
L0043
irf3805l-7p
IRF3805L
IRF3805L-7PPBF
IRF3805S-7P
|
Untitled
Abstract: No abstract text available
Text: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ G S
|
Original
|
PDF
|
6904A
IRF3805S-7P
|
FDA24N50F
Abstract: mj 4310
Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
PDF
|
FDA24N50F
FDA24N50F
mj 4310
|
IRF 4310
Abstract: irf7832
Text: PD - 94594E IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance
|
Original
|
PDF
|
94594E
IRF7832
EIA-481
EIA-541.
IRF 4310
irf7832
|
IRF7832
Abstract: No abstract text available
Text: PD - 94594C IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance
|
Original
|
PDF
|
94594C
IRF7832
EIA-481
EIA-541.
IRF7832
|
Untitled
Abstract: No abstract text available
Text: IRFP140 S em iconductor D ata S h eet Ju ly 1999 31 A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
OCR Scan
|
PDF
|
IRFP140
O-247
|
IRF 4310
Abstract: ir 4310 IRF621R
Text: J2 H A R R IS IR F 620/621/6 2 2 /6 2 3 IR F620R /621R /622R /623R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B TOP VIEW • 4.0A and 5.0A, 1S0V - 200V • •-D S o n = 0 . 8 0 a n d 1 . 2 f l DRAIN (FLANGE)
|
OCR Scan
|
PDF
|
F620R
/621R
/622R
/623R
IRF620,
IRF621,
IRF622,
IRF623
IRF620R,
IRF621R,
IRF 4310
ir 4310
IRF621R
|
1RF620
Abstract: No abstract text available
Text: • 4302571 0054013 HARRIS lib ■ HAS IR F 620/6 21/6 2 2/6 2 3 IRF62 OR/621R /622R /623R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B • 4.0A and 5.0A, 150V - 200V T O P VIE W • fDS on = O.Bii and 1.20 • Single Pulse Avalanche Energy Rated*
|
OCR Scan
|
PDF
|
IRF62
OR/621R
/622R
/623R
IRF620,
IRF621,
IRF622,
IRF623
IRF620R,
IRF621R,
1RF620
|
