Q62702-G0057
Abstract: BGA 64 PACKAGE thermal resistance
Text: BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data 3 • Cascadable 50 Ω-gain block 4 • Unconditionally stable • Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA • Noise figure NF = 2.2 dB at 1.8 GHz
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25-Technologie
VPS05605
EHA07385
Q62702-G0057
OT-343
Jul-13-1998
Q62702-G0057
BGA 64 PACKAGE thermal resistance
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INFINEON marking BGA
Abstract: 420 transistor
Text: BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21 |2 = 13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.4 mA Noise figure NF = 2.2 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
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25-Technologie
VPS05605
EHA07385
OT-343
Oct-12-1999
INFINEON marking BGA
420 transistor
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Untitled
Abstract: No abstract text available
Text: Advance Product Information September 14, 2006 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive
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TGA4509-SM
800mA
TGA4509-SM
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BR 8050
Abstract: BFP420 application notes SOT343 marking 0 mmic t502 6 CHIP T502 P 414 rf transistor s-parameter RF POWER TRANSISTOR NPN BR 8050 D CHIP T502 S BGB420
Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001
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BGB420,
D-81541
BGB420
BGB420
BFP420.
GPS05605
BR 8050
BFP420 application notes
SOT343 marking 0 mmic
t502 6
CHIP T502 P
414 rf transistor
s-parameter RF POWER TRANSISTOR NPN
BR 8050 D
CHIP T502 S
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BFP420 application notes
Abstract: BFP420 BGB420 bgb420 application note GPS05605 GMA marking RF NPN power transistor 2.5GHz
Text: BGB420, Nov. 2000 BGB 420 Active Biased Transistor MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-11-28 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2000.
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BGB420,
D-81541
BGB420
BGB420
BFP420.
GPS05605
BFP420 application notes
BFP420
bgb420 application note
GPS05605
GMA marking
RF NPN power transistor 2.5GHz
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CHIP T502 S
Abstract: JS 08321 BR 8050 CHIP T502 P BFP420 BGB420 GPS05605 T502 RF Transistor s-parameter s-parameter RF POWER TRANSISTOR NPN
Text: BGB420, Aug. 2001 BGB 420 Active Biased Transistor MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon Technologies AG 2001
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BGB420,
D-81541
BGB420
BGB420
BFP420.
GPS05605
CHIP T502 S
JS 08321
BR 8050
CHIP T502 P
BFP420
GPS05605
T502
RF Transistor s-parameter
s-parameter RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 16, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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TGA4509-SM
800mA
TGA4509-SM
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gsm vco
Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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EHT09097
EHT09123
EHT09124
gsm vco
bfr93aw schematic
gsm 900 amplifier
k 3531 transistor
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Untitled
Abstract: No abstract text available
Text: Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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TGA4509-SM
800mA
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GSM vco
Abstract: gsm 900 amplifier BFP420 Transistor BFR 98 BAS40-04 BFR93AW LQG21N Dual Band Power Amplifier 1 Schematic of the CGY K 3264 transistor IC210
Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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EHT09097
EHT09123
EHT09124
GSM vco
gsm 900 amplifier
BFP420
Transistor BFR 98
BAS40-04
BFR93AW
LQG21N
Dual Band Power Amplifier 1 Schematic of the CGY
K 3264 transistor
IC210
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TGA1073B-SCC
Abstract: No abstract text available
Text: Product Datasheet February 13, 2001 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA
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TGA1073B-SCC
TGA1073B-SCC
TGA1073B
0007-inch
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Untitled
Abstract: No abstract text available
Text: Product Datasheet January 17, 2005 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA
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TGA1073B-SCC
TGA1073B-SCC
TGA1073B
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information March 24, 2008 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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TGA4509-SM
800mA
TGA4509-SM
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Untitled
Abstract: No abstract text available
Text: Advance Product Information April 25, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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TGA4509-SM
800mA
TGA4509-SM
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TGA1073B
Abstract: TGA1073B-SCC
Text: Product Datasheet January 17, 2005 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA
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TGA1073B-SCC
TGA1073B-SCC
TGA1073B
0007-inch
TGA1073B
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 14, 2008 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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TGA4509-SM
800mA
TGA4509-SM
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Untitled
Abstract: No abstract text available
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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TGA4509-SM
800mA
TGA4509-SM
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MA 2831
Abstract: RO4003 TGA4509-SM
Text: Advance Product Information November 11, 2005 Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 19 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads
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TGA4509-SM
800mA
420mA
MA 2831
RO4003
TGA4509-SM
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MA 2831
Abstract: No abstract text available
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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TGA4509-SM
800mA
TGA4509-SM
MA 2831
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MA 2831
Abstract: No abstract text available
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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TGA4509-SM
800mA
TGA4509-SM
MA 2831
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MA 2831
Abstract: MMIC code 420 ESD 141 RO4003 TGA4509-SM ka-band amplifier
Text: Ka-Band Packaged 1W PA TGA4509-SM Key Features • • • • • • Frequency Range: 28-31 GHz 30 dBm Nominal P1dB 22 dB Nominal Gain Bias Conditions: Vd = 6 V, Idq_tot = 420 mA Id = 800mA under RF drive Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 1.2 mm
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TGA4509-SM
800mA
TGA4509-SM
420mA
MA 2831
MMIC code 420
ESD 141
RO4003
ka-band amplifier
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SIEMENS bga
Abstract: mje 346 siemens transistor
Text: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz VD = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz
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25-Technologie
Q62702-G0057
OT-343
de/Semiconductor/products/35/35
SIEMENS bga
mje 346
siemens transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz \/D = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz
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25-Technologie
Q62702-G0057
OT-343
015551b
IS21I2
D1EEE17
fl23Sb05
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IH33
Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Text: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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