FPN630
Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
Text: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol
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FPN630
FPN630A
FPN630
O-226
FPN630A
PN2222N
CBVK741B019
F63TNR
TO-226-AE
D26Z
weig
S0480
226AE
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Untitled
Abstract: No abstract text available
Text: TN6714A / NZT6714 TN6714A NZT6714 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings*
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TN6714A
NZT6714
TN6714A
O-226
OT-223
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transistor TD-100 le
Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
Text: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*
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TN3019A
O-226
transistor TD-100 le
pn222
CBVK741B019
F63TNR
PN2222N
TN3019A
ad label information on the box
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CBVK741B019
Abstract: F63TNR PN2222N TN4033A
Text: TN4033A TN4033A C TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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TN4033A
O-226
CBVK741B019
F63TNR
PN2222N
TN4033A
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C461B
Abstract: D1162 B11B6
Text: 11 11111111 1 1 111111111111111111111111111111234567894A1 1 1 BCDEFC1 2 12121 1 1 21345164789AB1C9DABE1F112111 1 1!3 1 " 1 21F3FE1 1 1 1 F1!"#8$1 2 12A# 1C$$% &1% ' % 1D%* % 1
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111111111111111111111111111111234567894A1
21345164789AB1C9DABE1F
DA7B2011
97214C12
19D11
-1C98B1
971CB911
81CB911
-1C98B1B2,
C461B
D1162
B11B6
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2N7051
Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705
Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*
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2N7053
NZT7053
O-226
OT-223
2N7051
2N7053
CBVK741B019
F63TNR
NZT7053
PN2222N
S4-70
2N705
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CBVK741B019
Abstract: F63TNR FPN530 FPN530A PN2222N TO-226-AE 226AE
Text: FPN530 / FPN530A FPN530 FPN530A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol
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FPN530
FPN530A
FPN530
O-226
CBVK741B019
F63TNR
FPN530A
PN2222N
TO-226-AE
226AE
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CBVK741B019
Abstract: F63TNR NZT6728 PN2222N TN6728A
Text: TN6728A / NZT6728 TN6728A NZT6728 C E E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings*
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TN6728A
NZT6728
TN6728A
O-226
OT-223
CBVK741B019
F63TNR
NZT6728
PN2222N
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Untitled
Abstract: No abstract text available
Text: TN6717A / NZT6717 NZT6717 TN6717A C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39. Absolute Maximum Ratings*
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TN6717A
NZT6717
TN6717A
O-226
OT-223
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Untitled
Abstract: No abstract text available
Text: TN6729A / NZT6729 TN6729A NZT6729 C E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings*
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TN6729A
NZT6729
TN6729A
O-226
OT-223
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TIC 1160
Abstract: CBVK741B019 F63TNR MPSW3725 PN2222N MHz-400
Text: MPSW3725 MPSW3725 C TO-226 B E NPN Transistor This device is designed for high current, low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage
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MPSW3725
O-226
TIC 1160
CBVK741B019
F63TNR
MPSW3725
PN2222N
MHz-400
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inter mediate
Abstract: CBVK741B019 F63TNR NZT6714 PN2222N TN6714A tic 223 V10400
Text: TN6714A / NZT6714 TN6714A NZT6714 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings*
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TN6714A
NZT6714
TN6714A
O-226
OT-223
inter mediate
CBVK741B019
F63TNR
NZT6714
PN2222N
tic 223
V10400
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CBVK741B019
Abstract: F63TNR NZT6729 PN2222N TN6729A tic 223 PN2222A TRANSISTOR L7500 S7 em 223 TO-226-AE
Text: TN6729A / NZT6729 TN6729A NZT6729 C E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings*
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TN6729A
NZT6729
TN6729A
O-226
OT-223
CBVK741B019
F63TNR
NZT6729
PN2222N
tic 223
PN2222A TRANSISTOR
L7500
S7 em 223
TO-226-AE
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TN2905A
Abstract: TN-29-07 CBVK741B019 F63TNR PN2222N PN2907A TN2907A TN2905
Text: TN2905A TN2905A TN2907A C TO-226 B E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*
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TN2905A
TN2907A)
O-226
PN2907A
TN2905A
TN-29-07
CBVK741B019
F63TNR
PN2222N
TN2907A
TN2905
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transistor tic 226
Abstract: CBVK741B019 F63TNR FPN330 FPN330A PN2222N
Text: FPN330 / FPN330A FPN330 FPN330A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol
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FPN330
FPN330A
FPN330
O-226
transistor tic 226
CBVK741B019
F63TNR
FPN330A
PN2222N
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2N7051
Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N
Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*
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2N7053
NZT7053
O-226
OT-223
2N7051
2N7053
CBVK741B019
F63TNR
NZT7053
PN2222N
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CBVK741B019
Abstract: F63TNR NZT6717 PN2222N TN6717A
Text: TN6717A / NZT6717 TN6717A NZT6717 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39. Absolute Maximum Ratings*
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TN6717A
NZT6717
TN6717A
O-226
OT-223
CBVK741B019
F63TNR
NZT6717
PN2222N
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Untitled
Abstract: No abstract text available
Text: TN6726A / NZT6726 NZT6726 TN6726A C E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings*
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TN6726A
NZT6726
TN6726A
O-226
OT-223
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FPN660A
Abstract: CBVK741B019 F63TNR FPN660 PN2222N pnp Saturation transistor to-226
Text: FPN660 / FPN660A FPN660 FPN660A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PA. Absolute Maximum Ratings* Symbol
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FPN660
FPN660A
FPN660
O-226
FPN660A
CBVK741B019
F63TNR
PN2222N
pnp Saturation transistor to-226
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CBVK741B019
Abstract: F63TNR FPN430 FPN430A PN2222N
Text: FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol
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FPN430
FPN430A
FPN430
O-226
CBVK741B019
F63TNR
FPN430A
PN2222N
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Untitled
Abstract: No abstract text available
Text: TN6715A / NZT6715 NZT6715 TN6715A C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*
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TN6715A
NZT6715
TN6715A
O-226
OT-223
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Untitled
Abstract: No abstract text available
Text: TN6728A / NZT6728 TN6728A NZT6728 C E E C C B TO-226 B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings*
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TN6728A
NZT6728
TN6728A
O-226
OT-223
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TN2222
Abstract: No abstract text available
Text: TN2219A TN2219A TN2222A C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings*
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TN2219A
TN2222A)
O-226
PN2222A
TN2222
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transistor A1 HB
Abstract: PN2222N EO70 CBVK741B019 F63TNR transistor k 0247 ad label information on the box
Text: TO-226AE Tape and Reel Data TO -226AE Packaging Conf iguratio n: Fi gur e 1.0 TAPE and REEL OPTION FSCINT Label sampl e See Fig 2.0 for va rious FAIRCHIL D S EMICONDUCTOR CORPORATION L OT: 41B019 PN2222N NSID: D/C1: QTY: Reeling Styles HTB:B 10000 SP EC:
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O-226AE
-226AE
CBVK741B019
PN2222N
D9842
F63TNR
41B019
PN222N
F63TNR
transistor A1 HB
PN2222N
EO70
CBVK741B019
transistor k 0247
ad label information on the box
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