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    Analog Devices Inc DC1418A-A

    EVAL BOARD FOR LT6604-2.5
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    DigiKey DC1418A-A Box 1 1
    • 1 $146.6
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    Mouser Electronics DC1418A-A
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    Analog Devices Inc DC1418A-A 67
    • 1 $146.19
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    Richardson RFPD DC1418A-A 1
    • 1 $141.24
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    Analog Devices Inc DC2418A-A

    EVAL BOARD FOR LTC4368-1
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    DigiKey DC2418A-A Box 1 1
    • 1 $89.17
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    Mouser Electronics DC2418A-A 2
    • 1 $88.66
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    Newark DC2418A-A Bulk 14 1
    • 1 $92.21
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    Analog Devices Inc DC2418A-A 18
    • 1 $88.91
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    Richardson RFPD DC2418A-A 1
    • 1 $84.74
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    Skyworks Solutions Inc 514BAA002418AAG

    DIFFERENTIAL/SINGLE-ENDED; I2C P
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    DigiKey 514BAA002418AAG 200
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    Richardson RFPD 514BAA002418AAG 1
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    Skyworks Solutions Inc 514BBA002418AAG

    DIFFERENTIAL/SINGLE-ENDED; I2C P
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    DigiKey 514BBA002418AAG 200
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    • 1000 $15.36735
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    Richardson RFPD 514BBA002418AAG 1
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    Skyworks Solutions Inc 514BBA002418AAGR

    DIFFERENTIAL/SINGLE-ENDED; I2C P
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    DigiKey 514BBA002418AAGR Reel 1,000
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    Richardson RFPD 514BBA002418AAGR 1
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    418AA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    418AA

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK CASE 418AA ISSUE O 4 2 DATE 27 JUN 2003 1 3 C SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E V W −B− 4 DIM A B C D E F G J K M S V A 1 2 S 3 −T−


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    418AA 418AA PDF

    65n02r

    Abstract: 65N02 p65n02r P65N02
    Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge V BR DSS


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    NTB65N02R, NTP65N02R O-220, NTP65N02R 65n02r 65N02 p65n02r P65N02 PDF

    TRANSISTOR tl-31

    Abstract: NTB18N06
    Text: NTP18N06, NTB18N06 Power MOSFET 15 Amps, 60 Volts N−Channel TO−220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 15 AMPERES 60 VOLTS RDS on = 90 mΩ


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    NTP18N06, NTB18N06 O-220 O-220AB 418AA TRANSISTOR tl-31 PDF

    calculation of line diSTANCE relay REL 670

    Abstract: calculation of line differential relay RED 670 full ready report on automatic phase changer 1MRK 506 267-WEN SWITCHYARD LAYOUT IEC61850 RTXP24 REL 670 IEC-103 1A5060 5A 4 pole relay 220v ac
    Text: Line distance protection IED REL 670 Buyer's Guide Open Configuration 1MRK 506 237-BEN Revision: G Issued: February 2007 Data subject to change without notice Page 1 Features • A protection, control, and monitoring IED with extensive functional library and configuration


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    237-BEN 1KHA001027 1MRS755552 SE-721 calculation of line diSTANCE relay REL 670 calculation of line differential relay RED 670 full ready report on automatic phase changer 1MRK 506 267-WEN SWITCHYARD LAYOUT IEC61850 RTXP24 REL 670 IEC-103 1A5060 5A 4 pole relay 220v ac PDF

    NTB18N06

    Abstract: NTP18N06G AN569 NTB18N06T4 NTP18N06
    Text: NTP18N06, NTB18N06 Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. N−Channel Typical Applications • • • •


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    NTP18N06, NTB18N06 O-220 NTP18N06/D NTB18N06 NTP18N06G AN569 NTB18N06T4 NTP18N06 PDF

    75n03

    Abstract: 75N03R P75N03R P75N03
    Text: NTB75N03R, NTP75N03R Power MOSFET 75 Amps, 25 Volts N−Channel D2PAK, TO−220 Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge


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    NTB75N03R, NTP75N03R O-220 P75N03R O-220AB 418AA NTB75N03R/D 75n03 75N03R P75N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • • http://onsemi.com 125 AMPERES, 24 VOLTS


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    NTB125N02R, NTP125N02R NTB125N02R/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


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    NTB13N10 NTB13N10/D PDF

    733 mosfet

    Abstract: No abstract text available
    Text: NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications


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    NTP85N03, NTB85N03 O-220 O-220AB 418AA 733 mosfet PDF

    N03G

    Abstract: ON N03G t23n03g T23N03 t23 n03g NTB23N03RG Datasheets N03G NTB23N03R NTB23N03RT4 NTB23N03RT4G
    Text: NTB23N03R Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features 23 AMPERES, 25 VOLTS RDS on = 32 mW (Typ)


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    NTB23N03R NTB23N03R/D N03G ON N03G t23n03g T23N03 t23 n03g NTB23N03RG Datasheets N03G NTB23N03R NTB23N03RT4 NTB23N03RT4G PDF

    65n02r

    Abstract: 65N02 NTB65N02R NTB65N02RT4 NTP65N02R p65n02 p65n02r
    Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge V BR DSS


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    NTB65N02R, NTP65N02R O-220, NTB65N02R/D 65n02r 65N02 NTB65N02R NTB65N02RT4 NTP65N02R p65n02 p65n02r PDF

    03L09G

    Abstract: SPICE QT 60 CIRCUIT DIAGRAMS 75N03 75N03L 75N03L09 75N03L09G NTB75N03L09T4G MTB75N03HDL MTP75N03HDL NTB75N03L09
    Text: NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.


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    NTP75N03L09, NTB75N03L09 O-220 NTP75N03L09/D 03L09G SPICE QT 60 CIRCUIT DIAGRAMS 75N03 75N03L 75N03L09 75N03L09G NTB75N03L09T4G MTB75N03HDL MTP75N03HDL NTB75N03L09 PDF

    85n03g

    Abstract: 85N03 TB 85N03G NTB85N03g NTP85N03G NTB85N03 NTB85N03T4 NTB85N03T4G NTP85N03 FET MARKING QG
    Text: NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 85 AMPERES, 28 VOLTS


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    NTP85N03, NTB85N03 O-220 NTP85N03/D 85n03g 85N03 TB 85N03G NTB85N03g NTP85N03G NTB85N03 NTB85N03T4 NTB85N03T4G NTP85N03 FET MARKING QG PDF

    AN569

    Abstract: NTB85N03 NTB85N03T4 NTP85N03 SMD310
    Text: NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications


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    NTP85N03, NTB85N03 O-220 NTP85N03/D AN569 NTB85N03 NTB85N03T4 NTP85N03 SMD310 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 & D2PAK http://onsemi.com Features • • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature


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    NTP4302, NTB4302 NTP4302/D PDF

    23N03G

    Abstract: No abstract text available
    Text: NTB23N03R Power MOSFET 23 Amps, 25 Volts N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features 23 AMPERES, 25 VOLTS RDS on = 32 mW (Typ)


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    NTB23N03R NTB23N03R/D 23N03G PDF

    65N02R

    Abstract: 65N02 65N02RG p65n02rg 418AA-01 NTB65N02R NTB65N02RG NTB65N02RT4 NTP65N02R p65n02
    Text: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge


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    NTB65N02R, NTP65N02R O-220, NTB65N02R/D 65N02R 65N02 65N02RG p65n02rg 418AA-01 NTB65N02R NTB65N02RG NTB65N02RT4 NTP65N02R p65n02 PDF

    75N03L09

    Abstract: 75N03L 75N03 A/M29F002BB(45/55/70/90/75N03L09
    Text: NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts, N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.


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    NTP75N03L09, NTB75N03L09 O-220 75N03L09 75N03L 75N03 A/M29F002BB(45/55/70/90/75N03L09 PDF

    418AA

    Abstract: No abstract text available
    Text: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 and D2PAK Features • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature


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    NTP4302, NTB4302 O-220 NTx4302 NTB4302 0E-04 0E-03 0E-02 418AA PDF

    "943" to-220

    Abstract: MTB1306 MOSFET n03 N0306
    Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand


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    NTP75N03-06, NTB75N03-06 O-220 "943" to-220 MTB1306 MOSFET n03 N0306 PDF

    NTB4302

    Abstract: NTB4302T4 NTP4302
    Text: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 and D2PAK Features • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature


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    NTP4302, NTB4302 O-220 NTP4302/D NTB4302 NTB4302T4 NTP4302 PDF

    NTB4302

    Abstract: NTB4302G NTB4302T4 NTB4302T4G NTP4302 NTP4302G DSA0032463 418AA-01
    Text: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 & D2PAK http://onsemi.com Features • • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature


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    NTP4302, NTB4302 O-220 NTP4302/D NTB4302 NTB4302G NTB4302T4 NTB4302T4G NTP4302 NTP4302G DSA0032463 418AA-01 PDF

    03L09

    Abstract: No abstract text available
    Text: NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.


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    NTP75N03L09, NTB75N03L09 O-220 NTP75N03L09/D 03L09 PDF

    NTB18N06

    Abstract: No abstract text available
    Text: NTP18N06, NTB18N06 Power MOSFET 15 Amps, 60 Volts N−Channel TO−220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 15 AMPERES 60 VOLTS RDS on = 90 mΩ


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    NTP18N06, NTB18N06 O-220 O-220AB 418AA NTP18N06/D PDF