cdi ignition
Abstract: MKP 338 2 X2 ENEC KP H 1000 pF axial R.46 MKP X2 MKP 1813 MKP 339 1 X1 MKP Y2/X1 mkp x2 enec MKP 339 1 capacitor r. 46 mkp x2
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . C apacit o rs S elect o r G ui d e Film capacitors 303 / 304 312 313 314 338 1 338 4 338 6 339 3 6 5 - 3 67 370 - 373 375 38 3 38 5 38 6 40 5 416 - 417 - 418 - 419 - 420 422 - 422 mini 467 - 46 8 - 46 9 471
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VMN-SG0042-0704
cdi ignition
MKP 338 2 X2 ENEC
KP H 1000 pF axial
R.46 MKP X2
MKP 1813
MKP 339 1 X1
MKP Y2/X1
mkp x2 enec
MKP 339 1 capacitor
r. 46 mkp x2
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IXFD21N100F-8F
Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005
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IXFD76N07-7X
IXFD180N07-9X
IXFD340N07-9Y
IXFD180N085-9X
IXFD280N085-9Y
IXFD75N10-7X
IXFD80N10Q-8X
IXFD170N10-9X
IXFD230N10-9Y
IXFD70N15-7X
IXFD21N100F-8F
IXFD38N100Q2-95
DIODE 1581
IXYS IXFK21N100Q
IXFH40N30
IXFH40N50Q
IXFK38N80Q2
7Y 6
IXFB50N80Q2
IXFN80N50
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IXFH32N50Q equivalent
Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω
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IXFD50N20-7X
IXFD50N20Q-7X
IXFD80N20Q-8X
IXFD90N20Q-8Y
IXFD120N20-9X
IXFD180N20-9Y
IXFD60N25Q-8X
IXFD100N25-9X
IXFD40N30-7X
IXFD40N30Q-7X
IXFH32N50Q equivalent
ixfk24n100
IXFN80N50
1672 mos-fet
IXFH40N30
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Marking Code S72
Abstract: mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72
Text: 2N7002 N-Channel Enhancement-Mode MOSFET Voltage Range 60 Volts Current 230 mAmpere TO-236AB SOT-23 Features a a a a a a a 0.020(0.51) 0.015(0.37) Advanced trench process technology High density cell design for ultra-low on-resistance High input impedance
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2N7002
O-236AB
OT-23)
OT-23
45NCE
500mA
Marking Code S72
mosfet 2n7002
S72 marking
DIODE 30V
transistor marking s72
2N7002 MARKING s72
2N7002 MARKING
transistor s72
2N7002
code s72
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SSS60N
Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00
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OCR Scan
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O-220
IRFSZ20
SSS15N05
IRFSZ30
IRFSZ40
SSS50N05
SSS60N05
IRFSZ24
SSS15N06
IRFSZ34
SSS60N
sss6n60
SSS50N06
1RFS644
IRFS540
IRFS541
SSS7N60
irfs630
RFS830
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S72 FET
Abstract: 2N7002 marking code 72 J Marking Code S72 S72 marking MOSFET dynamic S72 2n7002 s72 mosfet 2N7002 marking code 72 2N7002 mosfet s72
Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA H C N TREENFET G TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration .016 (0.4) 0.037 (0.95) 0.037 (0.95) .045 (1.15)
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2N7002
230mA
O-236AB
OT-23)
OT-23
S72 FET
2N7002 marking code 72 J
Marking Code S72
S72 marking
MOSFET dynamic
S72 2n7002
s72 mosfet
2N7002 marking code 72
2N7002
mosfet s72
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2N7002 marking code 72
Abstract: Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J
Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)
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2N7002
230mA
O-236AB
OT-23)
OT-23
E8/10K
30K/box
30K/box
2N7002 marking code 72
Marking Code S72
2N7002 MARKING s72
s72 mosfet
S72 2n7002
2N7002 marking code 72 J
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POWER MOSFET 4600
Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X
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OCR Scan
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1XFD76N07-7X
IXFD180N07-9X
IXFD340N07-9Y
IXFD67N10-7X
XFD75N10-7X
IXFD75N10Q-7X
XFD80N100-8X
XFD170N10-9X
XFD230N10-9Y
IXFD70N15-7X
POWER MOSFET 4600
MOSFET 4600
4600 mosfet
IXFD80N20Q-8X
IXFD40N30-7X
IXFX90N20Q
1219X
IXFN80N50
IXFn44N80
IXFN39N90
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G3VM-355CR
Abstract: 417 mosfet G3VM-355F mosfet 416 G3VM-355C G3VM-355FR G3VM relay CR 10
Text: Omron A5 Catalogue 2006 295-430 14/10/05 10:09 am Page 416 MOSFET Relay – G3VM-355C/CR/F/FR New MOS FET Relay with Both SPST-NO and SPST-NC Contacts Incorporated in a Single DIP Package. General-purpose Series Added. • SPST-NO/SPST-NC models now included in
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G3VM-355C/CR/F/FR
G3VM-355C/CR
G3VM-355F/FR
G3VM-355CR/FR
G3VM-355C/F
G3VM-355CR
417 mosfet
G3VM-355F
mosfet 416
G3VM-355C
G3VM-355FR
G3VM
relay CR 10
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2N7002
Abstract: No abstract text available
Text: SSM7002EN N-CHANNEL ENHANCEMENT-MODE MOSFET BV DSS CMOS logic compatible gate drive SOT-23 TO-263AB outline R DS(ON) D Small surface-mount package 60V 3Ω 230mA ID S SOT-23 Description G D Advanced MOSFETs from Silicon Standard use a "trench" process to
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SSM7002EN
OT-23
O-263AB)
230mA
SSM7002EN
2N7002
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Untitled
Abstract: No abstract text available
Text: FMD 21-05QC FDM 21-05QC ID25 = 21 A = 500 V VDSS Ω RDSon typ. = 190 mΩ Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM FMD FDM 3 3 Preliminary data 5 4 4 1 1 2 5 2 Features Symbol Conditions V DSS TVJ = 25°C to 150°C Maximum Ratings VGS
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21-05QC
21-05QC
E72873
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TSP70
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series
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TSP2305A
TSP40GD120P
TSP25G135T
O-247
TSP25GD135T
TSP25G135P
TSP25GD135P
TSP70
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets
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Untitled
Abstract: No abstract text available
Text: MMBF170 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)
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MMBF170
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Untitled
Abstract: No abstract text available
Text: MOSFET IC DIP Type SMD Type Type Product specification 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS ON 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2N7002E
OT-23
250mA
200mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJ2305K P-Channel 12-V D-S MOSFET SOT-23-3L FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
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OT-23-3L
CJ2305K
OT-23-3L
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417 TRANSISTOR
Abstract: 2N7002E
Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS ON 0.4 3 2 +0.1 0.95-0.1
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2N7002E
OT-23
250mA
200mA
417 TRANSISTOR
2N7002E
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3415 P-Channel 20-V D-S MOSFET SOT-23-3L FEATURE Excellent RDS(ON), low gate charge,low gate voltages 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS Load switch and in PWM applicatopns
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OT-23-3L
CJK3415
OT-23-3L
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CHM6031LPAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM6031LPAGP CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM6031LPAGP
O-252)
CHM6031LPAGP
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channels 15 ampere mosfet
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM703ALPAPT CURRENT 40 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM703ALPAPT
O-252A
O-252A)
channels 15 ampere mosfet
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CHM62A3PAPT
Abstract: gs 069
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM62A3PAPT CURRENT 55 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM62A3PAPT
O-252A
O-252A)
CHM62A3PAPT
gs 069
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gs 069
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM50N06PAPT CURRENT 36 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM50N06PAPT
O-252A
O-252A)
gs 069
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TC.. 12A MOSFET Drivers
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM71A3PAPT CURRENT 65 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM71A3PAPT
O-252A
O-252A)
TC.. 12A MOSFET Drivers
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM634PAPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 6.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM634PAPT
O-252A
O-252A)
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