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    415 TRANSISTOR Search Results

    415 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    415 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 415

    Abstract: MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,


    Original     		PDF stea01-01 GEO06645 GEX06630 transistor 415 MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960

    transistor 415

    Abstract: OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,


    Original     		PDF GEOY6645 GEXY6630 transistor 415 OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296

    Untitled

    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,


    Original     		PDF 415-U 416-R Q62702-P296 Q62702-P1137 Q62702-P1139

    Untitled

    Abstract: No abstract text available
    Text: NetChip Technology, Inc. 625-C Clyde Avenue Mountain View, California 94043 415 526-1490 Fax (415) 526-1494 e-mail: dtu@worldnet.att.net NET2868 USB Hub Controller Preliminary Specification Document: TBD Revision: 0.4 Date: 10/29/96 Specification NET2868 USB Hub Controller


    Original     		PDF 625-C NET2868 19stream

    HPA415

    Abstract: TPS54232D GRM31CR61E106KA
    Text: User's Guide SLVU277 – January 2009 TPS54232EVM-415 2-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3


    Original     		PDF SLVU277 TPS54232EVM-415 HPA415 TPS54232D GRM31CR61E106KA

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA05JT065-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 650 V 2.1 V 5A 415 m Features •       250 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA05JT065-CAL GA05JT065 22E-47 91E-27 37E-10 36E-10 50E-02 GA05JT065-CAL

    Untitled

    Abstract: No abstract text available
    Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417


    Original     		PDF BF416 BF418 -25mA) -250V -300V 70MHz O-126- CB-16

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


    Original     		PDF FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084

    ic SL 1626

    Abstract: 100C 2N2812 2N2814
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 January 2004. MIL-PRF-19500/415A 31 October 2003 SUPERSEDING MIL-S-19500/415 USAF 10 July 1969 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER


    Original     		PDF MIL-PRF-19500/415A MIL-S-19500/415 2N2812 2N2814 MIL-PRF-19500. ic SL 1626 100C

    stereo socket

    Abstract: Monolithic Transistor Pair 1102B ALD1101 ALD1102 ALD1102A ALD1102B
    Text: ADVANCED LINEAR DEVICES, INC. ALD1102A/ALD1102B ALD1102 DUAL P-CHANNEL MATCHED MOSFET PAIR 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: 408 747-1155 Fax: (408) 747-1286 http://www.aldinc.com GENERAL DESCRIPTION


    Original     		PDF ALD1102A/ALD1102B ALD1102 ALD1102 -10X10-6 -10X10-9 -10X10-12 stereo socket Monolithic Transistor Pair 1102B ALD1101 ALD1102A ALD1102B

    ALD1101A

    Abstract: ALD1101 ALD1101B ALD1102 mosfet Vgs 10mV
    Text: ADVANCED LINEAR DEVICES, INC. ALD1101A/ALD1101B ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: 408 747-1155 Fax: (408) 747-1286 http://www.aldinc.com GENERAL DESCRIPTION


    Original     		PDF ALD1101A/ALD1101B ALD1101 ALD1101 10X10-6 10X10-9 10X10-12 ALD1101A ALD1101B ALD1102 mosfet Vgs 10mV

    Untitled

    Abstract: No abstract text available
    Text: JS524575 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)75 Absolute Max. Power Diss. (W)415 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A)4.0m I(GSS) Max. (A)500n


    Original     		PDF JS524575 NumberTR00300008

    2SD415

    Abstract: 2SD414 2SB548 2SB549 nec transistor 2sb549 NEC 2SD414 SD414
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package


    Original     		PDF 2SB548, 549/2SD414, 2SB549/ 2SD415 2SB548/ 2SD414 2SD415 2SD414 2SB548 2SB549 nec transistor 2sb549 NEC 2SD414 SD414

    CPC5621A

    Abstract: CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet
    Text: CPC5603 N Channel Depletion Mode FET Parameter Drain-to-Source Voltage VDS Max On-Resistance (Ron-max) Max Power Rating 415 14 2.5 Features • • • • • • • 415V Drain-to-Source Voltage Low On-Resistance: 8 Ohms (Typical) High Input Impedance


    Original     		PDF CPC5603 OT-223 CPC5603 DS-CPC5603-R03 CPC5621A CPC5603C CPC5603CTR CPC5620A CPC5622A depletion mode fet

    on 5295 transistor

    Abstract: on 5295 equivalents JANTX2N28 2N2812 2N2814 JAN2N2812 JAN2N2814 transistors substitute JANTX2N2814
    Text: MIL SPECS ï c | 0000125 OOOBSOb T | ~ MIL-S-195Ü0/415 USAF NOTICE 1 9 September 1986 NOTICE I [OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812, AND 2N2814 JAN, AND JANTX MIL-S-19500/415(USAF) Amendment 2, dated 18 April 1973, has been reviewed and


    OCR Scan     		PDF MIL-S-19500/415 2N2812, 2N2814 MIL-S-19500, MIL-S-19500 5961-F208) on 5295 transistor on 5295 equivalents JANTX2N28 2N2812 JAN2N2812 JAN2N2814 transistors substitute JANTX2N2814

    BC 418

    Abstract: bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415
    Text: *BC 415 BC 416 PNP SILICON TRANSISTORS, EPITA X IA L PLANAR TRANSISTORS PNP S ILIC IU M , PLA N A R E P IT A X IA U X % Preferred device D is p o s itif recommandé The BC 415 and BC 416 are very low noise transistors intended for input stages in audio ^ frequency amplifiers.


    OCR Scan     		PDF CB-76 BC 418 bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLCS-470 Series TMP47C215/415 CMOS 4-Bit Microcontroller single chip microcomputer, integrating ROM, RAM, input/out­ put ports, timer/counters, a serial interface, and two clock generators on a chip. TMP47C215N TMP47C415N The 47C215/415 is a high speed and high performance 4-bit


    OCR Scan     		PDF TLCS-470 TMP47C215/415 TMP47C215N TMP47C415N 47C215/415 TLCS470 SDIP42-P-600 244//S

    TRANSISTOR BC 416 b pnp

    Abstract: TRANSISTOR BC 415 TRANSISTOR BC 416 b TRANSISTOR BC 415 b pnp BC 104 transistor bc416 TFK 802 tfk 416 TFK 110 TRANSISTOR BC 560
    Text: BC 415 • BC 416 Silizium-PNP-Epitaxial-Planar NF-Transistoren Silicon PN P Epitaxial Planar A F Transistors Anwendungen: Rauscharme Vorstufen Applications: Low noise pre stages Features: Besondere Merkmale: • Rauschmaß < 2 dB • Noise figure < 2 dB • In Gruppen sortiert


    OCR Scan     		PDF

    SFH415 applications

    Abstract: No abstract text available
    Text: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES


    OCR Scan     		PDF SFH416 SFH415 416-R -SFH415 SFH416 SFH415 applications

    BF418

    Abstract: BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video
    Text: BF 416 *BF418 PNP SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL Compì, of BF 415 and BF 417 Preferred device D isp o sitif recommandé Video output stages in T V sets Etages de sortie des amplificateurs Video dans ies téléviseurs


    OCR Scan     		PDF BF416 BF418 O-126- CB-16 BF418 BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video

    BC413

    Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
    Text: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP


    OCR Scan     		PDF A53Sba5 D041S64 VPTO52I2 Q62702-C375 Q62702-C375-V1 Q62702-C375-V2 Q62702-C376 Q62702-C376-V1 Q62702-C376-V2 35Li05 BC413 AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c

    bc 471

    Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
    Text: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN


    OCR Scan     		PDF fi23SbGS Q62702-C377 Q62702-C377-V1 Q62702-C377-V2 Q62702-C377-V3 Q62702-C378 Q62702-C378-V1 Q62702-C378-V2 Q62702-C378-V3 fl535b05 bc 471 IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN

    Untitled

    Abstract: No abstract text available
    Text: Am93L415/Am93L425 1024 X 1 Bit TTL Bipolar IMOX RAM Output preconditioned during write to eliminate write recovery glitch Available with three-state outputs Am93L425 series or with open-collector outputs (Am93L415 series) Plug-in replacement for Fairchild 93L415A/415 and


    OCR Scan     		PDF Am93L415/Am93L425 1024-word 93L415A/425A Am93L425 Am93L415 93L415A/415 93L425A/425,

    bc177

    Abstract: No abstract text available
    Text: | N AMER PHILIPS/DISCRETE b'lE D bb53T31 Q0S7513 415 H A P X BC177 to 179 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes with the collector connected to the case. The BC177 is a high-voltage type and primarily intended for use in driver stages of audio amplifiers


    OCR Scan     		PDF bb53T31 Q0S7513 BC177 BC178 BC179 BC107, 0Q27S20 DD275S1