sbr830
Abstract: 1l431
Text: Index HER301 thru HER306 . 21 HER601 thru HER604 . 21 IM B D IMBD4448 . 5 IMBT3904. 15
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HER301
HER306
HER601
HER604
IMBD4448
IMBT3904.
IMBT3906.
ITTA56I.
KBJ4005G
thruKBJ410G.
sbr830
1l431
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diode t 4148
Abstract: t 4148 diode din 4148 diode din 4148 IN4448 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t
Text: «m » 'W 1N 4148 O • 1N 4149 -1N 4446 0 1N 4447 • 1N 4448 O • 1N 4449 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Die elektrischen Daten entsprechen den Dioden:
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-1N4446
1N914A
IN4446
1N914B
IN4448
diode t 4148
t 4148 diode
din 4148
diode din 4148
T 4148
diode IN 4148
din 4448
diode IN4448
4148 t
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diode pj 916
Abstract: IC la 4148
Text: A I R C H I L D is c re te PO W E R & S ig n a l Technologies D SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
diode pj 916
IC la 4148
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LM 4138
Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
Text: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,
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TLCS-870/X
000FC
00102H
00FCH
11110000B
11011000B
11111111B
00001111B
10100110B
LM 4138
HL 482
RAM 4163
cd 4162
GFIJ
c 4161
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transistor bd135
Abstract: TRANSISTOR 4148 Diode 1N 4148 transistor J9
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Com m unications Network PCN base stations applications. It incorporates high value em itter ballast re s is to rs , gold m e ta lliz a tio n s and o ffe rs a high de g re e of re lia b ility and
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MRF6402
BD135
transistor bd135
TRANSISTOR 4148
Diode 1N 4148
transistor J9
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3021 The RF Line UHF P o w er Transistor T h e TP3Q21 is d e s ig n e d fo r 24 V c o m m o n e m itte r base s ta tio n a m p lifie r s . O p e ra tin g in th e 8 2 0 -9 6 0 M H z b a n d w id th , it ha s b e e n s p e c ific a lly d e s ig n e d fo r use in a n a lo g a n d d ig
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TP3021
TP3Q21
TP3040.
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itt diodes
Abstract: ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125
Text: Silicon Diodes Silicon Planar Diodes in “ d o u ble-plug” D O -35 and DO-7 g la ss en ca p su la tio n s Type M axim u m R a tin g s C h a ra c te ris tic s at Tamb = 2 5 C Si fa m b 25°C DO-7 DO-35 Vr V Vrm V lo mA @ @ T a mb = ca Je ^ 25 °C P tot
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DO-35
100i2
DO-35
itt diodes
ITT 914
4148 itt
itt 1501
ITT2003
ITT700
ITT777
itt diodes 125
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A209K
Abstract: 1pm05 tda 7812 KA213A KP303D B342D sft353 GL 7812 u 711 service-mitteilungen
Text: SERVICE-MITTEILUNGEN VEB IN D US TR IEV E R TR IE B R U N D F U N K U N D FERNSEHEN jf jl f j= = Ì 3 I ra d io - television AUSGABE: 1985 3 S e ite 1 - 4 Ü b e r s i c h t über d ie w ic h tig s te n H a lb le ite r Stand* A p ril 1985 Die in den S e rv ic e -M itte ilu n g e n N r. 3 /8 2 v e r ö f f e n t l ic h t e Über
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Untitled
Abstract: No abstract text available
Text: DIODES PROFESSIONAL GRADE GENERAL PURPOSE DIODES — CONTINENTAL DE V I C E INDIA 32E D trr 4 nseo; dissipation 250 mW; IPM=225 mA. AXIAL LEAD * • 23033^4 OOOOOlfl 3 m T - VR Co A»A max Volts PF max 0.1 0.1 0.1 5.0 5.0 20 30 40 50 75 4 4 20 20 20 - 20 20
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DO-35
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A100D
Abstract: TP5002S
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Linear Pow er Transistor The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed as a low power driver with high gain and can be operated in Class A, B or C.
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TP5002S
A100D
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TRANSISTOR BD 135
Abstract: Q1206
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP 3021 The RF Line U H F P o w er T ran sisto r The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, it has been specifically designed for use in analog and digital GSM systems as a medium power output device.
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TP3021
Symbol70
TRANSISTOR BD 135
Q1206
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XHPM7A10S120DC3
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MHPM7A1OS120DC3 Hybrid Power Module Integrated Power Stage for 2.0 hp 460 VAC Motor Drive Motorola Preferred Device This VersaPow er m odule integrates a 3 -p h a s e inverter, 3 -p h a s e rectifier, brake, and tem perature sense in a single
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BAV99LT1
MHPM7A10S120DC3
XHPM7A10S120DC3
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2907
Abstract: N2907A 2N2907 N2907 2n2906 2907 pnp transistor 2907A a 2907 transistor 2907 2906
Text: 'W ' 2 N 2906 * 2 N 2906 A * 2 N 2907 O * 2 N 2907 A Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: Verstärker und S chalter Applications: A m plifiers and sw itches Features: Besondere Merkmale:
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TIPP31
Abstract: TIPP31A TIPP31B TIPP31C TIPP32 TIPP32A TIPP32B TIPP32C
Text: TIPP31, TIPP31A, TIPP31B, TIPP31C NPN SILICON POWER TRANSISTORS _ M A Y 1989 • R EVISED M A Y 1995 20 W Pulsed Pow er Dissipation • 100 V C apability 1 LP PACKAGE TOP VIEW • 2 A C ontinuous Collector Current • 4 A Peak C ollector Current
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TIPP31,
TIPP31A,
TIPP31B,
TIPP31C
TIPP31
TIPP31A
TIPP31B
TIPP32
TIPP32A
TIPP32B
TIPP32C
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365 pF variable capacitor
Abstract: LT1011
Text: LT1011, LT1011A VOLTAGE COMPARATORS _D3179, JANUARY 19B9 • Low Input O ffset V o lta g e . . . 1.5 or 0.5 mV Max JG OR P PACKAGE TOP VIEW GNDT • Maximum Input Bias C u rre n t. . . 50 o r 25 nA 0 7 IN + C • Low Input O ffset C u rre n t. . . 4 o r 3 nA Max
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LT1011,
LT1011A
D3179,
LT1011
LT1011A
365 pF variable capacitor
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rh 4148 diode
Abstract: LM 3915 IC 3915N 1N40D1
Text: Semiconductor ß LM3915 Dot/Bar Display Driver General Description The LM 3915 is a m onolithic integrated circuit that senses analog voltage levels and drives ten LEDs, LCDs or vacuum fluorescent displays, providing a logarithm ic 3 dB/step ana log display. O ne pin changes th e display from a bar graph to
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LM3915
rh 4148 diode
LM 3915 IC
3915N
1N40D1
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lc 7805
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor T h e T P 5 0 5 1 is d e s ig n e d fo r 4 7 0 M H z c e llu la r r a d io b a s e s t a tio n s in b o th a n a lo g a n d d ig it a l a p p lic a t io n s . It in c o r p o r a t e s h ig h v a lu e e m it t e r b a lla s t
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TP5051
lc 7805
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T3D DIODE
Abstract: noise meters block diagram 1J0F dps 350 power supply schematic 1n414b dt t3d 13 T3D 64 UTP cat 6 cable data sheet 400M CLC014
Text: Adaptive Cable Equalizer for High-Speed Data Recovery National Semiconductor Comlinear CLC014 APPLICATIONS: • SMPTE 259M serial digital interfaces: NTSC/PAL, 4:2:2 component and wide screen; also 540Mbps 4:4:4:4 • Serial digital video routing and distribution
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CLC014
540Mbps
CLC014
exte0-180-530
DDD3433
T3D DIODE
noise meters block diagram
1J0F
dps 350 power supply schematic
1n414b
dt t3d 13
T3D 64
UTP cat 6 cable data sheet
400M
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IC-1555
Abstract: ic1555 schmitt trigger using ic 555 schmitt trigger using ic 555 hysteresis voltage controlled oscillator ic 555 MIC1555
Text: M IC I 5 5 5 /1 5 5 7 IttyBitty RC Timer / Oscillator Advance Information General D escription Features T he M IC1555 IttyBitty™ C M O S R C timer/oscillator and M IC1557 IttyBitty C M O S R C oscillator are designed to pro vide rail-to-rail pulses for precise time delay or frequency
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IC1555
IC1557
MIC1555
IC-1555
schmitt trigger using ic 555
schmitt trigger using ic 555 hysteresis
voltage controlled oscillator ic 555
MIC1555
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2N2807
Abstract: 4148 t 2N2805 2N2804
Text: TY P ES 2N2802 T H R U 2N2807 D U A L P -N -P S ILIC O N T R A N S IS T O R S B U L L E T I N N O . D L -S 7 2 1 1 6 8 0 , M A R C H 1 9 7 2 TWO P-N-P TRANSISTORS IN ONE PACKAGE RECOMMENDED FOR • Differential Amplifiers • Low-Noise, Low-Level Amplifiers
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2N2802
2N2807
2N2639
2N2644
4148 t
2N2805
2N2804
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IM4001
Abstract: 3916N IC LM 3915 LM391S DLM3-915 LM 3916 IC
Text: ß Semiconductor LM3916 Dot/Bar Display Driver General Description The LM 3916 is a m onolithic integrated circuit that senses analog voltage levels and drives ten LEDs, LCDs or vacuum fluorescent displays, providing an electronic version of the popular VU meter. O ne pin changes th e display from a bar
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LM3916
IM4001
3916N
IC LM 3915
LM391S
DLM3-915
LM 3916 IC
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2270B
Abstract: K5530
Text: jilmEì TK5530 WIRELESS « uC Read-Only Transponder Description The T K 5530 is a com plete transponder, w hich im ple m ents all im portant functions for im m obilizer and identification system s. It consists o f a plastic cube w hich accom m odates the read-only IDIC * e5530 and the an
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TK5530
TK5530
e5530
e5530,
e5530
44C260
04-0ct-00
04-0et-00
2270B
K5530
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zener T 4148
Abstract: zener 1n 4148 1n 4148 zener diode RF154 zener 1n f154 749 MOSFET TRANSISTOR motorola Zener Diode 4148
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages In the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
zener T 4148
zener 1n 4148
1n 4148 zener diode
RF154
zener 1n
f154
749 MOSFET TRANSISTOR motorola
Zener Diode 4148
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Untitled
Abstract: No abstract text available
Text: ERICSSON $ September 1989 PBL 3755 PCM-Repeater Description Key Features The PBL 3755 is a bipolar integrated circuit that contains all the necessary functions to form a regenerative repeater for Pulse Code M odulated PCM telecom m unications systems. The circuit is designed to operate at 2.048 Mbps CEPT lines with HDB3 code
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3755J
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