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    4142 TS Search Results

    4142 TS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LPS4414-223MLB Coilcraft Inc General Purpose Inductor, 22uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-222MRB Coilcraft Inc General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-224MRB Coilcraft Inc General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-222MLC Coilcraft Inc General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, ROHS COMPLIANT Visit Coilcraft Inc
    LPS4414-224MRC Coilcraft Inc General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
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    4142 TS Price and Stock

    Infineon Technologies AG ITS4142N

    Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ITS4142N 36,100
    • 1 $2.13
    • 10 $1.91
    • 100 $1.54
    • 1000 $1.11
    • 10000 $0.905
    		Buy Now

    Infineon Technologies AG BTS4142NHUMA1

    Power Switch ICs - Power Distribution SMART HI-SIDE PWR SWITCH 1-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BTS4142NHUMA1 27,929
    • 1 $2.18
    • 10 $1.61
    • 100 $1.44
    • 1000 $1.25
    • 10000 $1.16
    		Buy Now

    Infineon Technologies AG ITS4142NHUMA1

    Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ITS4142NHUMA1 15,222
    • 1 $1.75
    • 10 $1.42
    • 100 $1.25
    • 1000 $1.02
    • 10000 $0.943
    		Buy Now

    Infineon Technologies AG BTS4142N

    Power Switch ICs - Power Distribution SMART HI-SIDE PWR SWITCH 1-CH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BTS4142N 13,686
    • 1 $2.6
    • 10 $2.34
    • 100 $1.88
    • 1000 $1.28
    • 10000 $1.12
    		Buy Now

    4142 TS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SD275SE30A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


    Original     		PDF SD275SE30A/B/C

    JB marking transistor

    Abstract: transistor marking JB MMBT5550 marking JB
    Text: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic


    OCR Scan     		PDF MMBT5550 10/iA, JB marking transistor transistor marking JB marking JB

    KM28C64A-20

    Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25
    Text: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write


    OCR Scan     		PDF KM28C64A/KM28C65A KM28C64A/65A: KM28C64AK65AI: KM28C65A) 64-Byte 120ns 7Tb4142 KM28C64A/KM28C65A KM28C64A-20 KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT4126 0Q072tfl

    8Q transistor

    Abstract: MMBTA56 MPSA55 SS MARKING TRANSISTOR
    Text: SAMSUNG SEMICONDUCTOR INC . MMBTA56 IME D | 7^4142 00Q72T? 7 | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBTA56 MPSA55 OT-23 -10mA 100mA -100mA, -100mA 100mA, 100MHz 8Q transistor MMBTA56 SS MARKING TRANSISTOR

    2N6515

    Abstract: 2N6516
    Text: SAMSUNG SEMICONDUCTOR INC 2N6516 14E D | 7^4142 00071^ 1 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: Vcto=300V * Collector Dlssipatioh: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic


    OCR Scan     		PDF 2N6516 625mW 2N6515 T-29-21 100mA, 20MHz 2N6515

    transistor

    Abstract: Samsung Semiconductor
    Text: r 7 [ SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o § 7^4142 0007am, i | NPN EPITAXIAL SILICON TRANSISTOR — : -' T AMPLIFIER TRANSISTOR - a R - - SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage


    OCR Scan     		PDF 0007am, MMBC1623L3 transistor Samsung Semiconductor

    MMBA812M4

    Abstract: MMBT5086
    Text: , SAMSUNG SEMICONDUCTOR INC MMBA812M4 ltíE 0 §7^4142 0007233 3 f PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBA812M4 OT-23 MMBT5086

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBTA43 OT-23

    KSR1006

    Abstract: KSR2006
    Text: SAMSUNG SEMICONDUCTOR INC '3 S '| \i4 E D J 7^4142 0007055 7 | KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In) • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10KO, R,=47KD)


    OCR Scan     		PDF 7clti4145 KSR1006 KSR2006 KSR2006

    KSR1011

    Abstract: KSR2011
    Text: SAMSUNG SEMICONDUCTOR IM E INC D 17^ 4142 0007107 *1 | PN P EPITAXIAL SILICON TRANSISTOR KSR2011 - 'T - 3 1 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=22KO)


    OCR Scan     		PDF KSR2011 KSR1011 10OjiA, -10mA, KSR1011 KSR2011

    transistor sot-23 marking L8

    Abstract: MMBT6427 H1030
    Text: SAMSUNG S EMICONDUCTOR INC MMBT6427 146 D | 7^4142 □□□7284 *1 | -fizf- NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT6427 OT-23 100/jA, T-29-29 transistor sot-23 marking L8 H1030

    2929 transistor

    Abstract: MMBT6427 MMBTA14 SOT-23 J
    Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 0075T1 MMBTA14 MMBT6427 T-29-29 OT-23 100jjA, 2929 transistor SOT-23 J

    MMBC1009F1

    Abstract: No abstract text available
    Text: SAM SUNG SEMICONDUCTOR INC MMBC1009F1 l^ E D | 7*ìfc.4142 00G723? | NPN EPITAXIAL SILICON TRANSISTOR1~ ^ AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic' Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 00G723? MMBC1009F1 OT-23 MMBC1009F1

    BCX71J

    Abstract: MMBT5086
    Text: SA MS UN G SEMICONDUCTOR INC BCX71J 1ME D | 7*^4142 000722b t, | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF BCX71J MMBT5086 OT-23

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBA812M4 1I,E 0 | 7^4142 0007233 3 | PNP EPITAXIAL SILICON TRANSISTOR T - n -o q GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBA812M4 MMBT5086

    IRF9640

    Abstract: irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IRF9641 IIRF9640
    Text: FEATURES TO -220 0G12EÔ3 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF9640/9641/9642/9643 7^4142 •


    OCR Scan     		PDF IRF9640/9641 IRFP9240/9241 IRF9640/IRFP9240 -200V IRF9641 /IRFP9241 -150V IRF9642/IRFP9242 IRF9643/IRFP9243 IRF9640 irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IIRF9640

    IRFr010

    Abstract: No abstract text available
    Text: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142


    OCR Scan     		PDF IRFR010/12/14/15 IRFU010/12/14/15 IRFR010/U010 IRFR01 2/U012 IRFR014/U014 IRFR015/U015 IRFR010/012 IRFR014/015 IRFU010/012 IRFr010

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage


    OCR Scan     		PDF KSB596 KSD526 GQG77fe

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D | 7^4142 00G723G fl | PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage


    OCR Scan     		PDF 00G723G MMBA811C7 OT-23

    it4142

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 14E D | ? it,4142 GOOtfllb 0 | KSA952 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION PT=600 mW High Hfe and LOW VCE<sat) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Symbol Collector-Base Voltage


    OCR Scan     		PDF KSA952 it4142

    JE2955

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS MJD2955 INC 42E D B 7^4142 OOCHOS'i 3 • SHGK PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan     		PDF MJD2955 JE2955 JE2955

    BCW72

    Abstract: MMBT5088
    Text: SAMS UN G SEMICONDUCTOR INC BCW72 IME D | 7*^4142 a007£lì i J[ NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C i Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitfer-Base Voltage Collector Current


    OCR Scan     		PDF 0075IT BCW72 MMBT5088 OT-23 10fjA, 35MHz

    IRFDC

    Abstract: KSC2682 KSA1142 KSC2688 samsung tv R3307 audio output TRANSISTOR NPN SAMSUNG transistor ksc2682 transistor J 3305 74143
    Text: SAMSUNG SEMICONDUCTOR INC KSC2682 IME O | 7^4142 0GG7Sfc>4 4 N P N EPITAXIAL SILICO N TRAN SISTO R AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSA1142 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF KSC2682 KSA1142 O-126 Vct-30V KSC2688 IRFDC KSA1142 KSC2688 samsung tv R3307 audio output TRANSISTOR NPN SAMSUNG transistor ksc2682 transistor J 3305 74143