4142 TS Search Results

4142 TS Result Highlights (5)

Part	Manufacturer	Description
LPS4414-223MLB	Coilcraft Inc	General Purpose Inductor, 22uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, ROHS COMPLIANT
LPS4414-222MRB	Coilcraft Inc	General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT
LPS4414-224MRB	Coilcraft Inc	General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT
LPS4414-222MLC	Coilcraft Inc	General Purpose Inductor, 2.2uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, ROHS COMPLIANT
LPS4414-224MRC	Coilcraft Inc	General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 1717, CHIP, 1717, HALOGEN FREE AND ROHS COMPLIANT

4142 TS Price and Stock

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Infineon Technologies AG ITS4142N Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ITS4142N		34,378			1 $2.13 10 $1.91 100 $1.54 1000 $1.11 10000 $0.874	Buy Now
Infineon Technologies AG BTS4142NHUMA1 Power Switch ICs - Power Distribution SMART HI-SIDE PWR SWITCH 1-CH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BTS4142NHUMA1		26,442			1 $1.77 10 $1.4 100 $1.31 1000 $1.22 10000 $1.13	Buy Now
Infineon Technologies AG ITS4142NHUMA1 Power Switch ICs - Power Distribution SMART HI SIDE SWITCH INDUSTRIAL APPS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ITS4142NHUMA1		15,643			1 $1.64 10 $1.27 100 $1.17 1000 $0.996 10000 $0.874	Buy Now
Infineon Technologies AG BTS4142N Power Switch ICs - Power Distribution SMART HI-SIDE PWR SWITCH 1-CH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BTS4142N		13,818			1 $2.6 10 $2.34 100 $1.88 1000 $1.28 10000 $1.08	Buy Now

4142 TS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SD275SE30A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode	Original	SD275SE30A/B/C	PDF
JB marking transistor Abstract: transistor marking JB MMBT5550 marking JB Text: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D \| 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic	OCR Scan	MMBT5550 10/iA, JB marking transistor transistor marking JB marking JB	PDF
KM28C64A-20 Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25 Text: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write	OCR Scan	KM28C64A/KM28C65A KM28C64A/65A: KM28C64AK65AI: KM28C65A) 64-Byte 120ns 7Tb4142 KM28C64A/KM28C65A KM28C64A-20 KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D \| 7^4142 0Q072tfl Q \| PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage	OCR Scan	MMBT4126 0Q072tfl	PDF
8Q transistor Abstract: MMBTA56 MPSA55 SS MARKING TRANSISTOR Text: SAMSUNG SEMICONDUCTOR INC . MMBTA56 IME D \| 7^4142 00Q72T? 7 \| PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	MMBTA56 MPSA55 OT-23 -10mA 100mA -100mA, -100mA 100mA, 100MHz 8Q transistor MMBTA56 SS MARKING TRANSISTOR	PDF
2N6515 Abstract: 2N6516 Text: SAMSUNG SEMICONDUCTOR INC 2N6516 14E D \| 7^4142 00071^ 1 \| NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: Vcto=300V * Collector Dlssipatioh: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic	OCR Scan	2N6516 625mW 2N6515 T-29-21 100mA, 20MHz 2N6515	PDF
transistor Abstract: Samsung Semiconductor Text: r 7 [ SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o § 7^4142 0007am, i \| NPN EPITAXIAL SILICON TRANSISTOR — : -' T AMPLIFIER TRANSISTOR - a R - - SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage	OCR Scan	0007am, MMBC1623L3 transistor Samsung Semiconductor	PDF
MMBA812M4 Abstract: MMBT5086 Text: , SAMSUNG SEMICONDUCTOR INC MMBA812M4 ltíE 0 §7^4142 0007233 3 f PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	MMBA812M4 OT-23 MMBT5086	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 \| NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	MMBTA43 OT-23	PDF
KSR1006 Abstract: KSR2006 Text: SAMSUNG SEMICONDUCTOR INC '3 S '\| \i4 E D J 7^4142 0007055 7 \| KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In) • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10KO, R,=47KD)	OCR Scan	7clti4145 KSR1006 KSR2006 KSR2006	PDF
KSR1011 Abstract: KSR2011 Text: SAMSUNG SEMICONDUCTOR IM E INC D 17^ 4142 0007107 *1 \| PN P EPITAXIAL SILICON TRANSISTOR KSR2011 - 'T - 3 1 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=22KO)	OCR Scan	KSR2011 KSR1011 10OjiA, -10mA, KSR1011 KSR2011	PDF
transistor sot-23 marking L8 Abstract: MMBT6427 H1030 Text: SAMSUNG S EMICONDUCTOR INC MMBT6427 146 D \| 7^4142 □□□7284 *1 \| -fizf- NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	MMBT6427 OT-23 100/jA, T-29-29 transistor sot-23 marking L8 H1030	PDF
2929 transistor Abstract: MMBT6427 MMBTA14 SOT-23 J Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D \| 7^4142 OGt^eT! t \| NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	0075T1 MMBTA14 MMBT6427 T-29-29 OT-23 100jjA, 2929 transistor SOT-23 J	PDF
MMBC1009F1 Abstract: No abstract text available Text: SAM SUNG SEMICONDUCTOR INC MMBC1009F1 l^ E D \| 7*ìfc.4142 00G723? \| NPN EPITAXIAL SILICON TRANSISTOR1~ ^ AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic' Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	00G723? MMBC1009F1 OT-23 MMBC1009F1	PDF

BCX71J Abstract: MMBT5086 Text: SA MS UN G SEMICONDUCTOR INC BCX71J 1ME D \| 7*^4142 000722b t, \| PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	BCX71J MMBT5086 OT-23	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC MMBA812M4 1I,E 0 \| 7^4142 0007233 3 \| PNP EPITAXIAL SILICON TRANSISTOR T - n -o q GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	MMBA812M4 MMBT5086	PDF
IRF9640 Abstract: irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IRF9641 IIRF9640 Text: FEATURES TO -220 0G12EÔ3 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF9640/9641/9642/9643 7^4142 •	OCR Scan	IRF9640/9641 IRFP9240/9241 IRF9640/IRFP9240 -200V IRF9641 /IRFP9241 -150V IRF9642/IRFP9242 IRF9643/IRFP9243 IRF9640 irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IIRF9640	PDF
IRFr010 Abstract: No abstract text available Text: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142	OCR Scan	IRFR010/12/14/15 IRFU010/12/14/15 IRFR010/U010 IRFR01 2/U012 IRFR014/U014 IRFR015/U015 IRFR010/012 IRFR014/015 IRFU010/012 IRFr010	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D \| 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage	OCR Scan	KSB596 KSD526 GQG77fe	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D \| 7^4142 00G723G fl \| PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage	OCR Scan	00G723G MMBA811C7 OT-23	PDF
it4142 Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC 14E D \| ? it,4142 GOOtfllb 0 \| KSA952 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION PT=600 mW High Hfe and LOW VCE<sat) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Symbol Collector-Base Voltage	OCR Scan	KSA952 it4142	PDF
JE2955 Abstract: No abstract text available Text: SAMSUNG ELECTRONICS MJD2955 INC 42E D B 7^4142 OOCHOS'i 3 • SHGK PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • Lead Formed for Surface Mount Applications No Suffix	OCR Scan	MJD2955 JE2955 JE2955	PDF
BCW72 Abstract: MMBT5088 Text: SAMS UN G SEMICONDUCTOR INC BCW72 IME D \| 7*^4142 a007£lì i J[ NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C i Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitfer-Base Voltage Collector Current	OCR Scan	0075IT BCW72 MMBT5088 OT-23 10fjA, 35MHz	PDF
IRFDC Abstract: KSC2682 KSA1142 KSC2688 samsung tv R3307 audio output TRANSISTOR NPN SAMSUNG transistor ksc2682 transistor J 3305 74143 Text: SAMSUNG SEMICONDUCTOR INC KSC2682 IME O \| 7^4142 0GG7Sfc>4 4 N P N EPITAXIAL SILICO N TRAN SISTO R AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSA1142 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	KSC2682 KSA1142 O-126 Vct-30V KSC2688 IRFDC KSA1142 KSC2688 samsung tv R3307 audio output TRANSISTOR NPN SAMSUNG transistor ksc2682 transistor J 3305 74143	PDF

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4142 TS Search Results

4142 TS Result Highlights (5)

4142 TS Price and Stock

Infineon Technologies AG ITS4142N

Infineon Technologies AG BTS4142NHUMA1

Infineon Technologies AG ITS4142NHUMA1

Infineon Technologies AG BTS4142N

4142 TS Datasheets Context Search

Untitled

JB marking transistor

KM28C64A-20

Untitled

8Q transistor

2N6515

transistor

MMBA812M4

Untitled

KSR1006

KSR1011

transistor sot-23 marking L8

2929 transistor

MMBC1009F1

BCX71J

Untitled

IRF9640

IRFr010

Untitled

Untitled

it4142

JE2955

BCW72

IRFDC