transistor BF 414
Abstract: 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414
Text: BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage
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Q62702-F517
transistor BF 414
414 rf transistor
414 transistor
K 414 transistor
BF 414
BF414
BF transistor datasheet
VCE0-30V
marking 414
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Frequency Input
Abstract: No abstract text available
Text: Batch Controller Model 414 Features y Dual relay outputs y Overrun compensation y Remote start/stop y No-signal alarm y Ticket printing with time and date y Displays batch total, preset quantity, flow rate, and accumulated total Overview The 414 Batch Controller is suited to
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20-240V
10-120V
2-28V
RS232/422
DS-25/06/14
Frequency Input
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410, 411, 414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 4 1/4
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KRC410,
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15Y SMD TRANSISTOR
Abstract: SSM2044 free transistor equivalent book 2sc DAC02 PMI SSM-2045 1V120 1N9148 ssm2100 sharp laser diodes SSM2142 SPICE MODEL
Text: SUMER 13555 BISHOP'S COURT BROOKFIELD, WI. 53005 414/784-6641 ~""-"- IPMI SSM AUDIO PRODUCTS AUDIO HANDBOOK VOLUMEl TABLE OF CONTENTS Precision Monolithics Inc. Introduction . 4
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SSM-2013
15Y SMD TRANSISTOR
SSM2044
free transistor equivalent book 2sc
DAC02 PMI
SSM-2045
1V120
1N9148
ssm2100
sharp laser diodes
SSM2142 SPICE MODEL
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5006 OPTICAL
Abstract: No abstract text available
Text: User's Guide SLVU279 – December 2008 TPS54617EVM-414 6-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3
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SLVU279
TPS54617EVM-414
5006 OPTICAL
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410, 411, 414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B M M ・With Built-in Bias Resistors. ・Simplify Circuit Design. D J A 2 G ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC410,
KRC414
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TRANSISTOR BC 413
Abstract: BC414C BC413C bc 357 transistor pin details BC413B BC413 bc 357 transistor BC414B BC414 Transistor BC413C
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 413, B, C BC 414, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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BC414
C-120
Rev160701
TRANSISTOR BC 413
BC414C
BC413C
bc 357 transistor pin details
BC413B
BC413
bc 357 transistor
BC414B
BC414
Transistor BC413C
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Untitled
Abstract: No abstract text available
Text: P048F048T12AL P048F048M12AL PRMTM Regulator • 48 V input V•I ChipTM PRM • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 414 W/in3 • 1.45 MHz switching frequency • Small footprint – 110 W/in2
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P048F048T12AL
P048F048M12AL
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PDF
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Untitled
Abstract: No abstract text available
Text: P048F048T12AL P048F048M12AL PRMTM Regulator • 48 V input V•I ChipTM PRM • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 414 W/in3 • 1.45 MHz switching frequency • Small footprint – 110 W/in2
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P048F048T12AL
P048F048M12AL
P048F048T12AL
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TOP414G
Abstract: TOPSWITCH buck TOP412 self oscillating flyback converter circuit 7474 ic pin configuration TOP414 TOPSWITCH EF20 MBRD620CT MURS120T3
Text: TOP412/414 ® TOPSwitch Family Three-terminal DC to DC PWM Switch Product Highlights Low Cost Replacement for Discrete Switchers • Up to 15 fewer components - cuts cost, increases reliability • Allows for a smaller and lighter solution under 12 mm height, all surface mount components
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OP412/414
OP414
PI-2371-120198
TOP414G
TOPSWITCH buck
TOP412
self oscillating flyback converter circuit
7474 ic pin configuration
TOP414
TOPSWITCH
EF20
MBRD620CT
MURS120T3
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PI-2216-120198
Abstract: TOP414G TOP414 top412g PI-2216 topswitch TOP412 TOPSWITCH buck dpak DIODE 7474 ic pin configuration
Text: TOP412/414 TOPSwitch ® Family Three-terminal DC to DC PWM Switch Product Highlights Low Cost Replacement for Discrete Switchers • Up to 15 fewer components - cuts cost, increases reliability • Allows for a smaller and lighter solution under 12 mm height, all surface mount components
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OP412/414
OP414
PI-2371-120198
PI-2216-120198
TOP414G
TOP414
top412g
PI-2216
topswitch
TOP412
TOPSWITCH buck
dpak DIODE
7474 ic pin configuration
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transistor BF 414
Abstract: No abstract text available
Text: SIEMENS NPN Silicon RF Transistor BF 414 • For low-noise, common base VH F and FM stages Type Marking Ordering Code BF 414 - Q62702-F517 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage
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Q62702-F517
transistor BF 414
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WLFT 404
Abstract: L203 WLFT 405
Text: Thermally conductive foil both sides adhesive - good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request art. WLFT 404 WLFT 404 WLFT 404 WLFT 404 WLFT 414 WLFT 414 no. R25 R50 R100 R200 R25
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100x100
100x200
200x200
100x200
WLFT 404
L203
WLFT 405
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE » Lrl I; 7*^0741 QG01G11 414 H S A K J Silicon NPN Triple Diffused Planar ☆ H ig h Voltage Switching Transistor 2SC4518A Application Exwnpla : Switching Regulator,Lighting Inverter, and General Purpose Electrical Characteristics
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QG01G11
2SC4518A
2SC4518
550min
10Omax
MT-25
T0220)
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Untitled
Abstract: No abstract text available
Text: 7 ^ - 3 / F 6 - 25 R 12 KF EUPEC SEE T> Transistor Transistor 34032=17 0000273 414 « U P E C Thermische Eigenschaften *thjc Elektrische Eigenschaften Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W
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TRANSISTOR BC 413
Abstract: TFK 101 TFK 902 transistor bc 102 TFK 413 BC413 414 transistor TRANSISTOR BC 413 npn TRANSISTOR BC 414 TFK 102
Text: BC 413 - BC 414 Silizium-NPN-Epitaxial -Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharm e Vorstufen Applications: Low noise pre stages Besondere Merkmale: Features: • Rauschmaß < 3 dB • Noise figure < 3 d B • In Gruppen so rtie rt
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1BW TRANSISTOR
Abstract: transistor bw 51 transistor 1BW 25
Text: 7 ^ -3 / F 6 - 25 R12 KF EUPEC SEE Transistor T> Transistor 34032=17 0 000 273 Thermische Eigenschaften *thjc Elektrische Eigenschaften 414 « U P E C Thermal properties DC, pro Baustein / per module DC, pro Zweig / per arm Electrical properties 0,104 °C/W
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D0D0273
34D32CI7
1BW TRANSISTOR
transistor bw 51
transistor 1BW 25
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ELTEC INSTRUMENTS
Abstract: No abstract text available
Text: 414 Series Opposed Dual Pyroelectric IR Detector with Source Follower E LH T E C Manufactured under one or more of the following US patents 3,839.640 - 4.218,620 - 4.326,663 - 4,384207 - 4,437,003 4,441,023 - 4.523,095 .040 SPACING r T 1.0 ELEMENT T.O080
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1000jxm
ELTEC INSTRUMENTS
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BC413
Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
Text: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP
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A53Sba5
D041S64
VPTO52I2
Q62702-C375
Q62702-C375-V1
Q62702-C375-V2
Q62702-C376
Q62702-C376-V1
Q62702-C376-V2
35Li05
BC413
AMI siemens
BC414C
N 413 af
BC414
BC413C
bc 580
BTB 700
siemens marking 411
414c
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BF414
Abstract: transistor BF 414 414 transistor BF 414 marking code B1C TRANSISTOR MARKING CODE "SP" K 414 transistor
Text: TELEFUNKEN ELECTRONIC Û1 C D • ô'tëO D 'Jt. 0 0 Q5 2 G4 fi 7 BF 414 M electronic TO Creative Technologies Silicon PNP Epitaxial Planar RF Transistor Applications: VHF input stages in common base configuration Features: • Small feedback capacitance • Large signal to intermodulation ratio
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bc 471
Abstract: IC 415 BC 241 bc 415 c BC415 BC416C bc 188 BC415B Bc 188 pnp IR LFN
Text: SIE T> SIEM ENS m 023SbGS □□ms'îe S3B « s i e g SIEMENS AKTIENGESELLSCHAF PNP Sil icon AF Transistors • • • • BC 415 BC 416 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 413, BC 414 NPN
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fi23SbGS
Q62702-C377
Q62702-C377-V1
Q62702-C377-V2
Q62702-C377-V3
Q62702-C378
Q62702-C378-V1
Q62702-C378-V2
Q62702-C378-V3
fl535b05
bc 471
IC 415
BC 241
bc 415 c
BC415
BC416C
bc 188
BC415B
Bc 188 pnp
IR LFN
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bc 945
Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549
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O-92-GehÃ
BC238
BC309
O-126
OT-32.
O-220-A.
OT-78
T0-220-B.
bc 945
BC 945 p
BC 948
BC 937
BD 139 N
ic 933 bd
BD135N
bu110
bd 3055
bd135
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2N6517 npn
Abstract: 2N6515 2N6517
Text: SAMSUNG SEMICONDUCTOR INC 2N6517 D J 7^414-2 QOOTII? 3 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • C o llecto r-E m itter Voltage: Vcto=350V • C o lle cto r D issipation: P c m*x =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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2N6517
625mW
T-29-21
2N6515
100mA,
20MHz
300fjs,
2N6517 npn
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230Z
Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
Text: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB
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h427414
T-33-T-
NEL2300
Emitterj17
bHS7414
V3301
-r-33
NEL230353
230Z
V3301
NEL230253
L230C
NEL2301
NEL2302
NEL2303
2SG 111
TRANSISTOR 2SG 111
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