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    4116 ITT Search Results

    4116 ITT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD4116BCPZ Analog Devices 125kSPS 11 Chl SD ADC +/-10V, Visit Analog Devices Buy
    AD4116BCPZ-RL7 Analog Devices 125kSPS 11 Chl SD ADC +/-10V, Visit Analog Devices Buy
    EVAL-AD4116ASDZ Analog Devices Evaluation board Visit Analog Devices Buy
    ADF4116BRUZ-REEL7 Analog Devices SINGLE PLL, 0.55GHz Visit Analog Devices Buy
    ADF4116BRUZ-REEL Analog Devices SINGLE PLL, 0.55GHz Visit Analog Devices Buy
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    4116 ITT Price and Stock

    ITT Interconnect Solutions 132043-4116

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 132043-4116
    • 1 -
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    • 100 $37.48
    • 1000 $25.84
    • 10000 $25.84
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    ITT Interconnect Solutions 121575-4116

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 121575-4116
    • 1 -
    • 10 -
    • 100 $36.07
    • 1000 $36.07
    • 10000 $36.07
    Buy Now

    4116 ITT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    itt 4116

    Abstract: itt capacitors 4116 memory 4116 ITT IC 4027 pin diagram 4116 4027 itt ITT SEMICONDUCTORS ITT4
    Text: ITT4116 16384-Bit Dynamic Random Access Memory 7-8 PHONb: 415 961-8121 TWX: (910) 379-6497 1121 SAN ANTONIO ROAD PALO ALTO, CALIF. 94303 TTT * 1 semiconductors * ITT4116 16384-Bit Dynamic Random Access Memory Features - Industry standard 16 pin DIP - 150 ns access time (ITT 4116-2)


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    PDF ITT4116 16384-Bit ITT4116 6251-121-5E itt 4116 itt capacitors 4116 memory 4116 ITT IC 4027 pin diagram 4116 4027 itt ITT SEMICONDUCTORS ITT4

    SN76477

    Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
    Text: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p


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    PDF 2114L 6116P3 6116LP3 AY-3-1270 AY-3-1350 AY-3-8910 AY-3-8912 AY-5-1230 CA3080E CA3130E SN76477 TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131

    P55i

    Abstract: No abstract text available
    Text: Electronics 8 ~ B i t C M O S M i c r o c o n t r o 11 e r Product Specification OVERVIEW The K S 88C 4116 single-chip 8-bit m icrocontroller is fabricated using a highly advanced C M O S process. Its fast and reliable CPU is based on Zilog's S u pe r8 architecture. W ith six 8-bit I/O ports, a fu ll-duplex serial port, two


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    PDF 16-bit KS88C4116 P55i

    SMS 20 1000A

    Abstract: PU3116 PU3216 PU4116 PU4216 PU4416 PU4516
    Text: P o w er T ra n s is to r A rra y s P U 3 1 1 6 , P U 4 1 1 6 , PU441Ó P U 3116 , P U 4116 , P U 4 4 1 6 P a c k a g e D im e n s io n s PU3116 Silicon NPN Epitaxial Planar Type 20.5max. sT s P o w e r Amplifier, S w itching C o m p l e m e n ta r y P a ir with P U 3 2 1 6 , P U 4 2 1 6 , P U 4 5 1 6


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    PDF PU3116, PU411Ã PU441Ã PU4116, PU4416 PU3216, PU4216, PU4516 PU3116: SMS 20 1000A PU3116 PU3216 PU4116 PU4216 PU4416 PU4516

    4116 ram ic

    Abstract: 4116 ram RAM 4116 4116 dynamic ram 4116 memory M5K4116P 4116 ic ram M5K4116P-3 4116 M5K4116
    Text: MITSUBISHI LSIs M5K 4116 P-2, S-2; P-3, S-3; P-4, S-4 1 6 3 8 4 -B IT 1 6 3 8 4 -W O R D BY 1-B IT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW ) T h is is a fa m ily o f 16 3 8 4 - w o r d by 1 -b it d y n a m ic R A M s , fa b ric a te d w ith th e N -ch an n e l silicon-gate M O S process, and


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    PDF 384-BIT 384-WORD 16-pin 50ns/DIVISION 4116 ram ic 4116 ram RAM 4116 4116 dynamic ram 4116 memory M5K4116P 4116 ic ram M5K4116P-3 4116 M5K4116

    vfd 5x7

    Abstract: JIS-C-6220 T90MS EIS BMW 4116 ram ic 6 digit VFD BCM sdk M66004SP VFd 5X7 DOT M66004
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M66004SP/FP 16-DIGIÃ vfd 5x7 JIS-C-6220 T90MS EIS BMW 4116 ram ic 6 digit VFD BCM sdk M66004SP VFd 5X7 DOT M66004

    information applikation

    Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
    Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond


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    PDF

    JIS-C-6220

    Abstract: 4116 ram DIG03
    Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5x7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segment vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech­ nology. It contains 160 ROM characters and 16 user-defined RAM


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    PDF M66004SP/FP 16-DIGIT M66004 JIS-C-6220. JIS-C-6220) JIS-C-6220 4116 ram DIG03

    LM 4138

    Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
    Text: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,


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    PDF TLCS-870/X 000FC 00102H 00FCH 11110000B 11011000B 11111111B 00001111B 10100110B LM 4138 HL 482 RAM 4163 cd 4162 GFIJ c 4161

    Untitled

    Abstract: No abstract text available
    Text: 0 3.9 O t°10 P.C.B. LAYOUT 7.62 2.54 't io csi -e — & -6 - 5 x 0 0.80 T oo 1.27 CODE DRR4116 1 2 4 8 Tolerances: • • CIRCUIT CHARACTERISTIC POSITION « on I 1 2 3 4 5 6 7 8 9 A B c D E F • • • • • • • • • • • • • • • • • •


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    PDF DRR4116 UL94V-0,

    1F0620

    Abstract: ADF4116
    Text: ANALOG DEVICES PLLFrequencySynthesizer Preliminary Technical Data ÆDF4116/ÆDF4117/ÆDF4118 FEATURES A D F4116: 550 M H z A D F4117: 1.2 GHz A D F4118: 3.0 GHz +2.7 V to +5.5 V Pow er Supply 3-W ire Serial Interface Digital Lock Detect Pow er Down M ode GENERAL


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    PDF F4116: F4117: F4118: DF4116/ DF4117/ DF4118 F4117 F4118 1F0620 ADF4116

    ms-6535

    Abstract: AA51 4116 lf 4116 16k ram 18-PIN BOX225012 TMS4132JDL 3as1 tms 375 CA31
    Text: MOS LSI 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY i- 32,768 X — i- NOVEMBER 1978 1 Organization • 10% Tolerance on All Supplies All Inputs including Clocks TTL-Compatible 18-PIN SIDEBRAZE DUAL-IN-LINE PACKAGE TOP VIEW • Unlatched Three-State Fully TTL-Compatible


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    PDF 768-BIT 18-Pin 300-Mil TMS4132JDL ms-6535 AA51 4116 lf 4116 16k ram BOX225012 TMS4132JDL 3as1 tms 375 CA31

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech­ nology. It contains 160 ROM characters and 16 user-defined RAM


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    PDF M66004SP/FP 16-DIGIT M66004 DIG11 4V4170J,

    11308

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT REV, m PA RT NUM BER REV. SSB-CEL1 0555UWW c E.C.N. NUM BER AND REVISIO N COMMENTS DATE E.C.N. # 1 1 2 7 7 . 1 0 .6 .0 5 E.C.N. # 1 1 3 0 2 . 1.24.06 E.C.N. #11305. 2.2.06 ELECTRO-OPTICAL CHARACTERISTICS TA= 25T PER MODULE lf = BO mA


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    PDF 0555UWW 550nm 180ohms DECL05URE 11308

    2N2386

    Abstract: 2N2386A
    Text: TYPES 2N2386, 2N2386A P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . DL-S 6 8 1 0 9 1 6 , S E P T E M B E R 196 8 AUDIO- TO HIGH-FREQUENCY SMALL-SIGNAL AMPLIFIERS 2N2386A offers the following improvements resulting from process innovation:


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    PDF 2N2386, 2N2386A 2N2386

    to48c

    Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
    Text: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N2432 2N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA


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    PDF 0T17bG2 2N2432 2N2432A 2N4138 2N2432/4138 flT17i a00b5 to48c IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE

    diode zener c25

    Abstract: IGBT FF 300
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


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    PDF OT223) MMG05N60D 318E-04 0E-05 0E-04 4-T19 diode zener c25 IGBT FF 300

    TMS4116

    Abstract: TMS4132
    Text: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible


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    PDF 768-BIT 18-PIN 200ACCESS 4132JD TMS4116 TMS4132

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz


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    PDF AT-41435 AT-41435 Rn/50

    F190

    Abstract: F191 F-190
    Text: 190 54F/74F190 Connection Diagrams Up/Down Decade Counter W ith Preset and Ripple Clock m Oo[T 77| c p c l [7 1 3| RC / d |T Ï 2 l TC Q2 T T T | PL 03 [ 7 7 3 ] P2 Description The ’F190 is a reversible BCD (8421 decade co u n te r featuring synchronous cou ntin g and asynchronous presetting. The preset feature


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    PDF 54F/74F F190 F191 F-190

    M66004SP

    Abstract: 16 Digit 5x7 Segment VFD 4116 ram ic JIS-C-6220 ely transformers 6 digit VFD M66004 vfd 5x7
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF 90isto M66004SP/FP 16-DIGIT -SEG35 DIG15 M66004SP 16 Digit 5x7 Segment VFD 4116 ram ic JIS-C-6220 ely transformers 6 digit VFD M66004 vfd 5x7

    vfd 5x7

    Abstract: DIGITAL VFD CLOCK IC vfd 14 segment 34 pin 4 digit 7 segment display 14 pin 2 digit 7 segment display
    Text: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M 66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech­ nology. It contains 160 ROM characters and 16 user-defined RAM


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    PDF M66004SP/FP 16-DIGIT JIS-C-6220. JIS-C-6220) vfd 5x7 DIGITAL VFD CLOCK IC vfd 14 segment 34 pin 4 digit 7 segment display 14 pin 2 digit 7 segment display

    4116 2n

    Abstract: BFG 99
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC


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    PDF 2N5484 2N9486 4116 2n BFG 99

    Untitled

    Abstract: No abstract text available
    Text: 190 54F/74F190 Connection Diagrams Up/Down Decade Counter With Preset and Ripple Clock Description The ’F190 is a reversible BCD 8421 decade co u n te r fea tu ring synchronous c o u n tin g and asynchronous presetting. The preset feature allow s the ’F190 to be used in program m able dividers. The C ount Enable


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    PDF 54F/74F190