Untitled
Abstract: No abstract text available
Text: This document was generated on 06/22/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 75235-4107 Active GbX Backplane Connector System 1.85mm by 1.85mm Pitch 4-Pair GbX® Backplane Connector System, Right Guide
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PS-75221-999
E29179
10-Wide
20-Wide
PS-75221-999
SD-75235-410
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Untitled
Abstract: No abstract text available
Text: This document was generated on 08/15/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 22-28-4107 Active KK Interconnection System 2.54mm Pitch KK® Header, Breakaway, Vertical, 10 Circuits, 0.76µm Gold Au
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PS-10-07
LR19980
E29179
718/g
42375Series
PS-10-07
SD-42375-001
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Untitled
Abstract: No abstract text available
Text: SHD626000 SHD626000D SHD626000N SHD626000P SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4107, REV. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 300-VOLT, 20 AMP, POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257 PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
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SHD626000
SHD626000D
SHD626000N
SHD626000P
300-VOLT,
O-257
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Untitled
Abstract: No abstract text available
Text: Datasheet Crimp Housings 22-02-4107 2.50mm .098" Pitch Board-In Crimp Housing, For 5394 Terminal, 10 Circuits Status Circuits / Positions Pitch / Center Spacing Rows Product Name Gender Wire Entry Angle INACTIVE / OBSOLETE 10 2.50mm (.098") 1 Board-In Male
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PS-5395-001
P50mm
E29179
LR19980
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Untitled
Abstract: No abstract text available
Text: SHD626000 SHD626000D SHD626000N SHD626000P SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4107, REV. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 300-VOLT, 20 AMP, POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257 PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
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SHD626000
SHD626000D
SHD626000N
SHD626000P
300-VOLT,
O-257
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Untitled
Abstract: No abstract text available
Text: SHD626000 SHD626000D SHD626000N SHD626000P SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4107, REV. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 300-VOLT, 20 AMP, POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257 PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
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SHD626000
SHD626000D
SHD626000N
SHD626000P
300-VOLT,
O-257
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Untitled
Abstract: No abstract text available
Text: 19-4107; Rev 1; 7/11 KIT ATION EVALU E L B AVAILA Dual, 4A/2A, 4MHz, Step-Down DC-DC Regulator with Dual LDO Controllers ♦ 2.5V to 5.5V Input-Voltage Range ♦ Dual-Output Synchronous Buck Regulators ♦ Integrated Switches for 4A and 2A Output Currents
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500kHz
MAX15022ATI/V+
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JESD51-7
Abstract: MAX15022 MAX15022ATI NJT403OP
Text: 19-4107; Rev 1; 7/11 KIT ATION EVALU E L B AVAILA Dual, 4A/2A, 4MHz, Step-Down DC-DC Regulator with Dual LDO Controllers ♦ Sequencing or Coincident/Ratiometric Tracking ♦ Programmable Switching Frequency from 500kHz to 4MHz ♦ Thermal Shutdown and Hiccup-Mode ShortCircuit Protection
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500kHz
28-Pin
MAX15022ATI/V+
JESD51-7
MAX15022
MAX15022ATI
NJT403OP
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transistor GC
Abstract: dual tracking power supply JESD51-7 MAX15022 MAX15022ATI NJT403OP
Text: 19-4107; Rev 0; 5/08 KIT ATION EVALU E L B A IL AVA Dual, 4A/2A, 4MHz, Step-Down DC-DC Regulator with Dual LDO Controllers ♦ Output Voltage Adjustable from 0.6V to VAVIN ♦ Two LDO Controllers ♦ Lossless, Cycle-by-Cycle Current Sensing ♦ External Compensation for Maximum Flexibility
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500kHz
28-Pin
T2855-6
MAX15022
transistor GC
dual tracking power supply
JESD51-7
MAX15022
MAX15022ATI
NJT403OP
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FDK IN 089
Abstract: 4107-B fdk ct FDK 089 g545 4107B 4107
Text: EA 4107 2.98 4½-STELL. DVM, AUFLÖSUNG 10 µV EL. BEREICHSWAHL 200 mV UND 2V IN LO AN MASSE MÖGLICH. inkl. Rahmen EA 03 Abm. 67 x 43 x 15 mm TECHNISCHE DATEN * * * * * * * * * * * * * * * TRIPLEXANZEIGE, KONTRAST EINSTELLBAR, ZIFFERNHÖHE 10,2mm DIMENSIONSANGABEN µmA, µmV, MKΩ ÜBER LÖTBRÜCKEN SETZBAR
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200mV
FDK IN 089
4107-B
fdk ct
FDK 089
g545
4107B
4107
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Untitled
Abstract: No abstract text available
Text: Series ITS ITS 3107 A and ITS 4107 (A) Rear Panel Mount Jam Nut Receptacle No Accessory Threads ITS 31 07 A 20-27 P Y XXX Reverse Bayonet Coupling Mod Code Option (See Table II) Contact Type 31 - Solder 41 - Crimp Alternate Insert Rotation (W, X, Y, Z) Omit for Normal (See Section A)
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diac N413
Abstract: fan7527 application note FAN7527 10K variable resistor N413 transistor DNR10D471 DIODE IN4007 DNR10D DBT-002 EI2820
Text: www.fairchildsemi.com Application Note 4107 Power Factor Correction Controller 1. Introduction FAN7527 is high performance, boundary conduction, current-mode power factor controller specifically designed for use in active preconverters with minimal external components. This device provides the necessary features which are required to significantly enhance poor power factor loads by keeping the ac line
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FAN7527
diac N413
fan7527 application note
10K variable resistor
N413 transistor
DNR10D471
DIODE IN4007
DNR10D
DBT-002
EI2820
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Untitled
Abstract: No abstract text available
Text: Series ITS ITS 3107 A and ITS 4107 (A) Rear Panel Mount Jam Nut Receptacle No Accessory Threads ITS 31 07 A 20-27 P Y XXX Reverse Bayonet Coupling Mod Code Option (See Table II) Contact Type 31 - Solder 41 - Crimp Alternate Insert Rotation (W, X, Y, Z) Omit for Normal (See Section A)
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18UNS
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vr1 100k lin
Abstract: NJT403OP MAX15022ATI transistor GC JESD51-7 MAX15022 equivalent do transistor fb 3306
Text: 19-4107; Rev 0; 5/08 KIT ATION EVALU E L B A IL AVA Dual, 4A/2A, 4MHz, Step-Down DC-DC Regulator with Dual LDO Controllers Features The MAX15022 is a dual-output, pulse-width-modulated PWM , step-down DC-DC regulator with dual LDO controllers. The device operates from 2.5V to 5.5V and
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MAX15022
500kHz
T2855-6
MAX15022
vr1 100k lin
NJT403OP
MAX15022ATI
transistor GC
JESD51-7
equivalent do transistor fb 3306
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4107
Abstract: Diode 4107 APP4107
Text: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS AMPLIFIER AND COMPARATOR CIRCUITS Keywords: op amp, glossary, common-mode rejection, common-mode input resistance, gain-bandwidth product, input bias, input offset, differential mode, output impedance, power dissipation, output voltage
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com/an4107
AN4107,
APP4107,
Appnote4107,
4107
Diode 4107
APP4107
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Sine Wave Generator
Abstract: precision Sine Wave Generator spra179 adrk
Text: Digital SineĆWave Generation Using the TMS320C2xx Application Report 1998 Digital Signal Processing Solutions Printed in U.S.A., July 1998 SPRA179 Digital SineĆWave Generation Using the TMS320C2xx 1998 Application Report Digital Sine-Wave Generation Using the TMS320C2xx
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TMS320C2xx
SPRA179
00aceh
05bc0h
1000h
Sine Wave Generator
precision Sine Wave Generator
spra179
adrk
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8876A
Abstract: 8877A K 4107 fd1791 Fujitsu VCO ceramic MB8877A
Text: FU JI TSU M I C R O E L E C T R O N I C S W D 37 4*17 b2 0QD474b 0 • F M I !«M9<aifp FL O P P Y D IS K V F O The Fujitsu MB 4107 is a variable-frequency oscillator VFO 1C for use In floppy-disk Interfaces. It provides a complete data separation function, with a minimum of external parts and no adjustments, and can be used with a variety of disk controllers.
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0QD474b
GQQ47S3
T-52-38
24-LEAD
DIP-24P
8876A
8877A
K 4107
fd1791
Fujitsu VCO ceramic
MB8877A
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Untitled
Abstract: No abstract text available
Text: HlTACHI/ OPTO ELECTRONICS S l4E I) • MMTbEOS DOieO^l lfl7 B H I T M H L 1 3 2 1 A C /F G /B F /P L /P M , H L P 5 4 0 0 Description inGaAsP LD -r^ m -c n The HL1321AC/FG/BF/DL/DM and HLP5400 are double heterojunction 1.3 (im band InGaAsP laser diodes.
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HL1321AC/FG/BF/DL/DM
HLP5400
HLP5400)
HL1321BF/DL)
HL1321AC/FG/BF/DL/DM,
HLP5400
44Sb20S
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DL44
Abstract: 4107 "pin compatible"
Text: <7 ^ - PRINCETON ADVANCED _ y ^ 1SE D | 73ÛDL44 DDOGODT S | DELAY MODULES, TTL, SINGLE DELAY 14 PIN 1 OUTPUT • TTL and DTL compatible r L .400MAX, • No external components required PAC <XXX • Low profile .010 ,270 MAX, Jü J _ -mu- • Fits standard 14 pin DIP socket
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400MAX.
DL44
4107 "pin compatible"
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410b
Abstract: DL44
Text: <7 ^ - PRINCETON ADVANCED _ y ^ 1SE D | 73ÛDL44 DDOGODT S | DELAY MODULES, TTL, SINGLE DELAY 14 PIN 1 OUTPUT • TTL and DTL compatible r .400MAX, L • No external components required PAC <XXX • Low profile .010 ,270 MAX, Jü J _ • Fits standard 14 pin DIP socket
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400MAX.
410b
DL44
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sc 4106 m
Abstract: No abstract text available
Text: 19-0442; Rev 1; 11/95 A l i l X I A I 350MHz, Ultra-Low-Noise Op Amps The MAX4106/MAX4107 require only 15mA of supply current while delivering a 350MHz or a 300MHz band w idth, respectively. Voltage noise is an ultra-low 0.75nWVFiz, while a low-distortion architecture provides
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350MHz,
MAX4106/MAX4107
MAX4106
MAX4107
350MHz
300MHz
75nWVFiz,
sc 4106 m
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siliconix to-18
Abstract: pad1 PAD10 PAD100 PAD20 PAD50 diode pico-amp PAD1 Siliconix
Text: IflE D SILICONIX INC • ÔSS4735 D013T1Ô 5 ■ PAD1 SER IES ~T-o\-o°i S ilic o n ix in c o r p o r a t e d Low-Lsakage Pico-Amp Diodes - 1 The PAD1 Series of extremely low-leakage diodes provides a superior alternative to conventional diode technology when reverse current leakage
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2S4735
GQ1311Ã
PAD100)
MIL-S-19500.
PAD20
PAD50
PAD100
2S473S
siliconix to-18
pad1
PAD10
diode pico-amp
PAD1 Siliconix
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS 54E 44^205 G012105 STI « H I T 4 HL1323DM/TR InGaAsP LD Description The HL1323DM/TR are double heterojunction structure 1.3 pm band InGaAsP laser diodes for use in optical fiber communication such as LAN, CATV, and U N . Absolute Maximum Ratings (Tç = 25°C)
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G012105
HL1323DM/TR
HL1323DM/TR
HL1323DM
HL1323DM
HL1323TR
HL1323DM:
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Untitled
Abstract: No abstract text available
Text: 87 CO NNECTIO N DIAGRAM PINOUT A ''54H /74H 87 w / / ? 4-BIT TRUE/COMPLEMENT, 14I Vcc s j[T ZERO/ONE ELEMENT î|]u •’ E 01 [7 NC [ 7 DESCRIPTION — The ’87 perform s four operations at its outputs, depending on the state o f the Select inputs Si and S 2 . The outputs can be forced
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74H87PC
54/74H
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