Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4102 TRANSISTOR Search Results

    4102 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4102 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LINFINITY LX8383A

    Abstract: 3845b power supply 3845b 2842ad8 intel 965 motherboard circuit diagram UC2843D CS830 uc3842 switching power supply with 3843b IRF6345
    Text: Automotive Products Guide INSTRUMENTATION - GAUGE DRIVERS GAUGES DRIVEN PART NUMBER MAJOR CS-289 1 CS-3750 1 CS-4101 1 CS-4102 1 CS-4121 1 CS-4172 1 CS-8190 1 CS-8191 1 INPUT MINOR FREQ. PWM SPI CURRENT • DRIVE METHOD 20 mA • • • 2 FEATURES OUTPUT


    Original     		PDF CS-289 CS-4121 CS-4172 CS-8190 CS-8191 CS-4102 CS-4101 CS-3750 CS-8442 CS-8441 LINFINITY LX8383A 3845b power supply 3845b 2842ad8 intel 965 motherboard circuit diagram UC2843D CS830 uc3842 switching power supply with 3843b IRF6345

    Gossen-Metrawatt r2600

    Abstract: Gossen-Metrawatt R2600 R2601 Gossen-Metrawatt 4 regler DIN 4102 B1 STROM RELAIS Gossen Metrawatt Metrawatt
    Text: ER O S M SE ET N CA RA M W IL A LE TT BA U G R2600 / R2601 Elektronischer Regler Verwendung Der Regler R2600 / R2601 ist ein einkanaliger Digitalregler mit Mikroprozessor im kompakten Gehäuse mit Frontmaß B x H 48 × 96 / 96 x 48 mm nach DIN 43700 zum Einbau in Schalttafeln, Frontplatten


    Original     		PDF R2600 R2601 R2601 R0001 R0002 R0003 Gossen-Metrawatt r2600 Gossen-Metrawatt Gossen-Metrawatt 4 regler DIN 4102 B1 STROM RELAIS Gossen Metrawatt Metrawatt

    Gossen-Metrawatt r2400

    Abstract: Gossen-Metrawatt 4 R2400 Gossen-Metrawatt Gossen Gossen-Metrawatt 4 r2400 regler OPTOKOPPLER VDE R0003 am di he ne
    Text: ER O S M SE ET N CA RA M W IL A LE TT BA U G R2400 Elektronischer Regler Verwendung Der Regler R2400 ist ein einkanaliger Digitalregler mit Mikroprozessor im kompakten Gehäuse mit Frontmaß 48 x 48 mm nach DIN 43700 zum Einbau in Schalttafeln, Frontplatten etc.


    Original     		PDF R2400 R2400 R0003 R0001 R0002 Gossen-Metrawatt r2400 Gossen-Metrawatt 4 Gossen-Metrawatt Gossen Gossen-Metrawatt 4 r2400 regler OPTOKOPPLER VDE R0003 am di he ne

    of ic UM 66

    Abstract: AT-41400 AT-41400-GP4 NF50 S21E chip die npn transistor
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth


    Original     		PDF AT-41400 AT-41400 RN/50 of ic UM 66 AT-41400-GP4 NF50 S21E chip die npn transistor

    ME0412

    Abstract: ME0411 ME4102 ME0413 ME4101 transistor 4103 ME4103
    Text: ME 4101 ' ME 4102 • ME 4103 SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES MECHANICAL OUTLINE APPLICATIONS TO-92F • High G ain h frg . 1 0 0 - 6 0 0 @ lm A • Low Noise Pre-am plifier


    OCR Scan     		PDF ME4101 ME4102 ME4103 60Vmin ME0411 ME0412 ME0413 200mW 425mW 20MHz ME4102 ME4101 transistor 4103

    2SA1514

    Abstract: 2SC3906 3906K
    Text: h 7 > y ^ $ /Transistors 2SC3906K/2SC4102 2SC 3906K 2SC 4102 Epitaxial Planar Super/Ultra Mini-Mold NPN Silicon Transistors 1 M M I Z T & Z Vce o = 1 2 0 V ) o \H i0 /D im e n s i o n s (U nit : mm) 2SC3906K Vi>J v':V^|l-r • & £ 2SC4102 2) 2SA1514 K /2 S A 1 579 t =1 > 7" U T' &


    OCR Scan     		PDF 2SC3906K/2SC4102 3906K 2SA1514 2SC3906K 2SC4102 2SC3906

    2sa1514

    Abstract: 2SC4102
    Text: h ~7 > y 7 s £ /Transistors 2SC 3906K 2SC 4102 2SC3906K/2SC4102 Epitaxial Planar NPN Silicon Transistors ¡S iÎŒ iiÎiffl/H ig h Voltage Amp. • # ff^ & E § l/D im e n s io n s Unit : mm 1) S R E 7 & 2SC4102 2SC3906K Vc e o = 1 2 0 V 2 .9 ± 0 .2 2) 2SA1514 K /2 S A 1 579


    OCR Scan     		PDF 2SC3906K/2SC4102 3906K 2SA1514 2SC3906K 2SC4102 2SC4102

    4311 mosfet transistor

    Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
    Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.


    OCR Scan     		PDF 2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072

    smd transistor 2f

    Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
    Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.


    OCR Scan     		PDF Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z

    ME0412

    Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103
    Text: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V


    OCR Scan     		PDF 60Vmin ME0411 ME0412 ME0413 200mW 425mW 8822 TRANSISTOR ME0413 20MHZ 4102 transistor ME4103

    SMD T26

    Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
    Text: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r


    OCR Scan     		PDF AX057 AX078 AX057 SMD T26 S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000

    ME0412

    Abstract: ME0413 ME0411
    Text: M E4101 • ME4102 • ME4103 M SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO FEATURES • H ig h G a i n M ECH AN ICAL O UTLINE APPLICATIO NS h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y


    OCR Scan     		PDF E4101 ME4102 ME4103 O-92F E0411 ME0412 ME0413 Rt30181-6, 8y82M- ME0413 ME0411

    SMP20N20

    Abstract: No abstract text available
    Text: SMP20N20 CfSiEcanix J -m in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) (V) ( ii) Id (A) 200 0.16 20 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25 C Unless Otherwise Noted)


    OCR Scan     		PDF SMP20N20 O-22QAB 10peration SMP20N20

    3906K

    Abstract: No abstract text available
    Text: 2SA1514K/2SA1579 h ~7> V Z $ / T ransistors 2SA1514K 2SA1579 I fc i 7 ^ 1 /7 lx - : H f 2 P N P V ' j 3 > h 7 > y ^ i ' Epitaxial Planar PNP Silicon Transistors ¡gWEEiStiffl/High Voltage Amp. • ÿ i-J f^ Ü H /D im e n s io n s Unit : mm 1) S S4E T 'i.5o VC e o = -1 2 0 V


    OCR Scan     		PDF 2SA1514K/2SA1579 2SA1514K 2SA1579 2SC3906K/2SC4102 3906K

    zener DIODE C25

    Abstract: motorola 4102
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D In su lated G ate B ipolar Transistor N-Channei Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built-in free wheeling diode and a gate protection zener. Fast switching


    OCR Scan     		PDF T0220 MGP2N60D 21A-09 O-220AB zener DIODE C25 motorola 4102

    Untitled

    Abstract: No abstract text available
    Text: National S e mi c o n d u c t o r ~ May 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9400A

    2SK1973

    Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
    Text: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K


    OCR Scan     		PDF /2SA103GK 2411K 2SB1197K 2SD1781K 2SB1051K 2SD1484K 2SA1774 2SC4723 2SC4081 2SA1037AKLN 2SK1973 d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307

    mt 1k

    Abstract: bc146 k 151*c transistor T4104 to-237 micro
    Text: MICRO ELECTRONICS CORP AS DE | t.DT17flfi []0CmL,73 T Miniature Transistors G E N E R A L PURPOSE H TYPE NO. P O L A R IT Y M A X IM U M R A T IN G S V C E SA T FE C ASE Pd (mVU) 'c (mA) V CEO (V) min max ‘c (mA) V CEO (V) max (V) fT N.F. min max f (MHz)


    OCR Scan     		PDF DT17flfi MT-42 mt 1k bc146 k 151*c transistor T4104 to-237 micro

    GSTU4040

    Abstract: STU4030 GSTU4030 GSTU4035 TWX910-9S0-1942
    Text: SÛUARE D CO/ GE NE RA L ^5 ]> • ÔSSSSDfi 3 9 1 6 5 9 0 GENERAL SEMICONDUCTOR . ^ General ^ ^ Semiconductor ^ Industries, Inc. S 95D 0 2 1 8 8 5QUHRE TÌ COMPANY Switch Plus? TRANSISTORS HIGH POWER NPN GGD21ÛÔ / T h e G S T U series is a NPN silicon transistor designed for high speed switching system s. T h is


    OCR Scan     		PDF GG021Ã STU4035 STU4030 TQ-204AA TWX910-950-1942 GSTU4040 GSTU4030 GSTU4035 TWX910-9S0-1942

    BUZ21

    Abstract: No abstract text available
    Text: BUZ21 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 19A, 100V • rDS on) = 0.1 f l • SOA is Power-Dlssipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF BUZ21 BUZ21

    2SC 1885

    Abstract: 2sc low noise
    Text: T ransistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to TO-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications.


    OCR Scan     		PDF O-220, SC-59/Japanese OT-23) 01CL2 2SC 1885 2sc low noise

    chip die npn transistor

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz


    OCR Scan     		PDF AT-41400 AT-41400 Rn/50 chip die npn transistor

    chip die npn transistor

    Abstract: issi 727
    Text: f T 3 B HEWLETT ISSI PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz


    OCR Scan     		PDF AT-41400 AT-41400 Rn/50 chip die npn transistor issi 727

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R 12E 0 | F b3b?5S4 OOa bTOS 5 | IRFF230' IRFF233 CASE 79-05, STYLE 6 TO-39 TQ-205AF M AXIM U M RATINGS Symbol IRFF230 IRFF233 Drain-Source Voltage VDSS 200 150 Vdc Drain-Gate Voltage (Rq s = 1.0 mil) V d GR 200 150 Vdc Rating Gate-Source Voltage


    OCR Scan     		PDF IRFF230' IRFF233 IRFF230 IRFF233 TQ-205AF)