FDD8447L
Abstract: fdd*8447l fdd8447 50a 30v 8.5m MOSFET
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
FDD8447L
fdd*8447l
fdd8447
50a 30v 8.5m MOSFET
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Untitled
Abstract: No abstract text available
Text: FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features General Description ̈ Max rDS on = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer
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FDD4243
FDD4243
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Untitled
Abstract: No abstract text available
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features General Description ̈ Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
FDD8447L
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FDD4243
Abstract: FDD*4243
Text: FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features General Description Max rDS on = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer
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FDD4243
FDD4243
FDD*4243
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fdd*8447l
Abstract: fdd8447 FDD8447L inverter 12 V to 32v dc 40V 14A DPAK
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 54A, 8.5mΩ Features General Description Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
fdd*8447l
fdd8447
inverter 12 V to 32v dc
40V 14A DPAK
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fdd*8447l
Abstract: FDD8447L fdd8447
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 54A, 8.5mΩ Features General Description Max rDS on = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
fdd*8447l
fdd8447
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FDD4243
Abstract: No abstract text available
Text: FDD4243 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mΩ Features General Description Max rDS on = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer
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FDD4243
FDD4243
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FDD8447L
Abstract: 50a 30v 8.5m MOSFET fdd8447 fdd*8447l 40V 14A DPAK
Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5m: Features General Description Max rDS on = 8.5m: at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer
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FDD8447L
50a 30v 8.5m MOSFET
fdd8447
fdd*8447l
40V 14A DPAK
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FDD8447L
Abstract: fdd*8447l fdd8447
Text: FDD8447L N-Channel PowerTrench MOSFET 40V, 54A, 8.5mO General Description Features This N-Channel MOSFET has been produced using Max rDS on = 8.5 mΩ at VGS = 10V, ID = 14A Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss
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FDD8447L
O-252
O-252)
FDD8447L
fdd*8447l
fdd8447
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fdd*8447l
Abstract: fdd8447l
Text: FDD8447L N-Channel PowerTrench MOSFET 40V, 54A, 8.5mO General Description Features This N-Channel MOSFET has been produced using Max rDS on = 8.5 mΩ at VGS = 10V, ID = 14A Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized Bvdss
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FDD8447L
O-252
O-252)
fdd*8447l
fdd8447l
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FDD8447L
Abstract: FDD8447L-F085 fdd*8447l N-Channel 40V MOSFET FDD8447
Text: FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ Features Applications Typ rDS on = 7.0mΩ at VGS = 10V, ID = 14A Inverter Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A Power Supplies Fast Switching Automotive Engine Control
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FDD8447L
O-252)
FDD8447L-F085
fdd*8447l
N-Channel 40V MOSFET
FDD8447
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Abstract: No abstract text available
Text: FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ Features Applications ̈ Typ rDS on = 7.0mΩ at VGS = 10V, ID = 14A ̈ Inverter ̈ Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A ̈ Power Supplies ̈ Fast Switching ̈ Automotive Engine Control
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FDD8447L
O-252)
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40V 14A DPAK
Abstract: 40V 60A MOSFET MDD1751 TO-252 N-channel MOSFET
Text: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 60A @VGS = 10V
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MDD1751
MDD1751
40V 14A DPAK
40V 60A MOSFET
TO-252 N-channel MOSFET
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MDD1752
Abstract: MDD1752RH MDD*1752 40V 14A DPAK n-channel mosfet vgs 3v MAGNACHIP Z 8.0m 40V50A trench mosfet 40V, 50A n mosfet
Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
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MDD1752
MDD1752
MDD1752RH
MDD*1752
40V 14A DPAK
n-channel mosfet vgs 3v
MAGNACHIP
Z 8.0m
40V50A
trench mosfet
40V, 50A n mosfet
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BTS735N1
Abstract: TOP209P ST VIPER 20A bts735 KA1M0680 top210pfi tny255p TOP209PFI TOP223P KA1M0565R
Text: Cross Reference Guide April 2000 Switch Mode Power Supplies Competition ST nearest ST advanced features KA1H0165R VIPer20 1• VIPer in PENTAWATT H.V., PowerSO-10 & DIP-8 KA1H0265R VIPer50 1• VIPer in PENTAWATT H.V. & PowerSO-10; 2• Ron= 5Ω VIPer50 ; Ron= 6Ω (KA1H0265);
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KA1H0165R
VIPer20
PowerSO-10
KA1H0265R
VIPer50
PowerSO-10;
VIPer50)
KA1H0265)
BTS735N1
TOP209P
ST VIPER 20A
bts735
KA1M0680
top210pfi
tny255p
TOP209PFI
TOP223P
KA1M0565R
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Untitled
Abstract: No abstract text available
Text: AOD458 250V,14A N-Channel MOSFET General Description Product Summary The AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS on , Ciss and Crss along
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AOD458
AOD458
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Untitled
Abstract: No abstract text available
Text: AOD458 250V,14A N-Channel MOSFET General Description Product Summary The AOD458 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC -DC applications.By providing low RDS on , Ciss and Crss along
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AOD458
AOD458
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054N40
Abstract: KMB054N40 semiconductor 054n40 KMB054N40D kmb054n40dB
Text: SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power
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KMB054N40DB
Fig11.
Fig12.
054N40
KMB054N40
semiconductor 054n40
KMB054N40D
kmb054n40dB
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kmb054n40da
Abstract: KMB054N40 054n40 semiconductor 054n40 semiconductor KMB 054N40 054n40 da
Text: SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power
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KMB054N40DA
Fig11.
Fig12.
kmb054n40da
KMB054N40
054n40
semiconductor 054n40
semiconductor KMB 054N40
054n40 da
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KMB054N40
Abstract: 054N40 semiconductor 054n40 KMB054N40DC KMB054N40D 40V 14A DPAK *054n40 kmb-054n40
Text: SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power
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KMB054N40DC
Fig10.
Fig11.
Fig12.
KMB054N40
054N40
semiconductor 054n40
KMB054N40DC
KMB054N40D
40V 14A DPAK
*054n40
kmb-054n40
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Untitled
Abstract: No abstract text available
Text: IRLR/U130A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 JA(Max. @ VDS = 100V Lower RDS<oN) : 0.101 ilfly p .)
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IRLR/U130A
7Tb4142
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Untitled
Abstract: No abstract text available
Text: Advanced IRFR/U1 3 0 A Power MOSFET FEATURES B V DSS - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ^ D S o n = lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10 nA (Max.) @ V DS= 1 0 0 V
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IRFR/U130A
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Untitled
Abstract: No abstract text available
Text: A d van ced Power MOSFET IR L R /U 1 3 0 A FEATURES B V DSS - 100 V ^D S o n = 0 .1 2 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 13 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK
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Untitled
Abstract: No abstract text available
Text: IRLR/U130A A d vanced Power MOSFET FEATURES BVDSS — 100 V ♦ Avalanche Rugged Technology 0.1 2Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 13 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS= 1 0 0 V
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IRLR/U130A
101S2
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