Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    40V 12A N-CHANNEL MOS Search Results

    40V 12A N-CHANNEL MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    40V 12A N-CHANNEL MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    252-4L

    Abstract: No abstract text available
    Text: Spec. No. : C449J4 Issued Date : 2009.03.11 Revised Date : Page No. : 1/11 CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET MTC3504BJ4 N-CH P-CH BVDSS 40V -40V ID 12A -9A RDSON MAX 35mΩ 44mΩ Features • Low Gate Charge • Simple Drive Requirement


    Original     		PDF C449J4 MTC3504BJ4 O-252-4L UL94V-0 252-4L

    B35N04

    Abstract: DM-48 MTB35N04J3 MTB35N04 DM-48, 4 pins DT100 B35n
    Text: CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB35N04J3 BVDSS 40V ID 12A RDSON MAX 35mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package


    Original     		PDF C453J3 MTB35N04J3 O-252 UL94V-0 B35N04 DM-48 MTB35N04J3 MTB35N04 DM-48, 4 pins DT100 B35n

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32412LA-S •General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V)


    Original     		PDF ELM32412LA-S ELM32412LA-S P2504BDG O-252 JAN-17-2005

    P2504BDG

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32412LA-S •General description ■Features ELM32412LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 45mΩ (Vgs=4.5V)


    Original     		PDF ELM32412LA-S ELM32412LA-S P2504BDG O-252 JAN-17-2005 P2504BDG

    9467GM

    Abstract: AP9467GM 9467g
    Text: AP9467GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D D ▼ Simple Drive Requirement D D G S S 40V RDS ON 11mΩ ID ▼ Fast Switching Characteristic SO-8 BVDSS 12A S Description D


    Original     		PDF AP9467GM 9467GM 9467GM AP9467GM 9467g

    Untitled

    Abstract: No abstract text available
    Text: AP9467GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D D Simple Drive Requirement RDS ON D D G S S 11m ID Fast Switching Characteristic SO-8 40V 12A S Description D Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9467GM 9467GM

    APM4472

    Abstract: A102 APM4472K STD-020C
    Text: APM4472K N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/12A, RDS ON = 7.5mΩ(typ.) @ VGS= 10V • • • • RDS(ON)= 10.5mΩ(typ.) @ VGS= 4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)


    Original     		PDF APM4472K 0V/12A, APM4472 APM4472 A102 APM4472K STD-020C

    A102

    Abstract: APM4472 APM4472K APM44
    Text: APM4472K N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/12A, D • • • • D D RDS ON = 7.5mΩ(typ.) @ VGS= 10V RDS(ON)= 10.5mΩ(typ.) @ VGS= 4.5V D S Super High Dense Cell Design S S Avalanche Rated Reliable and Rugged G Top View of SOP − 8


    Original     		PDF APM4472K 0V/12A, APM4472 A102 APM4472 APM4472K APM44

    Untitled

    Abstract: No abstract text available
    Text: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF STN454D STN454D O-252 O-251 0V/12 O-252 O-251

    STN454D

    Abstract: 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W
    Text: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF STN454D STN454D O-252 O-251 0V/12 O-252 O-252-2L 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W

    Untitled

    Abstract: No abstract text available
    Text: STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF STN4186D STN4186D STN454D O-252 O-251 0V/20 0V/15 O-252 O-251

    AOD609

    Abstract: AOD609L aod609 datasheet
    Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609/L uses advanced trench technology MOSFETs to provide excellent R DS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


    Original     		PDF AOD609 AOD609/L AOD609 AOD609L -AOD609L O-252-4L aod609 datasheet

    AOD609

    Abstract: aod609 datasheet
    Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


    Original     		PDF AOD609 AOD609 O-252-4L aod609 datasheet

    Untitled

    Abstract: No abstract text available
    Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.


    Original     		PDF AOD609 AOD609 O-252-4L

    12A 650V MOSFET

    Abstract: 6A 650V MOSFET
    Text: SSFP12N65 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 650V Simple Drive Requirement ID25 = 12A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP12N65 00A/s ISD12A di/dt200A/S width300S; 12A 650V MOSFET 6A 650V MOSFET

    SSFP12N60

    Abstract: No abstract text available
    Text: SSFP12N60 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 600V Simple Drive Requirement ID25 = 12A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP12N60 00A/s ISD12A di/dt200A/S width300S; SSFP12N60

    Untitled

    Abstract: No abstract text available
    Text: SSFP20N20 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 200V Simple Drive Requirement ID25 = 20A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP20N20 00A/s ISD18A di/dt150A/S width300S;

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


    Original     		PDF KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA

    MDD9754

    Abstract: MDD-9754
    Text: Preliminary – Subject to change without notice Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability


    Original     		PDF MDD9754 MDD9754â MDD-9754

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • •


    OCR Scan     		PDF 2SK2507 100/j 272//H

    2SK2507

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2


    OCR Scan     		PDF 2SK2507 212juÃ

    2SK2507

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2


    OCR Scan     		PDF 2SK2507 212juà 2SK2507

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2507 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 0 ± 0 .3


    OCR Scan     		PDF 2SK2507 034fl 20ki2)

    Untitled

    Abstract: No abstract text available
    Text: E C ELECTRONICS INC 6427525 N E C "ta ELECTRONICS INC ßF|t,4a7sas □oiñ'íbb d | ~ 98D MOS F I E L D 18966 EFFECT Ü -f-'l'J-a TRANSISTOR ELECTHQN DEVICE 2 S K 8 1 1 FAST SWITCHING N - C H A N N E L S I L I C O N P OWE R MOS F E T Features PACKAGE DIMENSIONS


    OCR Scan     		PDF T-39-11 73ANS7Z3