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    cep603al

    Abstract: CEB603AL Cep603al Transistor CEP603A
    Text: CEP603AL/CEB603AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 2 5 A , R ds on =22 iti Q @ Vgs= 1 0V. @ Vgs=4.5V. R ds (ON)=40itiQ • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.


    OCR Scan     		CEP603AL/CEB603AL 22itiQ 40itiQ O-220 O-263 to-263 to-220 cep603al CEB603AL Cep603al Transistor CEP603A PDF

    251C

    Abstract: CEM8435A
    Text: March 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -30V, -7.9A, R ds on =24itiQ R ds(on)=40itiQ @Vgs=-1 0V. @Vgs=-4.5V. D D D • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		CEM8435A 40itiQ 251C CEM8435A PDF