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    40GHZ TRANSISTOR Search Results

    40GHZ TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    40GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00

    EC2612

    Abstract: ec2612 pHEMT MAR 618 transistor
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 pHEMT MAR 618 transistor

    ec2612 phemt

    Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
    Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 phemt pHEMT transistor 30GHz MAR 618 transistor LS 9814

    ec2612 pHEMT

    Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26128099 ec2612 pHEMT pHEMT transistor 30GHz TRANSISTOR 30GHZ

    pHEMT transistor 30GHz

    Abstract: EC2612 ec2612 pHEMT 158467
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 pHEMT transistor 30GHz ec2612 pHEMT 158467

    02VO

    Abstract: CHA4094
    Text: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA4094 36-40GHz CHA4094 DSCHA40949025 02VO

    Untitled

    Abstract: No abstract text available
    Text: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication


    Original     		PDF CHA2097a 20-40GHz CHA2097a DSCHA20978021-21

    HEMT 36 ghz transistor

    Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
    Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		PDF EC2827 40GHz EC2827 18GHz 40GHz DSEC28277003 HEMT 36 ghz transistor low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor

    Untitled

    Abstract: No abstract text available
    Text: CHA2097a 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The


    Original     		PDF CHA2097a 20-40GHz CHA2097a 20-40GHz 14dBm DSCHA20978021

    Untitled

    Abstract: No abstract text available
    Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147-27

    CHA2395

    Abstract: No abstract text available
    Text: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA2395 36-40GHz CHA2395 DSCHA23952240 -28-Aug

    c 4977 transistor

    Abstract: transistor on 4436
    Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 c 4977 transistor transistor on 4436

    CHA2395

    Abstract: No abstract text available
    Text: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA2395 36-40GHz CHA2395 DSCHA23952240 -28-Aug

    CHA4094

    Abstract: No abstract text available
    Text: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA4094 36-40GHz CHA4094 DSCHA40949349

    Untitled

    Abstract: No abstract text available
    Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


    Original     		PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147-27

    Untitled

    Abstract: No abstract text available
    Text: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication


    Original     		PDF CHA2097a 20-40GHz CHA2097a DSCHA20978021-21

    ec2612 phemt

    Abstract: EC2612
    Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original     		PDF EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 ec2612 phemt

    CHA2097

    Abstract: No abstract text available
    Text: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband threestage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip


    Original     		PDF CHA2097a 20-40GHz CHA2097a DSCHA20978021 CHA2097

    c 4977 transistor

    Abstract: No abstract text available
    Text: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT


    Original     		PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 c 4977 transistor

    CHA2395

    Abstract: transistor BP 109
    Text: CHA2395 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT


    Original     		PDF CHA2395 36-40GHz CHA2395 DSCHA23952240 -28-Aug transistor BP 109

    transistor on 4436

    Abstract: c 4977 transistor
    Text: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT


    Original     		PDF CHA2095a 36-40GHz CHA2095a DSCHA20958147 transistor on 4436 c 4977 transistor

    Untitled

    Abstract: No abstract text available
    Text: GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression P1dB : 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to


    Original     		PDF HMC1127 HMC112085-028 100pF 3-19-2015-A D13085-0-5/15

    Untitled

    Abstract: No abstract text available
    Text: united monolithic semiconductors . a r*L i a A n n ;y a UrlA4Uy4 a « - 36-40GHz High Power Amplifier GaAs Monolithic Microwave 1C Vq Description Vd1,2 Vd3 The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from


    OCR Scan     		PDF 36-40GHz CHA4094 DSCHA40949025

    super bonder 325

    Abstract: ls40f
    Text: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz


    OCR Scan     		PDF EC1840 EC2827 18GHz 40GHz 40GHz. 25nmn EC1840-99A/00 super bonder 325 ls40f