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    40GHZ POWER AMPLIFIER Search Results

    40GHZ POWER AMPLIFIER Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    40GHZ POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40ghz optical modulator driver

    Abstract: KGM8011
    Text: Electronic Components KGM8011 ODHKGM8011-03 Issue Date: Jan. 23, 2004 Preliminary 40GHz Broadband Amplifier FEATURES • • • • • • • • • 100kHz 40GHz Bandwidth 19dB Gain 3.0V Eye Output 0.84W Power Consumption Single Power Supply Small Size Package


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    KGM8011 ODHKGM8011-03 40GHz 100kHz 40Gb/s KGM8011 100kHz 40ghz optical modulator driver PDF

    NN12

    Abstract: P35-5140-000-200 40GHz power amplifier
    Text: Data sheet HEMT MMIC Broadband Amplifier, 20 - 40GHz Features • 21dBm Typical Saturated Output Power • 20dB Typical Gain The P35-5140-000-200 is a high performance 20-40GHz Gallium Arsenide amplifier. This product is intended for use in military and mm-Wave Communication systems.


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    40GHz 21dBm P35-5140-000-200 20-40GHz 200mA P35-5140-000-200 Id234 400mA 462/SM/02820/200 NN12 40GHz power amplifier PDF

    NN12

    Abstract: P35-5140-000-200 MARCONI power
    Text: P35-5140-000-200 HEMT MMIC BROADBAND AMPLIFIER, 20 - 40GHz Features • • • • 21dBm Typical Saturated Output Power 20dB Typical Gain 1.72 x 0.76mm Die Size Low Current Typically <200mA @4.5V Description The P35-5140-000-200 is a high performance 20-40GHz Gallium Arsenide amplifier. This product is intended for


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    P35-5140-000-200 40GHz 21dBm 200mA P35-5140-000-200 20-40GHz Ma-00906 462/SM/02820/200 400mA NN12 MARCONI power PDF

    40GHz power amplifier

    Abstract: DIE BONDER NN12 P35-5140-000-200 80um MARCONI power
    Text: Marconi Optical Components P35-5140-000-200 HEMT MMIC Broadband Amplifier, 20 - 40GHz Features • 21dBm Typical Saturated Output Power · 20dB Typical Gain · 1.72 x 0.76mm Die Size · Low Current Typically <200mA @4.5V Description The P35-5140-000-200 is a high performance 20-40GHz Gallium Arsenide amplifier. This product is intended for use in


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    P35-5140-000-200 40GHz 21dBm 200mA P35-5140-000-200 20-40GHz Id234 400mA 40GHz power amplifier DIE BONDER NN12 80um MARCONI power PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA3093c RoHS COMPLIANT 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial


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    CHA3093c 20-40GHz CHA3093c 20-40GHz 20dBm DSCHA30932158 -07-June-02 PDF

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    Abstract: No abstract text available
    Text: CHA3093c RoHS COMPLIANT 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial


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    CHA3093c 20-40GHz CHA3093c 20-40GHz 20dBm DSCHA30932158 -07-June-02 PDF

    02VO

    Abstract: CHA4094
    Text: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


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    CHA4094 36-40GHz CHA4094 DSCHA40949025 02VO PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA3093c RoHS COMPLIANT 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication


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    CHA3093c 20-40GHz CHA3093c 20-40GHz 20dBms DSCHA30932158 -07-June-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA3093c 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication


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    CHA3093c 20-40GHz CHA3093c 20-40GHz 20dBm DSCHA30932158 -07-June-02 PDF

    CHA5297

    Abstract: g1029
    Text: CHA5297 37-40GHz High Power Amplifier GaAs Monolithic Microwave IC Vd1 Description The CHA5297 is a three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the


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    CHA5297 37-40GHz CHA5297 37-40GHz 28dBm DSCHA52972149 29-May-02 g1029 PDF

    CHA5294

    Abstract: No abstract text available
    Text: CHA5294 RoHS COMPLIANT 30-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5294 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


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    CHA5294 30-40GHz CHA5294 30-40GHz 22dBm 500mA DSCHA52948205 PDF

    EMM5835X

    Abstract: ED-4701 16-S-437-60
    Text: EMM5835X Ka-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=27.0dBm typ. ・High Linear Gain: GL=21.0dB (typ.) ・Broad Band: 37~40GHz ・Impedance Matched Zin/Zout=50Ω DESCRIPTION The EMM5835X is a MMIC amplifier that contains a four-stage


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    EMM5835X 40GHz EMM5835X 40GHz 1906B, ED-4701 16-S-437-60 PDF

    CHA4094

    Abstract: No abstract text available
    Text: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


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    CHA4094 36-40GHz CHA4094 DSCHA40949349 PDF

    40GHz power amplifier

    Abstract: CHA5294
    Text: CHA5294 RoHS COMPLIANT 30-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5294 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.


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    CHA5294 30-40GHz CHA5294 30-40GHz 22dBm 500mA DSCHA52948205 40GHz power amplifier PDF

    KGM8011

    Abstract: 40ghz optical modulator driver
    Text: Electronic Components KGM8011 ODHKGM8011-01 Issue Date:Mar. 10, 2003 Preliminary 40GHz Broadband Amplifier FEATURES • • • • • • • • • 100 KHz – 40 GHz Bandwidth 19dB Gain 3.0V Eye Output 0.84W Power Consumption Single Power Supply Small Size Package


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    KGM8011 ODHKGM8011-01 40GHz 40Gb/s KGM8011 100KHz 40ghz optical modulator driver PDF

    63826

    Abstract: 52887 52854 17-311-1 150651
    Text: CHA3093c 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF


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    CHA3093c 20-40GHz CHA3093 20-40GHz 20dBm DSCHA30930207 -26-Jul-00 63826 52887 52854 17-311-1 150651 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA5292a 37-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5292a is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF


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    CHA5292a 37-40GHz CHA5292a 37-40GHz 24dBm DSCHA52922149 29-May-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: October 1, 2008 Electronic Components KGA8011 ODHKGA8011-04 Ultra Broadband Distributed Amplifier FEATURES • High Gain : 14dB • High Output Power : 14dBm • : >40GHz Broadband DESCRIPTION KGA8011 is a broadband distributed amplifier using 0.1um-gate GaAs P-HEMT and coplanar waveguide


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    KGA8011 ODHKGA8011-04 14dBm 40GHz KGA8011 40Gb/s PDF

    40ghz optical modulator driver

    Abstract: KGA8011
    Text: October 1, 2008 Electronic Components KGA8011 ODHKGA8011-04 Ultra Broadband Distributed Amplifier FEATURES • High Gain : 14dB • High Output Power : 14dBm • Broadband : >40GHz DESCRIPTION KGA8011 is a broadband distributed amplifier using 0.1um-gate GaAs P-HEMT and coplanar waveguide


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    KGA8011 ODHKGA8011-04 14dBm 40GHz KGA8011 40Gb/s 40ghz optical modulator driver PDF

    Untitled

    Abstract: No abstract text available
    Text: MMA030AA DC to 45GHz Broadband MMIC Low-Noise Amplifier Features • Integrated PLFX technology: ▪ Allows use of less-expensive coil • Very low power dissipation: ▪ 4.5V, 85mA 383mW ▪ High drain efficiency (40dBm/W) • Excellent 18-40GHz performance:


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    MMA030AA 45GHz 383mW) 40dBm/W) 18-40GHz 1640x920um 3A001 MMA030AA SMD-00167 PDF

    PPH15

    Abstract: 40GHz power amplifier United Monolithic Semiconductors
    Text: PRESS RELEASE New Products Announcement Date : Monday, July 16, 2001 Author : Marketing group United Monolithic Semiconductors releases a new high gain 4-stage, 20-40GHz medium power amplifier To Business editores/High tech Writers th ORSAY , July 16 , 2001


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    20-40GHz CHA3093c, 40GHz. D-89081 PPH15 40GHz power amplifier United Monolithic Semiconductors PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA5094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5094 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.


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    CHA5094 36-40GHz CHA5094 36-40GHz 28dBm DSCHA50940061-01-Marc-00 PDF

    40GHz power amplifier

    Abstract: No abstract text available
    Text: CHA5094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5094 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds.


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    CHA5094 36-40GHz CHA5094 36-40GHz 28dBm DSCHA5094061-01-Marc-00 40GHz power amplifier PDF

    Sumitomo 1295SA

    Abstract: 1295SA 283E03 S2125 S1125 P125D
    Text: AMMC-6442 37 - 40 GHz 1W Power Amplifier Data Sheet Description Features The AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides typical 30 dBm of output power P-1dB and 23dB of


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    AMMC-6442 AMMC-6442 37GHz 40GHz. 37dBm 18dBm 30dBm 37dBm 1295SA Sumitomo 1295SA 283E03 S2125 S1125 P125D PDF