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    40AT Search Results

    40AT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3140AT/B Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS Visit Rochester Electronics LLC Buy
    CA3140AT Rochester Electronics LLC Operational Amplifier, 1 Func, 5000uV Offset-Max, BIMOS, MBCY8, METAL, CAN-8 Visit Rochester Electronics LLC Buy
    74FCT240ATQG Renesas Electronics Corporation Octal Buffer/Line Driver Visit Renesas Electronics Corporation
    74FCT162240ATPA Renesas Electronics Corporation 16-BIT BUFFER/LINE DRIVER Visit Renesas Electronics Corporation
    74FCT16240ATPA Renesas Electronics Corporation 16-BIT BUFFER/LINE DRIVER Visit Renesas Electronics Corporation
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    40AT Price and Stock

    Microchip Technology Inc 25AA040AT-I-OT

    IC EEPROM 4KBIT SPI SOT23-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 25AA040AT-I-OT Digi-Reel 12,160 1
    • 1 $0.52
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    25AA040AT-I-OT Reel 12,000 3,000
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    YAGEO Corporation 5.0SMDJ40A-TR13

    5.0SMDJ, DO-214AB, 40V, 64.5V, R
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    DigiKey 5.0SMDJ40A-TR13 Digi-Reel 3,985 1
    • 1 $1.09
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    5.0SMDJ40A-TR13 Cut Tape 3,985 1
    • 1 $1.09
    • 10 $0.681
    • 100 $1.09
    • 1000 $0.31283
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    onsemi AS0140AT2C00XUSM0-TRBR

    1MP 1/4 CIS SOC
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    DigiKey AS0140AT2C00XUSM0-TRBR Digi-Reel 3,600 1
    • 1 $23.75
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    AS0140AT2C00XUSM0-TRBR Cut Tape 3,600 1
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    AS0140AT2C00XUSM0-TRBR Reel 2,000 2,000
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    Avnet Silica AS0140AT2C00XUSM0-TRBR 37 Weeks 2,000
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    EBV Elektronik AS0140AT2C00XUSM0-TRBR 53 Weeks 2,000
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    ROHM Semiconductor RBR3LAM40ATFTR

    DIODE SCHOTTKY 40V 3A PMDTM
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    DigiKey RBR3LAM40ATFTR Reel 3,000 3,000
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    CoreStaff Co Ltd RBR3LAM40ATFTR 5,110
    • 1 $0.534
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    • 100 $0.141
    • 1000 $0.088
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    Diodes Incorporated 74LVC240AT20-13

    IC BUFFER INVERT 3.6V 20TSSOP
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    DigiKey 74LVC240AT20-13 Reel 2,500 2,500
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    74LVC240AT20-13 Cut Tape 2,500 1
    • 1 $0.56
    • 10 $0.477
    • 100 $0.3563
    • 1000 $0.21634
    • 10000 $0.21634
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    74LVC240AT20-13 Digi-Reel 2,500 1
    • 1 $0.56
    • 10 $0.477
    • 100 $0.3563
    • 1000 $0.21634
    • 10000 $0.21634
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    Avnet Americas 74LVC240AT20-13 Reel 2,500 8 Weeks 2,500
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    Avnet Silica 74LVC240AT20-13 10 Weeks 2,500
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    New Advantage Corporation 74LVC240AT20-13 2,500 1
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    Find more 40AT price and stock on Findchips.com

    40AT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7905

    Abstract: 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 BUK7105-40ATE BUK7905-40ATE
    Text: BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and


    Original     		PDF BUK71/7905-40ATE BUK7105-40ATE OT426 BUK7905-40ATE OT263B O-220) 7905 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905

    Untitled

    Abstract: No abstract text available
    Text: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK7105-40ATE BUK7105-40ATE

    BUK7907-40ATC

    Abstract: No abstract text available
    Text: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK7907-40ATC BUK7907-40ATC

    BUK9907-40ATC

    Abstract: MQ101
    Text: BUK9907-40ATC TrenchPLUS logic level FET Rev. 01 — 28 January 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS


    Original     		PDF BUK9907-40ATC M3D745 BUK9907-40ATC OT263B. MQ101

    BUK9107-40ATC

    Abstract: MBL306
    Text: BUK9107-40ATC TrenchPLUS logic level FET Rev. 03 — 22 January 2002 Product data M3D322 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS


    Original     		PDF BUK9107-40ATC M3D322 BUK9107-40ATC OT426 MBL306

    M2S56D20

    Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
    Text: DDR SDRAM Rev.1.2 MITSUBISHI LSIs M2S56D20/ 30/ 40ATP Jun. '01 Preliminary 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S56D20ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit,


    Original     		PDF M2S56D20/ 40ATP M2S56D20ATP 216-word M2S56D30ATP 608-word M2S56D40ATP 304-word 16-bit, M2S56D20/30/40ATP M2S56D20

    M2S56D20

    Abstract: M2S56D20ATP M2S56D30ATP
    Text: MITSUBISHI LSIs DDR SDRAM Rev.1.44 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Mar. '02 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,


    Original     		PDF M2S56D20/ 40ATP -75AL, 40AKT M2S56D20ATP 16777216-word M2S56D30ATP 8388608-word M2S56D20

    Untitled

    Abstract: No abstract text available
    Text: BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK9107-40ATC BUK9107-40ATC

    Untitled

    Abstract: No abstract text available
    Text: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK7907-40ATC BUK7907-40ATC

    Untitled

    Abstract: No abstract text available
    Text: Sparkle Power Inc. A Leading Power Supply manufacturer Web site: www.sparklepower.com FSP200-40AT I221 200 Watts Flex AT Switching Power Supply Features Specification • • High efficiency and reliability • Internal 12V DC fan included • Noise Killer (Thermal fan speed control function)


    Original     		PDF FSP200-40AT 120mV

    BUK9107-40ATC

    Abstract: C2532
    Text: BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK9107-40ATC BUK9107-40ATC C2532

    09874

    Abstract: No abstract text available
    Text: BUK71/7907-40ATC TrenchPLUS standard level FET Rev. 01 — 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS


    Original     		PDF BUK71/7907-40ATC BUK7107-40ATC OT426 BUK7907-40ATC OT263B O-220AB) 09874

    Untitled

    Abstract: No abstract text available
    Text: BUK7107-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 6 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK7107-40ATC BUK7107-40ATC

    Untitled

    Abstract: No abstract text available
    Text: BUK7905-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK7905-40ATE BUK7905-40ATE

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs DDR SDRAM Rev.1.43 M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10 M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10 Jan. '01 256M Double Data Rate Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,


    Original     		PDF M2S56D20/ 40ATP -75AL, 40AKT M2S56D20ATP 16777216-word M2S56D30ATP 8388608-word

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type TrenchPLUS standard level FET KUK7105-40ATE 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Integrated temperature sensor 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Standard level compatible. +0.1 0.81-0.1 2.54 2.54


    Original     		PDF KUK7105-40ATE O-263

    M2S56D20

    Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
    Text: DDR SDRAM E0338M10 Ver.1.0 (Previous Rev.1.54E) Jan. '03 CP(K) M2S56D20/ 30/ 40ATP M2S56D20/ 30/ 40AKT 256M Double Data Rate Synchronous DRAM DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,


    Original     		PDF E0338M10 M2S56D20/ 40ATP 40AKT M2S56D20ATP 16777216-word M2S56D30ATP 8388608-word M2S56D40ATP/ M2S56D20 M2S56D40ATP

    Untitled

    Abstract: No abstract text available
    Text: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK9907-40ATC BUK9907-40ATC

    M2S56D20

    Abstract: M2S56D20ATP M2S56D30ATP M2S56D40ATP
    Text: DDR SDRAM E0338M10 Ver.1.0 (Previous Rev.1.54E) Jan. '03 CP(K) M2S56D20/ 30/ 40ATP M2S56D20/ 30/ 40AKT 256M Double Data Rate Synchronous DRAM DESCRIPTION M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,


    Original     		PDF E0338M10 M2S56D20/ 40ATP 40AKT M2S56D20ATP 16777216-word M2S56D30ATP 8388608-word M2S56D40ATP/ M2S56D20 M2S56D40ATP

    M2S28D20

    Abstract: M2S28D20ATP M2S28D30ATP M2S28D40ATP
    Text: MITSUBISHI LSIs DDR SDRAM Rev.0.1 M2S28D20/ 30/ 40ATP Jun,'00 Preliminary 128M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S28D20ATP is a 4-bank x 8388608-word x 4-bit, M2S28D30ATP is a 4-bank x 4194304-word x 8-bit,


    Original     		PDF M2S28D20/ 40ATP M2S28D20ATP 8388608-word M2S28D30ATP 4194304-word M2S28D40ATP 2097152-word 16-bit, M2S28D20/30/40ATP M2S28D20

    BUK7107-40ATC

    Abstract: No abstract text available
    Text: BUK7107-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 6 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK7107-40ATC BUK7107-40ATC

    BUK7905-40ATE

    Abstract: No abstract text available
    Text: BUK7905-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK7905-40ATE BUK7905-40ATE

    BUK9907-40ATC

    Abstract: No abstract text available
    Text: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK9907-40ATC BUK9907-40ATC

    Untitled

    Abstract: No abstract text available
    Text: circuitassembly.com Driven by design TM IDT Ultra ATA66 S ocket with Internal G round B us SPECIFICATIONS Meets: SFF-8049 ENVIRONMENTAL Temperature Range: -55°C to +105°C MECHANICAL CA-40ATAS-CPin#20 Molded/no PT* 101 201 301 Pin#20 Open/with PT* 110


    OCR Scan     		PDF ATA66 SFF-8049 UL94V-0 CA-40ATAS-CPin SR40ATAS CA-610191