Untitled
Abstract: No abstract text available
Text: Ultrafast Rectifier FFA40UP35S tm Features 40A, 350V Ultrafast Rectifier • High Speed Switching, rrt < 55ns @ IF = 40A • High Reverse Voltage and High Reliability The FFA40UP35S is utrafast rectifier with low forward voltage drop. It is silicon nitride passivated ion-implanted epitaxial planar
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FFA40UP35S
FFA40UP35S
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IXGH20N60AU1
Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient
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N60U1
N60AU1
O-247
IXGH20N60U1
IXGH20N60AU1
IXGH20N60AU1
IXGH20N60U1
20N60AU1
*GH20N60AU1
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20N60A
Abstract: D-68623 20N60U1 20N60AU
Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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N60U1
N60AU1
D-68623
20N60U1
20N60AU1
20N60A
20N60U1
20N60AU
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Untitled
Abstract: No abstract text available
Text: APTGU40DH60T Asymmetrical - Bridge PT IGBT Power Module VCES = 600V IC = 40A @ Tc = 80°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Power MOS 7 Punch Through PT IGBT - Low conduction loss
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APTGU40DH60T
200kHz
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h40t60
Abstract: IHW40N60T PG-TO-247-3-21
Text: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications
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IHW40N60T
PG-TO-247-3-21
h40t60
IHW40N60T
PG-TO-247-3-21
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IHW40T60 q Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum junction temperature 175°C Short circuit withstand time 5s
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IHW40T60
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Aromat relay lr42758
Abstract: lr26550 LR42758 Aromat lr26550 LR68004 Aromat lr44444 Aromat lr26550 datasheet lr44444 Aromat lR44444 relays E43149
Text: Panasonic Electric Works Corp. of America 629 Central Avenue, New Providence, NJ 07974-1526 Tel: 908 464-3550 Standards Chart Standards Chart Mechanical Relays Item SX (ASX) UL/C-UL (Recognized) CSA (Certified) File No. Contact rating File No. Contact rating
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LR26550
E43149
E43149
Aromat relay lr42758
lr26550
LR42758
Aromat lr26550
LR68004
Aromat lr44444
Aromat lr26550 datasheet
lr44444
Aromat lR44444 relays
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h30t60
Abstract: IHW30N60T 600v 30a IGBT pspice high frequency igbt S-108 PG-TO-247-3-21
Text: Soft Switching Series IHW30N60T q Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications
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IHW30N60T
PG-TO-247-3-21
h30t60
IHW30N60T
600v 30a IGBT
pspice high frequency igbt
S-108
PG-TO-247-3-21
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Untitled
Abstract: No abstract text available
Text: Soft Switching Series IHW30N60T q Low Loss DuoPack : IGBT in TRENCHSTOP technology with optimised diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
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IHW30N60T
PG-TO247-3
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IkW30N60T
Abstract: No abstract text available
Text: TRENCHSTOP Series IKW30N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C
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IKW30N60T
IkW30N60T
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKW50N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKW50N60T
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKB20N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKB20N60T
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Untitled
Abstract: No abstract text available
Text: IKP20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKP20N60T
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Untitled
Abstract: No abstract text available
Text: IKW20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKW20N60T
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k15t60
Abstract: FAST RECOVERY DIODE 200ns 8A 40V IKP15N60T PG-TO-220-3-1 marking k15t60 ikp15n60
Text: IKP15N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP15N60T
k15t60
FAST RECOVERY DIODE 200ns 8A 40V
IKP15N60T
PG-TO-220-3-1
marking k15t60
ikp15n60
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C
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IKW75N60T
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKP15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C
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IKP15N60T
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKB15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C
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IKB15N60T
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IRF420
Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350
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IRF450
IRF452
IRF440
IRF442
VNP002A*
VN5001A
IRF430
VN5002A
IRF432
IRF420
IRF420
IRF422
IRF430
IRF432
IRF440
IRF442
IRF450
IRF452
VN5001A
VN5002A
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VN64GA
Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
VN64GA
1rf820
IRF740
VN1001A
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
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C2625
Abstract: No abstract text available
Text: APT50GF60B2RD APT50GF60LRD 600V 80A A dvanced row er TECHN O LO G Y APT50GF60B2RD Fast IGBT& FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free wheeling ultraFast Recovery Epitaxial Diode FRED offers superior
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APT50GF60B2RD
APT50GF60LRD
APT50GF60B2RD
20KHz
APT50GF60LRD
APT50GF60B2RD/LRD
Collecto59)
O-264
C2625
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VN64GA
Abstract: 1rf820 irf150 IRF340 IRF742 diode 343 18a IRF740 IRF823 SILICONIX IRF740 IRF440
Text: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v iw i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220 Siliconix
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O-220
O-237
O-202
IRF450
IRF840
IRF440
VN5001D/IRF830
VNP002A*
IRF820
VN5001A/IRF430
VN64GA
1rf820
irf150
IRF340
IRF742
diode 343 18a
IRF740
IRF823
SILICONIX IRF740
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irf740 equivalent
Abstract: MTM1N100 mtm5n35 tl 741 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | I I I | ' r r r 's ' < O Ò ' ' ' lO ' I O O I I I P ' ' ' ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I j j CO 00 CO CO j j ' I I I I OOOO ' ' I
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IVN6100TNU
IVN6200CND
O-220
VN0401D
IVN6200CNE
T0-220
IRF533
IVN6200CNF
VN0801D
irf740 equivalent
MTM1N100
mtm5n35
tl 741
IVN6200CNH
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irf740 equivalent
Abstract: irf340 "cross reference" IRF450 equivalent 2SK259 irf150 2SK134 equivalent 2sk135 equivalent IRF240 IRF351 2SK132
Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160
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PWR-6501
IRF441
HPWR-6502
IRF340
HPWR-6503
HPWR-6504
VN4001A
2SK132
IRF122
irf740 equivalent
irf340 "cross reference"
IRF450 equivalent
2SK259
irf150
2SK134 equivalent
2sk135 equivalent
IRF240
IRF351
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