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    4096 BIT STATIC RAM Search Results

    4096 BIT STATIC RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4E101DPWR Texas Instruments 4-Channel ESD Protection With +/-15kV Contact ESD 4-X2SON -40 to 125 Visit Texas Instruments Buy
    TPD5E003DPFR Texas Instruments 5-Channel Space-Saving ESD Protection Device 6-X2SON -40 to 125 Visit Texas Instruments Buy

    4096 BIT STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA5104

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,


    Original     		PDF MA5104 DS3580-3 MA5104

    DS3580-3

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,


    Original     		PDF MA5104 DS3580-3 MA5104

    A10176

    Abstract: MA5104 DS3580-3
    Text: APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by


    Original     		PDF MA5104 DS3580-3 MA5104 A10176

    Untitled

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,


    Original     		PDF MA5104 DS3580-3 MA5104

    ac 1501-50

    Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
    Text: IM 7141M 4 0 9 6 Bit 4 0 9 6 x 1 NMOS Static RAM DßffifPIDIL DESCRIPTION FEATURES The IM7141 is a 4096-bit static Random Access Memory organized 4096 words x 1 bit. The storage cells and decode and control circuitry are com pletely static; no clocks or refresh


    OCR Scan     		PDF 7141M 4096x1) -200ns -300ns 495mW IM7141 4096-bit IM7141-2M IM7141-3M IM7141M ac 1501-50 DA10 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10

    2147 RAM

    Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147
    Text: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In­


    OCR Scan     		PDF 4096x1) 2147L) 4096-bit 2147 RAM D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147

    J18A

    Abstract: NMC2147H NMC2147HJ-1 NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L NMC214
    Text: NMC2147H yg\ National éüàSemiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­


    OCR Scan     		PDF NMC2147H 4096-word TL/D/5257-7 TL/D/5257-8 J18A NMC2147HJ-1 NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L NMC214

    NMC2147

    Abstract: NMC2147H-2
    Text: NMC2147H O T National ÆÂ Semiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­


    OCR Scan     		PDF NMC2147H NMC2147H 4096-word NMC2147 NMC2147H-2

    NMC2147HJ-1

    Abstract: J18A NMC2147H NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L
    Text: NMC2147H W A National dOA Semiconductor NM C2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. AN internal circuits are fully static and therefore re­


    OCR Scan     		PDF NMC2147H 4096-word NMC2147HJ-1 J18A NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L

    Untitled

    Abstract: No abstract text available
    Text: NMC2147H National SSA Semiconductor NMC2147H 4096 x 1-Bit Static RAM G eneral D e scription Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­


    OCR Scan     		PDF NMC2147H NMC2147H 4096-word TL/D/5257-7

    UPD2147

    Abstract: 2147 memory ic
    Text: NEC |xPD2147A 4 ,0 9 6 x 1 -BIT STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The [J.PD2147A is a 4096-bit static Random Access Memory organized as 4096 words by 1 bit, using a scaled MOS tech­ nology. It uses a uniquely innovative design approach which


    OCR Scan     		PDF uPD2147A 4096-bit PD2147A 200mV UPD2147 2147 memory ic

    zilog 6104

    Abstract: Z6104-3 Z6104-4 Z6104-1 8891 Z6104-5 Z6104-2 Z6104 Z6104CS A96C
    Text: Single Copy Z6104 Hand,e w¡t Product Specification 4096 x 1 Bit Static RAM JANUARY 1978 Preliminary Description Features ' • 4096 X 1 organization ■ Static data storage circuitry no refresh required ■ Single phase chip enable clock generator circuitry


    OCR Scan     		PDF Z6104 Z6104-1 Z6104-2 Z6104-3 Z6104-4 Z6104-5 Z6104-6 100pF Z6104CS zilog 6104 Z6104-3 Z6104-4 Z6104-1 8891 Z6104-5 Z6104-2 Z6104CS A96C

    ge c147

    Abstract: CY7C147-35KMB
    Text: _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM F eatures F unctional D escription • Automatic power-down when dese­ lected The CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is


    OCR Scan     		PDF CY7C147 CY7C147-45LMB CY7C147 38-00030-B ge c147 CY7C147-35KMB

    Untitled

    Abstract: No abstract text available
    Text: ss~ ü £ f~ _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM Features Functional Description • A utom atic power-down when dese­ lected T he CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is


    OCR Scan     		PDF CY7C147 CY7C147-45PC CY7C147-45DC CY7C147-45LC CY7C147-45DMB CY7C147-45KMB 38-00030-B

    NMC5257A

    Abstract: nmc2141
    Text: NMC2141, NMC5257A NMOSRAMs National Semiconductor Pr e v ie w NMC2141, NMC5257A 4096-Bit 4096 x 1 Static RAMs General Description Features These 4096-word by 1-bit sta tic random access memories are fabricated using N-channel silicon-gate technology. AH internal c ircu its are fully sta tic and therefore require


    OCR Scan     		PDF NMC2141, NMC5257A 4096-word NMC2141. NMC5257A 4096-Bit NMC2141

    zilog 6104

    Abstract: Z6104-1 Z6104-4
    Text: Single Copy Z6104 Handle Wit Product Specification 4096 x 1 Bit Static RAM JANUARY 1978 Zilog Features Description • 4096 X 1 organization ■ Static data storage circuitry no refresh required ■ Single phase chip enable clock generator circuitry ■ Separate data in and data output pins


    OCR Scan     		PDF Z6104 Z6104-1 Z6104-2 Z6104-3 Z6104-4 Z6104-5 Z6104-6 100pF Z6104CS zilog 6104

    im6654

    Abstract: 6654
    Text: 4096-Bit CMOS UV EPROM GENERAL DESCRIPTION FEATURES The Intersil IM6653 and IM6654 are fully decoded 4096 bit CMOS electrically programmable ROMs EPROMs fabricated with Intersil's advanced CMOS processing tech­ nology. In all static states these devices exhibit the micro­


    OCR Scan     		PDF 4096-Bit IM6653 IM6654 IM6653/IM6654 LD00310I 6654

    Untitled

    Abstract: No abstract text available
    Text: •> GOULD AM I Semiconductors Preliminary Data Sheet S6514 4096 BIT 1024x4 STATIC CMOS RAM Sep te m be r 1984 Features General Description □ □ □ □ □ □ □ □ The S 6 5 1 4 is a 4096 bit static C M O S R A M organized a s 1024 w o rd s by 4 bits per word. The device offers low


    OCR Scan     		PDF S6514 1024x4) 18-Pin

    CY2147-45PC

    Abstract: CY2147 CY2147-55PC CY2147-35PC 202S CY7C147 CY2147-35DC
    Text: W 4096 x 1 Static R/W RAM SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • H ighspeed — 35 ns T he CY2147 is a high-perform ance CM O S static R A M organized as 4096 by 1 bit. Easy


    OCR Scan     		PDF CY2147 CY2147â 45DMB CY2147-45PC CY2147-55PC CY2147-35PC 202S CY7C147 CY2147-35DC

    ram 4044

    Abstract: EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA
    Text: PRELIMINARY SPECIFICATION E m 4044 m S E M 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out I FEATURES • • • • • • • • • GENERAL DESCRIPTION SEMI’s 4044 RAMs are fu lly STATIC 4096 word X 1 bit N-MOS Random Access Memories— requiring no


    OCR Scan     		PDF 18-pin ram 4044 EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY SPECIFICATION E m 4044 m s e m i FEATURES • • • • • • • • • 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out 4096 words X 1 bit RAM High speed 450 ns ACCESS and CYCLE time Fully STATIC memory—no clock or refresh required Single +5V power supply


    OCR Scan     		PDF 18-pin

    ROJ-20

    Abstract: No abstract text available
    Text: PRELIMINARY HY61C68 HYUNDAI SEMICONDUCTOR 4096x4-Bit CMOS Static RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF 4096x4-Bit HY61C68 HY61C68 4096-word HY61C68L ROJ-20

    MCM62963A

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62963A Product Preview 4K x 10 Bit Synchronous Static RAM with Output Registers The MCM62963A is a 40,960 bit synchronous static random access memory organized as 4096 words of 10 bits, fabricated using Motorola's second-generation high-performance


    OCR Scan     		PDF MCM62963A MCM62963A 2963A MCM62963AFN30

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62975A Product Preview 4K x 12 Bit Synchronous Static RAM with Transparent Outputs and Output Enable The MCM62975A is a 49,162 bit synchronous static random access memory organized as 4096 words of 12 bits, fabricated using Motorola's second-generation high-performance


    OCR Scan     		PDF MCM62975A MCM62975A -------------8297b 62975FN MCM62975FN30