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    405NM 10MW Search Results

    405NM 10MW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DLP5534PROJQ1EVM Texas Instruments DLP5534-Q1 405nm projector evaluation module Visit Texas Instruments Buy
    DLP5534Q1EVM Texas Instruments Electronics-only EVM featuring DLP5534-Q1 0.55 405nm DMD Visit Texas Instruments Buy
    TIBPAL16R8-10MWB Texas Instruments High-Performance Impact-X PAL Circuits 20-CFP -55 to 125 Visit Texas Instruments Buy
    TPS62810MWRWYR Texas Instruments 2.75-V to 6-V, 4-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 Visit Texas Instruments
    DLP5534AFYKQ1 Texas Instruments DLP® automotive 0.55-inch 405nm digital micromirror device (DMD) 149-CPGA -40 to 105 Visit Texas Instruments

    405NM 10MW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CS4050205M 406nm Compact Laser Diode Key features Visible light λ= 405nm Output powers =20mW Package type=5.6mmΦ High reliability Applications Blu-ray Disc/HD DVD drive Other new application Laser Diode Solutions CS4051205X is a MOCVD grown 405nm band InGaAs laser diode.It's an


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    CS4050205M 406nm 405nm CS4051205X 405nm divers-vis/lcs/cs4050205m PDF

    CS4050205M

    Abstract: 405nm 5mW laser diode 405nm 20mW TS 5225 405nm laser diode 405nm Laser 5 mw
    Text: CS4050205M 406nm Compact Laser Diode Key features Visible light λ= 405nm Output powers =20mW Package type=5.6mmΦ High reliability Applications Blu-ray Disc/HD DVD drive Other new application Laser Diode Solutions CS4050205M is a MOCVD grown 405nm band GaN laser diode. It's an


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    CS4050205M 406nm 405nm CS4050205M divers-vis/lcs/cs4050205m 405nm 5mW laser diode 405nm 20mW TS 5225 405nm laser diode 405nm Laser 5 mw PDF

    DL-4146-101S

    Abstract: 405nm 10mw DL-4146-101 405nm diode
    Text: BLUE - VIOLET LASER DIODE DL-4146-101S Ver.3 May. 2008 Features Package ・Wavelength : 405nm Typ. ・Output power : 10mW ・Threshold current : Ith=26mA(Typ.) ・Package : φ5.6mm with PD (Unit : mm) Tolerance:±0.2 +0 φ5.6 -0.025 φ4.4 φ3.55±0.1 φ1.6


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    DL-4146-101S 405nm DL-4146-101S 405nm 10mw DL-4146-101 405nm diode PDF

    DL-4146-101

    Abstract: DL-4146-101S 405nm laser diode 405nm 2 Wavelength Laser Diode sanyo
    Text: BLUE - VIOLET LASER DIODE DL-4146-101S Ver.4 April. 2009 Features Package ・Wavelength : 405nm Typ. ・Output power : 10mW ・Threshold current : Ith=26mA(Typ.) ・Package : φ5.6mm with PD (Unit : mm) Tolerance:±0.2 +0 φ5.6 -0.025 φ4.4 φ3.55±0.1 φ1.6


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    DL-4146-101S 405nm DL-4146-101 DL-4146-101S laser diode 405nm 2 Wavelength Laser Diode sanyo PDF

    laser diode 405nm

    Abstract: 445nm laser diode 445nm 405nm 10mw furukawa 405nm 4835 7313 biomedical d-sub15
    Text: Violet Laser Module [405nm/445nm] HPU50213 Series FITEL HPU50213 is a fiber-coupled diode laser source with excellent performance suitable for biomedical application. This module offers high reliability and stability characteristics based on our packaging technologies which originated


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    405nm/445nm] HPU50213 RS-232C 1-866-GO-FITEL HPU502-V REV01 P08CA710-058 laser diode 405nm 445nm laser diode 445nm 405nm 10mw furukawa 405nm 4835 7313 biomedical d-sub15 PDF

    650nm laser diode 200mw

    Abstract: DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo
    Text: SANYO Laser Diodes support advanced information society. SANYO has a wide range of laser diodes from 405nm to 830nm in the line-up. SANYO laser diodes are characterized by high power models for DVD±R/RW/-RAM and CD-R. There are also 635nm models for industrial applications such as laser display, bar-code scanners,


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    405nm 830nm 635nm 808nm 650nm laser diode 200mw DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo PDF

    DL-4146-101S

    Abstract: DL-4146-101
    Text: 青紫半導体レーザ DL-4146-101S Ver.4 April. 2009 特 長 外形図 ・発振波長 : 405nm Typ. ・光出力 : Po=10mW CW ・しきい値電流 : Ith=26mA(Typ.) ・パッケージ : φ5.6mm (単位: mm) 一般公差±0.2 +0 φ5.6 -0.025 φ4.4 φ3.55±0.1


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    DL-4146-101S 405nm 1-1-1010F 03-3837-6272FAX03-3837-6390 DL-4146-101S DL-4146-101 PDF

    DL-3147-060

    Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
    Text: LASER DIODE '05-03 Tottori SANYO Electric Co., Ltd Photonics Business Unit Laser sales Section 1-1-10 Ueno, Taito-ku, Tokyo, 110-8534, JAPAN Tel : +81-3-3837-6272 Fax : +81-3-3837-6390 Photonics Business Unit 5-318, Tachikawa-cho, Tottori-city, Tottori, 680-8634 JAPAN


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    405nm 980nm DL-3147-060 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v PDF

    SIC01M-18

    Abstract: No abstract text available
    Text: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    SIC01M-18 SIC01M-18 PDF

    SIC01S-B18

    Abstract: No abstract text available
    Text: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    SIC01S-B18 SIC01S-B18 PDF

    SIC01S-C18

    Abstract: No abstract text available
    Text: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    SIC01S-C18 SIC01S-C18 PDF

    SIC01S-18

    Abstract: No abstract text available
    Text: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    SIC01S-18 SIC01S-18 PDF

    SIC01S-18ISO90

    Abstract: SiC Photodiodes
    Text: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC


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    SIC01S-18ISO90 SIC01S-18ISO90 SiC Photodiodes PDF

    SIC01M-5LENS

    Abstract: No abstract text available
    Text: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The


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    SIC01M-5LENS SIC01M-5LENS PDF

    LV4906

    Abstract: LV4921 LV47006 LC70301 LC74157 LV4906V LC786927 lv47006p LC71F7001 lv49152
    Text: 環境配慮型 半導体製品 2009-7 「Think GAiA」ビジョンのもと 快適空間をつくり出す機器開発を支え、 環境保全に貢献する半導体製品を提案してまいります。 地 球とい のちが 喜 ぶモノ創り 地球環境配慮


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    LC749402BG LC74M1701 ARM926EJ-STM 256Mbit 16Mbit 14MHz, 27MHz P125A LV4906 LV4921 LV47006 LC70301 LC74157 LV4906V LC786927 lv47006p LC71F7001 lv49152 PDF

    DL-4146-101

    Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
    Text: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division Laser Sales Section 1-1-10 Ueno,Taito-ku,Tokyo,110-8534 JAPAN Tel:+81-3-3837-6272 Fax:+81-3-3837-6390 Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division


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    UPS APC 800 CIRCUIT

    Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
    Text: Laser Diode Products for the OEM  INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications


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    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


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    RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI PDF