Untitled
Abstract: No abstract text available
Text: TGA4043 Q Band Power Amplifier Key Features • • • • • • Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm 0.121 x 0.124 x 0.004 in Primary Applications
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TGA4043
500mA
TGA4043
0007-inch
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TGA4043
Abstract: No abstract text available
Text: TGA4043 Q Band Power Amplifier Key Features • • • • • • Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm 0.121 x 0.124 x 0.004 in Primary Applications
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TGA4043
500mA
TGA4043
0007-inch
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f244 motorola
Abstract: F84041 Cyrix 486 dx2 Cyrix 486 CS4021 4MB flash bios chip 8 pin 146818 rtc F84045 CS4041 weitek
Text: CS4041 CHIPSet 84041 and 84045 CHIPSet Data Book Revision 1.0 February 1995 P R E L I M I N A R Y Copyright Notice Copyright 1994 and 1995 Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce, transmit, transcribe,
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CS4041
CS4041
f244 motorola
F84041
Cyrix 486 dx2
Cyrix 486
CS4021
4MB flash bios chip 8 pin
146818 rtc
F84045
weitek
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PDF
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TGA4043
Abstract: No abstract text available
Text: Advance Product Information April 25, 2005 Q-band Power Amplifier TGA4043 Key Features • • • • • • Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm
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TGA4043
TGA4043
0007-inch
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TGA4043-EPU
Abstract: No abstract text available
Text: Advance Product Information September 15, 2003 Q-band Power Amplifier TGA4043-EPU Key Features • • • • • • Frequency Range: 40-45 GHz 29 dBm Nominal Pout @ P1dB 10 dB Nominal Gain 0.25 um pHEMT Technology Bias 7V @ 500 mA Chip Dimensions 3.08 mm x 3.14 x 0.10 mm
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TGA4043-EPU
TGA4043-EPU
0007-inch
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MwT-371
Abstract: 371 fet
Text: MwT-3 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 11 dB SMALL SIGNAL GAIN AT 12 GHz • +21.0 dBm OUTPUT POWER AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 300 MICRON GATE WIDTH
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K25V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 25V 4045 1 4 .0 —14.5GHz BAND •3W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 2 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 .0 ~ 14.5
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FK25V4045
K25V4045
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4045 FET
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND IW INTERNALLY MATCHED GaAs FET DESCRIPTION O U T L IN E D R A W IN G U n it: m illim e te rs linches The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 ~ 14.5
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MGFK30V4045
FK30V4045
4045 FET
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MGFK30M4045
Abstract: E 212 fet DC bias of gaas FET
Text: TL MITSUBISHI {DISCRETE SC3- D E ltS M T flH T 0D1G142 7 MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK30M 4045 FOR MICROWAVE PO W ER A M P LIFIE R S IN TERN A LLY MATCHED 6249829 M ITSU BISH I D ISC R ETE SC 9 1 D 10142 D T-39-ôS DESCRIPTION The MGFK30M4045 is an internally impedance-matched
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0D1G142
GFK30M
MGFK30M4045
E 212 fet
DC bias of gaas FET
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K37V4045
Abstract: k37v
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 37V 4045 1 4 . 0 - 14.5G H z BAND 5 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 14 .0 ~ 14.5 G Hz-band amplifiers. The herm etically sealed metal-ceramic
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Untitled
Abstract: No abstract text available
Text: b2 fl2 1 DDlöDbB ÔÔ4 • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 39V 4045 1 4 .0 —1 4 .5GHz BAND 8 W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 9 V 4 0 4 5 is an internally impedance matched GaAs power FE T especially designed for use in 1 4 .0 — 14.5
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 33V 4045 1 4 . 0 - 14.5GH z BAND 2W IN TERN ALLY MATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 14.0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic
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FK33V4045
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14.5ghz
Abstract: GaAs FET chip MGFK25V4045
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 25V 4045 1 4 .0 ~ 1 4 .5 G H z BAND 0 .3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 2 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power F E T especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed m etal-ceramic
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MGFK25V4045
MGFK25V4045
36dBm
150mA
30GHz
31GHz
14.5ghz
GaAs FET chip
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K30V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND 1W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 0 V 4 0 4 5 is an in te rn a lly im pedance-m atched G aA s p o w e r F E T especially designed fo r use in 1 4 .0 ~ 1 4 .5
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30V4045
K30V4045
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 36V 4045 pBtU v o Tv.» ç lw W " gV ,C. 5 mP 1 4 .0 — 14.5G H z BAND 4 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G F K 3 6 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 1 4 . 0 - 1 4 . 5
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39v4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 39V 4045 14.0 ~ 14.5GHz B A N D 8 W IN T E R N A LLY M A TCH D G aA s FET Son»a P DESCRIPTION OUTLINE DRAW ING The M G F K 3 9 V 4 0 4 5 is an internally impedance matched G aA s power F E T especially designed for use in 1 4 . 0 - 14.5
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K30V
Abstract: 145g K30V4045 P1D8
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 30V 4045 1 4 .0 — 14.5G H z BAND IW INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F K 3 0 V 4 0 4 5 is an in te rn a lly im pedance-m atched G aA s p o w e r F E T especially designed fo r use in 1 4 .0 ~ 1 4 .5
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FK30V4045
K30V
145g
K30V4045
P1D8
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MGFK35V4045
Abstract: FS21
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 14.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 .0 ~ 14.5 G H z-band am plifiers. The herm etically sealed m etal-ceram ic
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MGFK35V4045
MGFK35V4045
S22vs.
1200mA)
FS21
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an intern ally impedance matched GaAs pow er F E T especially designed fo r use in 1 4 . 0 ~ 14.5 G H z-band amplifiers. T he herm etically sealed m etal-ceram ic
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GFK35V4045
17add
1200mA)
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intel 8042 microcontroller, ibm pc
Abstract: Cyrix 486 dx2 S042E SCHEMATIC ATI graphics card F84041 Cyrix 486 F84045 A2023 cs4021 chips technologies ide
Text: C r ï i r i b _ Subject to change without notice CS4041 CHIPSet - Single bank or dual bank word interleaved cache - Multiple timing modes supported for cost performance tradeoff • Power Management - SMI support - Many power management features can be utilized
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CS4041
CS4041
intel 8042 microcontroller, ibm pc
Cyrix 486 dx2
S042E
SCHEMATIC ATI graphics card
F84041
Cyrix 486
F84045
A2023
cs4021
chips technologies ide
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MGFK41V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK41V4045 1 4 .0 — 14.5G H z BAND 1 2 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK4 1V 40 45 is an internally impedance matched GaA sp ow erFET especially designed for use in 1 4 .0 - 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK41V4045
MGFK41V4045
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25V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 25V4045 1 4 .0 — 14.5G H z BAND 0 .3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 2 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power F ET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed m etal-ceramic
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25V4045
13UfT1«
25V4045
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K35V4045
Abstract: FK35V4045
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK35V4045 14.0— 14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14 .0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic
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FK35V4045
35V4045
200nnA)
K35V4045
FK35V4045
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N3810
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK3 7V4045 1 4 . 0 - 14.5GHz BAND SW INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The M G FK 3 7 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed for use in 14.0 ~ 14.5 GHz-band amplifiers. The hermetically sealed metal-ceramic
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7V4045
N3810
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