Untitled
Abstract: No abstract text available
Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain −
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NJT4031N,
NJV4031NT1G,
NJV4031NT3G
NJT4031N/D
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4031n
Abstract: NJT4031N NJT4031NT1G NJT4031NT3G BD 645/BD 650/PADI SOT 23
Text: NJT4031N Preferred Device Bipolar Power Transistors NPN Silicon Features •ăCollector -Emitter Sustaining Voltage - http://onsemi.com VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc •ăHigh DC Current Gain = 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc
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NJT4031N
OT-223
OT-223
4031NG
4031N
NJT4031N/D
4031n
NJT4031N
NJT4031NT1G
NJT4031NT3G
BD 645/BD 650/PADI SOT 23
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Untitled
Abstract: No abstract text available
Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Epoxy Meets UL 94, V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring • NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS Unique Site and Control Change Requirements; AEC−Q101
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NJT4031N,
NJV4031NT1G,
NJV4031NT3G
AEC-Q101
NJT4031N/D
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4031N
Abstract: No abstract text available
Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Epoxy Meets UL 94, V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V NJV Prefix for Automotive and Other Applications Requiring
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NJT4031N,
NJV4031NT1G,
NJV4031NT3G
AEC-Q101
NJT4031N/D
4031N
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4031N
Abstract: NJV4031NT1G NJV4031NT3G
Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc
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NJT4031N,
NJV4031NT1G,
NJV4031NT3G
OT-223
AEC-Q101
NJT4031N/D
4031N
NJV4031NT1G
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4031N
Abstract: NJT4031N NJT4031NT1G NJT4031NT3G
Text: NJT4031N Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage −
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NJT4031N
OT-223
OT-223
NJT4031N/D
4031N
NJT4031N
NJT4031NT1G
NJT4031NT3G
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