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    4030p

    Abstract: NJT4030p NJT4030PT1G NJT4030PT3G
    Text: NJT4030P Bipolar Power Transistors PNP Silicon Features • Collector -Emitter Sustaining Voltage -      VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -= 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage -VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc


    Original     		PDF NJT4030P OT-223 OT-223 4030PG NJT4030P/D 4030p NJT4030p NJT4030PT1G NJT4030PT3G

    4030p

    Abstract: No abstract text available
    Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Epoxy Meets UL 94, V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V NJV Prefix for Automotive and Other Applications Requiring


    Original     		PDF NJT4030P, NJV4030PT1G, NJV4030PT3G AEC-Q101 NJT4030P/D 4030p

    Untitled

    Abstract: No abstract text available
    Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Epoxy Meets UL 94, V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF NJT4030P, NJV4030PT1G, NJV4030PT3G AEC-Q101 NJT4030P/D

    4030p

    Abstract: NJT4030P NJT4030PT1G NJT4030PT3G
    Text: NJT4030P Preferred Device Bipolar Power Transistors PNP Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc hFE


    Original     		PDF NJT4030P OT-223 OT-223 4030PG 4030Plaws NJT4030P/D 4030p NJT4030P NJT4030PT1G NJT4030PT3G

    Untitled

    Abstract: No abstract text available
    Text: NJT4030P, NJV4030P Bipolar Power Transistors PNP Silicon Features • Epoxy Meets UL 94, V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original     		PDF NJT4030P, NJV4030P NJT4030P/D

    4030p

    Abstract: No abstract text available
    Text: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc POWER BJT IC = 3.0 AMPERES BVCEO = 40 VOLTS • High DC Current Gain −


    Original     		PDF NJT4030P OT-223 4030P 4030PG NJT4030P/D

    4030p

    Abstract: No abstract text available
    Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4030P, NJV4030PT1G, NJV4030PT3G NJT4030P/D 4030p

    4030p

    Abstract: NJT4030P NJT4030PT1G NJT4030PT3G
    Text: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • High DC Current Gain −


    Original     		PDF NJT4030P OT-223 OT-223 4030Plaws NJT4030P/D 4030p NJT4030P NJT4030PT1G NJT4030PT3G

    4030p

    Abstract: NJV4030PT1G
    Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4030P, NJV4030PT1G, NJV4030PT3G OT-223 AEC-Q101 NJT4030P/D 4030p NJV4030PT1G