BC401
Abstract: No abstract text available
Text: Signal, Control and Power cables, Shielded with PVC jacket BC401 Item no. 4010305 4010405 4010505 4010705 4011205 4011805 4012505 4010507 4010707 4011207 4010310 4010410 4010510 4010710 4011210 4011810 4012510 4010315 4010415 4010515 4010715 4011215 4011815
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BC401
BC401
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2SA572
Abstract: 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564
Text: Electrical characteristics Ta=25ºC Tj DC Current Gain hFE fab/ft* Cob VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 70 -1 -10 200* 10 40125 -1 -120 >50 8 240 30175 -2 -150 80* 22 300 30175 -2 -150 80* 22 300 40125 -2 -50 100* 20 240 85 300* 1 85 250* 1 85 200* 1
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2SA501
2SA502
2SA503
2SA504
2SA505
2SA506
2SA507
2SA508
2SA509
2SC828
2SA572
2SC1006
2SC696
2SC708
2SC984
2SC708A
2SC734 equivalent
2SC680
2SA518
datasheet 2sa564
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MG100Q2YS1
Abstract: No abstract text available
Text: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:
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MG100Q2YS1
MG100Q2YS1
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MG50G2CL3
Abstract: Mg50G2cl mg50g2
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)
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MG50G2CL3
MG50G2CL3
Mg50G2cl
mg50g2
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MG15G1AL3
Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)
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MG15G1AL3
MG15G1AL3
MG15G1AL3 equivalent
mg15g1
mg15g
MG15G1AL
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MG50H2YS1
Abstract: No abstract text available
Text: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one
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MG50H2YS1
MG50H2YS1
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mg75n2ys
Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
Text: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.
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MG75N2YS1
mg75n2ys
LTA 703 S
MG75N2YS1
MG75N2
MG75N2Y
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sf3d42c
Abstract: SF3G42C
Text: THYRISTOR SILICON PLANAR TYPE SF3 D,G 42C LOW POWER CONTROL APPLICATIONS. Unit in mm 1 0.0 1 0.5 Repetitive Peak Off-State Voltage: Vr)RM=200~400V DRM“ Repetitive Peak Reverse Voltage ^RRM =10V r (S3.2±0.1 •ix" • Plastic Mold Package • Peak On-State Voltage
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SF3D42C
SF3G42C
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MG30G2YM1
Abstract: LD30A
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance
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MG30G2YM1
15AIN-SOURCE
MG30G2YM1
LD30A
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MG150H2CL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)
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MG150H2CL1
MG150H2CL1
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ic 109b
Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Text: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling
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MG100M2YK1
-109B
ic 109b
MG100M2YK1
Di 762 transistor
transistor B 764
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MG25N6EK1
Abstract: ij98
Text: MG25N6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. Unit in mm 13.5 13.5 . 6 Power Transistors and 6 Free Wheeling Tolerance is ± Q 5 m m unless Diodes are Built Into 1 Package.
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MG25N6EK1
MG25N6EK1
ij98
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MG400H1UL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic =400A) . Low Saturation Voltage
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MG400H1UL1
MG400H1UL1
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MG15D6EM1
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D6EM1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance
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MG15D6EM1
MG15D6EM1
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M16JZ47
Abstract: M16GZ47 m16gz SM16J M16JZ47A
Text: I TRIAC SM16 G,J Z47 SM16(G,J)Z47A SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm . Repetitive Peak Off-State Voltage VuRif=400, 600V . R.M.S On-State Current It (RMS)=16A 0 3.2 ± 0 .2 1 0 .3 MAX . High Commutating (dv/dt) VlSOL=1500V AC . Isolation Voltage
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SM16GZ47
SM16GZ47A
SM16JZ47
SM16JZ47A
70X70X
M16JZ47
M16GZ47
m16gz
SM16J
M16JZ47A
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MG200H2CK1
Abstract: tf3s cm7200
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hj’E=200 Min. (Ic=200A)
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MG200H2CK1
MG200H2CK1
tf3s
cm7200
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MG30G6EL1
Abstract: transistor 30A 600v tf s 544 a
Text: QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.
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MG30G6EL1
00A/As
MG30G6EL1
transistor 30A 600v
tf s 544 a
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S6370
Abstract: No abstract text available
Text: S6370 THYRISTOR SILICON DIFFUSED JUNCTION Unit in mm LOW POWER SWITCHING APPLICATIONS STROBO TRIGGER 0 5 . 1 MAX. • Repetitive Peak Off-State Voltage VDRM=400V • Repetitive Peak Reverse Voltage Vr r m =4° o v • Fast Turn On Time tgt= l .5 jjs I 1
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S6370
S6370
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MG25N2YS1
Abstract: WE VQE 23 F
Text: GTR MODULL SILICON N CHANNEL IGBT MG25N2YS1 HI GH POWER S WI T C H I N G AP PL IC ATIONS. H OT O R CONT R OL A P P L I CA TI ON S . FEATURES: . High I n p u t Im p eda nc e . High Speed . . . . : t f = 1 . Oys Ma x. t r r = 0. 5jLis(Max.) Low S a t u r a t i o n V o l t a g e : Vq e ( s a t ) = 5 • o v (‘M ax•)
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MG25N2YS1
MG25N2YS1
WE VQE 23 F
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MG10G6EL2
Abstract: w327 mg10g
Text: MG10G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.
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MG10G6EL2
03CJ10
MG10G6EL2
w327
mg10g
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RS5101
Abstract: TLP352
Text: GaAs IRED & PHOTO-TRIAC TLP3520A Unit in mm TRIAC DRIVER PROGRAMMABLE CONTROLLERS AC-OUTPIJT MODULE SOLID STATE RELAY The TOSHIBA TLP3520A consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 16 lead plastic DIP package.
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TLP3520A
TLP3520A
2500Vrms
TLP3520minute
RS5101
TLP352
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpg=80 Min. (Ic=150A)
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MG150M2YK2
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SF400U27
Abstract: SF400Q27 SF400L27 sf400u
Text: THYRISTOR SF400 L,N,Q,R,U 27 SILICON DIFFUSED TYPE HIGH POWER CONTROL APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage . Average On-State Current . Turn-Off Time . Critical Rate of Rise of On-State 8-j2f4±ag
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SF400
150/is
00A//js
00V//is
SF400L27
SF400N27
SF400Q27
SF400R27
SF400U27
sf400u
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MG10Q6EK1
Abstract: darlington power transistor 10a
Text: MG10Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O W E R S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A P PLICATIONS. . The Collector Is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Pacakge. . With Built-in Free Wheeling Diode.
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MG10Q6EK1
MG10Q6EK1
darlington power transistor 10a
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