datasheet of rectifier diode
Abstract: "RECTIFIER DIODE" Rectification RECTIFIER DIODE diode rectifier Diodes, Rectifiers rectifier diode datasheet 1SR153 1sr153-400
Text: Diodes High–speed rectifier diode 1SR153–400 FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Cylindrical mold. (MSD) 2) High reliability. 3)ăAssures 400V while maintaining high speed. Rectifier diodes FConstruction
|
Original
|
1SR153
datasheet of rectifier diode
"RECTIFIER DIODE"
Rectification
RECTIFIER DIODE
diode rectifier
Diodes, Rectifiers
rectifier diode datasheet
1sr153-400
|
PDF
|
1SR124
Abstract: 1SR124-400A
Text: Diodes High–speed rectifier diode 1SR124–400A FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Glass sealed envelope. (JEDEC: DO–41) 2) High speed. (trr=0.4µs Max.) 3) Assures 400V while maintaining high speed. Rectifier diodes
|
Original
|
1SR124
1SR124-400A
|
PDF
|
1SR124-400A
Abstract: No abstract text available
Text: 1SR124-400A Diodes Rectifier diode 1SR124-400A zExternal dimensions Units : mm zApplications High speed rectification CATHODE BAND (GREEN) zFeatures 1) Glass sealed envelope. (GSR) 2) High speed. (trr=0.4µs Max.) 3) VRM=400V guaranteed while maintaining high speed.
|
Original
|
1SR124-400A
DO-41
1SR124-400A
|
PDF
|
1SR156
Abstract: No abstract text available
Text: Diodes High–speed rectifier diode 1SR156–400 FApplications High speed rectification FExternal dimensions Units: mm FFeatures 1) Small surface mounting type. (PMDS) 2) High reliability. 3)ăPeak reverse voltage is 400V even at high speed. Rectifier diodes
|
Original
|
1SR156
|
PDF
|
1SR153-400
Abstract: No abstract text available
Text: 1SR153-400 Diodes Rectifier diode 1SR153-400 !External dimensions Units : mm !Applications High speed rectification CATHODE BAND (SILVER) φ0.6±0.1 !Features 1) Cylindrical mold. (MSR) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability.
|
Original
|
1SR153-400
DO-41
1SR153-400
|
PDF
|
1SR153-400
Abstract: DIODE DO-41 mini
Text: 1SR153-400 Diodes Rectifier diode 1SR153-400 !External dimensions Units : mm !Applications High speed rectification CATHODE BAND (SILVER) φ0.6±0.1 !Features 1) Cylindrical mold. (MSR) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability.
|
Original
|
1SR153-400
DO-41
1SR153-400
DIODE DO-41 mini
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name
|
Original
|
ERC18
et-02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name
|
Original
|
ERC18
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ERC18 1.2A ( 200, 400V / 1.2A ) Outline drawings, mm FAST RECOVERY DIODE ø4.0 ø1.0 7.5 28 MIN. 28 MIN. Features High speed switching Marking High reliability Color code : White Voltage class Lot No. Cathode mark 11 High speed switching C18 0 2 Type name
|
Original
|
ERC18
|
PDF
|
1SS311
Abstract: 13G1B
Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance
|
Original
|
1SS311
SC-59
1SS311
13G1B
|
PDF
|
1SS399
Abstract: No abstract text available
Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance
|
Original
|
1SS399
SC-61
10mstransportation
1SS399
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Unit in mm Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance
|
Original
|
1SS311
SC-59
961001EAA2'
|
PDF
|
SC61 equivalent
Abstract: TOSHIBA DIODE 1SS399 sc61 SC-61 EIAJ
Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5 s (typ.) Small total capacitance
|
Original
|
1SS399
SC-61
100mA
SC61 equivalent
TOSHIBA DIODE
1SS399
sc61
SC-61 EIAJ
|
PDF
|
1SS398
Abstract: No abstract text available
Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance
|
Original
|
1SS398
SC-59
1SS398
|
PDF
|
|
|
1SS397
Abstract: No abstract text available
Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance
|
Original
|
1SS397
SC-70
1SS397
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance
|
Original
|
1SS399
SC-61
10msditions
961001EAA2'
|
PDF
|
1SS398
Abstract: No abstract text available
Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance
|
Original
|
1SS398
SC-59
961001EAA2'
1SS398
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance
|
Original
|
1SS397
SC-70
961001EAA2'
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BAV5004WS HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: 50ns Maximum 400V High Reverse Breakdown Voltage Rating Low Capacitance: 2.5pF Maximum Surface Mount Package Ideally Suited for Automated Insertion
|
Original
|
BAV5004WS
AEC-Q101
OD323
J-STD-020
DS30733
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSK122-Silicon Epitaxial Planar Diode for High Voltage Switching Outline Features • High reverse voltage. Vr = 400V • LLD package is suitable for high density surface mounting and high speed assembly. Cathode band I Cathode band
|
OCR Scan
|
HSK122------------------------Silicon
HSK122
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSK122 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-172B Z Rev. 2 Aug. 1995 Features • High reverse voltage. (VR= 400V) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information
|
OCR Scan
|
HSK122
ADE-208-172B
100mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1SS398 TO SHIBA 1SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp= 1.0V Typ. : VR = 400V (Min.)
|
OCR Scan
|
1SS398
SC-59
961001EAA2'
|
PDF
|
1SS399
Abstract: No abstract text available
Text: TOSHIBA 1SS399 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vp = 1.0V Typ. VR = 400V (Min.)
|
OCR Scan
|
1SS399
SC-61
300pi
961001EAA2'
1SS399
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1SS397 TOSHIBA 1SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr= 1.0V Typ. : V r = 400V (Min.)
|
OCR Scan
|
1SS397
SC-70
961001EAA2'
|
PDF
|
