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    400MHZ 10 W TRANSISTOR Search Results

    400MHZ 10 W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    400MHZ 10 W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF321

    Abstract: No abstract text available
    Text: MRF321 The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • • • • Guaranteed performance at 400 MHz, 28 Vdc Output power = 10 W


    Original     		PDF MRF321 400MHz, MRF321

    mce544

    Abstract: bfr96 equivalent MC3042 Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630
    Text: MC3042 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC3042 is a high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! 1Watt Output Power @ 400MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC3042 400MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA mce544 bfr96 equivalent Bipolar Transistor y 200Mhz MRF237 / SD1127 MC1343 MCE545 transistor 5ghz pnp MC1309 MRF630

    2N3632

    Abstract: 2N3375 2N3373
    Text: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND 130 TO 400MHz FREQUENCY 28V VOLTAGE 2.5TO13.5W POWER OUT HIGH POWER GAIN


    Original     		PDF 2N3375 2N3632/2N3733 400MHz 5TO13 2N3373 2N3632 2N3733 -200mA Vca-30V 250mA 2N3632 2N3375 2N3373

    Untitled

    Abstract: No abstract text available
    Text: , L nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1462 RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C CLASS C TRANSISTOR FREQUENCY 400MHz VOLTAGE 28V POWER OUT 70W POLWER GAIN 9.00B


    Original     		PDF SD1462 400MHz S006LF VUU-30V

    2N3866A

    Abstract: Transistor 2N3866 2N3866 RF 2N3866 15-September
    Text: 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.


    Original     		PDF 2N3866 2N3866A 2N3866 2N3866A Ju20mA 2N3866) 2N3866A) 360mA 200MHz Transistor 2N3866 RF 2N3866 15-September

    Untitled

    Abstract: No abstract text available
    Text: MS1642P RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE Features • • • • • • 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY COMMON EMITTER CONFIGURATION The MS1642 is a gold metallized silicon NPN transistor


    Original     		PDF MS1642P MS1642 400MHz

    uhf vhf amplifier

    Abstract: MS1642P
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1642P RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE Features • • • • • • 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY


    Original     		PDF MS1642P MS1642 400MHz uhf vhf amplifier MS1642P

    M113

    Abstract: SD2904
    Text: SD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 10 dB MIN. AT 400 MHz CLASS A OR AB .380 4LFL M113 ORDER CODE SD2904 DESCRIPTION The SD2904 is a gold metallized N-channel MOS field effect RF power transistor. The SD2904 is


    Original     		PDF SD2904 SD2904 M113

    MS1642

    Abstract: MS1642P rf power amplifier 400MHz
    Text: MS1642P RF & MICROWAVE TRANSISTORS VHF, UHF GENERAL PURPOSE Features • • • • • • 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1642 is a gold metallized silicon NPN transistor


    Original     		PDF MS1642P MS1642 400MHz MS1642P rf power amplifier 400MHz

    microstrip line

    Abstract: 400 watt hf mosfet transistor z4 n vk200 VK200-19/4B MS4000
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4000 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION:


    Original     		PDF MS4000 MS4000 VK200-19/4B MSC0877 microstrip line 400 watt hf mosfet transistor z4 n vk200 VK200-19/4B

    Untitled

    Abstract: No abstract text available
    Text: TSD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    Original     		PDF TSD2900 TSD2900

    SD2900

    Abstract: M113
    Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 5 WATTS 28 VOLTS 13.5 dB MIN AT 400 MHz CLASS B OR AB .380 4LFL M113 ORDER CODE SD2900 DESCRIPTION The SD2900 is a gold metallized N-channel MOS field effect RF power transistor. The SD2900 is


    Original     		PDF SD2900 SD2900 M113

    MRF323

    Abstract: No abstract text available
    Text: MRF323 The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • • • • Product Image


    Original     		PDF MRF323 400MHz, MRF323

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IDM500CW200 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW


    Original     		PDF IDM500CW200 IDM500CW200 2x100mA IDM500CW200-REV-NC-DS-REV-C

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IDM30512CW100 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET  High Power Gain  Superior thermal stability The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512


    Original     		PDF IDM30512CW100 IDM30512CW100 30-512MHz 400MHz. 2x100mA IDM30512CW100-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IDM30512CW50 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 MHz under CW conditions. Over the


    Original     		PDF IDM30512CW50 IDM30512CW50 30-512MHz 400MHz. 2x100mA IDM30512CW50-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E


    Original     		PDF RD02LUS2 470MHz RD02LUS2 15dBTyp 470MHz 18dBTyp

    OF TRANSISTOR 2N5485

    Abstract: 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5484 2N5486
    Text: Datasheet 2N5484 THRU 2N5486 Central Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N CHANNEL JUNCTION F IE L D EFFECT TRANSISTOR JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N5484 2N5486 100MHz 400MHz 400MHz OF TRANSISTOR 2N5485 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5486

    J5486

    Abstract: fmmj5484
    Text: FMMJ5484 to FMMJ5486 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FM M J5484 - H84 FM M J5485 - H85 FM M J5486 - H86 APPLICATION AREAS: * VHF/UHF AMPLIFIERS ABSOLUTE MAXIMUM RATINGS at Tamb= 2 5°C -2 5 V Gate Drain or G ate-S ource V oltag e Notes


    OCR Scan     		PDF J5484 J5485 J5486 FMMJ5484 FMMJ5486 400MHz 15Vdc,

    2N3632

    Abstract: 2N3375 2N3733 transistor 2N3 SD1050 SD1075 SD1070 n3733
    Text: *Lp L°2!£s ; MaEcmsem • f r if U lP rol gA 7 ^ f lll re s s P o w e re d b y T ec h no log y 140 Commerce Drive O Kl Q Q 7 C Montgomeryvme, PA 1893 ä H O O /O Tel: 215 631 9840 2 N 3 6 3 2 /2 N 3 7 3 3 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND


    OCR Scan     		PDF 2N3375 N3632/2 N3733 130T0 400MHZ SD1050 2N3632 SD1075 2N3733 2N3632 2N3375 2N3733 transistor 2N3 SD1070 n3733

    Untitled

    Abstract: No abstract text available
    Text: m m m RF Products a Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz


    OCR Scan     		PDF MS4000 VK200-19/4B MSC0877

    b711

    Abstract: SD1468 M111 400mhz 10 w transistor RTN 980
    Text: H M /Irl/Cf r» f ! / / P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive •wivsi i i u w i i i ceryville, i y v i n e , rPA n i u j ü u - iu io M ontgom 18936-1013 Tel: 215 631-9840 A a A SD1468 RF AND MICROWAVE TRANSISTORS WIDE BAND UHF-VHF CLASS C


    OCR Scan     		PDF oD1400 400MHz SD1468 200-500MHz s88sr> 225MHz SD1468 b711 M111 400mhz 10 w transistor RTN 980

    Untitled

    Abstract: No abstract text available
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS F e a tu ie s 2 - 400 MHz 4 WATTS 28 VOLTS 14 dB MIN. AT 400 MHz


    OCR Scan     		PDF MS4000 VK200-19/4B MSC0877

    2SC5531

    Abstract: 2SC553
    Text: 2SC 553 ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR ü mX m m INDUSTRIAL APPLICATIONS U nit O VHF « • * * * V H F Power Ampli t i e r A p p l i c a t i o n « 400MHz r a t>îo w * / jv ) mcytifì-o ( P i n = 4W . Vc c = 260MHS! T ffi fs 88 V )


    OCR Scan     		PDF 400MHz 260MHS! 2sc553 200mA 500mA 150mA 250mA 200MHz 2SC5531 2SC553