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    40010P Search Results

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    40010P Price and Stock

    Advanced Thermal Solutions Inc ATS040040010-PF-13I

    CROSS CUT HEATSINK 40X40X10MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ATS040040010-PF-13I Bulk 24 1
    • 1 $5.44
    • 10 $5.291
    • 100 $5.1752
    • 1000 $5.1752
    • 10000 $5.1752
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    Avnet Americas ATS040040010-PF-13I Bulk 8 Weeks 100
    • 1 -
    • 10 -
    • 100 $5.2164
    • 1000 $5.2164
    • 10000 $5.2164
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    Festo ELGC-BS-KF-45-400-10P

    SPINDLE AXIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELGC-BS-KF-45-400-10P Bulk 1 1
    • 1 $1019.57
    • 10 $1019.57
    • 100 $1019.57
    • 1000 $1019.57
    • 10000 $1019.57
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    MACOM CGH40010P

    RF MOSFET HEMT 28V 440196
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    DigiKey CGH40010P Tray 250
    • 1 -
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    • 100 -
    • 1000 $63.22912
    • 10000 $63.22912
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    Mouser Electronics CGH40010P 202
    • 1 $91.62
    • 10 $83.64
    • 100 $78.02
    • 1000 $78.02
    • 10000 $78.02
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    Richardson RFPD CGH40010P 1
    • 1 $125.41
    • 10 $125.41
    • 100 $125.41
    • 1000 $125.41
    • 10000 $125.41
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    MACOM CG2H40010P

    RF MOSFET HEMT 28V 440196
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CG2H40010P Tray 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $63.22912
    • 10000 $63.22912
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    Mouser Electronics CG2H40010P 324
    • 1 $92.9
    • 10 $84.81
    • 100 $79.12
    • 1000 $79.12
    • 10000 $79.12
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    Richardson RFPD CG2H40010P 1
    • 1 $124.84
    • 10 $124.84
    • 100 $124.84
    • 1000 $124.84
    • 10000 $124.84
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    Festo EGSK-33-400-10P

    ELECTRICAL SLIDE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EGSK-33-400-10P Bulk 1
    • 1 $2524.47
    • 10 $2524.47
    • 100 $2524.47
    • 1000 $2524.47
    • 10000 $2524.47
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    40010P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    str w 6554 a

    Abstract: STR 6554 a
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a

    Cree Microwave

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave

    STR W 5753 a

    Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F

    str w 6554 a

    Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808

    CGH40010

    Abstract: CGH40010F 10UF 470PF CGH40010-TB
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F 10UF 470PF CGH40010-TB

    str 8656

    Abstract: str g 8656 str 6353 CGH40010 str 6308 8627 8656 STR A 6169 10UF 470PF
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str 8656 str g 8656 str 6353 str 6308 8627 8656 STR A 6169 10UF 470PF

    CGH40010F

    Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 JESD22

    CGH40010F

    Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P CGH40010F str w 6554 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P