Untitled
Abstract: No abstract text available
Text: 1N 4001.1N 4007, 1N 4007-1300 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8 9 3 9 9 +
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40011n
Abstract: No abstract text available
Text: 1N 4001.1N 4007, 1N 4007-1300 ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 '= "' '= " '= "> '= "" '= "1 '= " '= "0 #88 # 1
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Untitled
Abstract: No abstract text available
Text: 1N 4001.1N 4007, 1N 4007-1300 ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 '= "' '= " '= "> '= "" '= "1 '= " '= "0 #88 # 1
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Untitled
Abstract: No abstract text available
Text: 1N 4001.1N 4007, 1N 4007-1300 ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 '= "' '= " '= "> '= "" '= "1 '= " '= "0 #88 # 1
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diode IN 4007
Abstract: diode 4007 in 4007 diode diode 1N 4001 IN 4007 diodes 4007 RECTIFIER DIODE 1N 1n 4007 diode 40011n diode
Text: 1N 4001.1N 4007, 1N 4007-1300 ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8 9 3 9 9 + /+ 3 9 9 + 9 9 2 '= "' '= " '= "> '= "" '= "1 '= " '= "0 #88 # 1
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diode 1N 4002
Abstract: 1N4001 1N4007 DO-204AL J-STD-002B Diodes 1n 4004 1N4007 vishay 1N4007 VISHAY 88503 IN 4004 diodes 1n4001 diodes
Text: 1N4001 thru 1N4007 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current
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1N4001
1N4007
DO-204AL
DO-41)
DO-204AL,
UL-94V-0
28-Apr-05
diode 1N 4002
1N4007
DO-204AL
J-STD-002B
Diodes 1n 4004
1N4007 vishay
1N4007 VISHAY 88503
IN 4004 diodes
1n4001 diodes
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1N4000
Abstract: 1N4000 silicon diodes P513 1N4000 - 1N4007 1n4000 a 1n4007 1N4001 1N4007 BY133
Text: 1N4001 . 1N4007 BY133. P513 1 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1600 V. Current 1.0 A. at 75°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point,
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1N4001
1N4007
BY133.
DO-15
1N4000
1N4000
1N4000 silicon diodes
P513
1N4000 - 1N4007
1n4000 a 1n4007
1N4001
1N4007
BY133
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1n 4007 diode
Abstract: diode 1N 4002 1N4000 silicon diodes 1N4000 silicon diode 4004 1N4001 1N4007 BY133 P513
Text: 1N4001 . 1N4007 BY133. P513 1 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1600 V. Current 1.0 A. at 75°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point,
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1N4001
1N4007
BY133.
DO-15
1N4000
1n 4007 diode
diode 1N 4002
1N4000 silicon diodes
1N4000
silicon diode 4004
1N4001
1N4007
BY133
P513
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Untitled
Abstract: No abstract text available
Text: Standard Diodes Features: • • • • • 1 Amperes Silicon Rectifiers High efficiency, Low VF High current capability High reliability High surge current capability Low power loss DO - 41 Dimensions : Inches Millimetres Mechanical Data Case Epoxy Polarity
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element14
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1N4001 thru 1N4007 1.Feature * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability * Diffused junction
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1N4001
1N4007
DO-41,
MIL-STD-750,
DO-41
DO-15
DO-201AD
26/tape
DO-201ADç
DO-201AD
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1N400x
Abstract: No abstract text available
Text: 1N4001 – 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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1N4001
1N4007
DO-41,
MIL-STD-202,
DO-41
1N400x
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1N4001
Abstract: 1N4007 A-405 1N4007 DO-41 package
Text: LESHAN RADIO COMPANY, LTD. 1N4001 thru 1N4007 1.Feature * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability * Diffused junction
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1N4001
1N4007
DO-41,
MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
1N4007
A-405
1N4007 DO-41 package
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Untitled
Abstract: No abstract text available
Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per
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1N4001
1N4007
DO-41,
MIL-STD-202,
DO-41
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diode 1N4001 specifications
Abstract: No abstract text available
Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic
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1N4001
1N4007
DO-41,
MIL-STD-202,
DO-41
diode 1N4001 specifications
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1n4001 SPICE
Abstract: 1N4007 spice 1N4007 diode 1N4007 spice current rating of diodes 1N4001 1N4001 spice model 1N4004 e 4007 4001 1n diode datasheet d 1n4007 diode 1N4007
Text: 1N4001/L - 1N4007/L 1.0A RECTIFIER SPICE MODELS: 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL Flammability
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1N4001/L
1N4007/L
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
DO-41
1n4001 SPICE
1N4007 spice
1N4007
diode 1N4007 spice
current rating of diodes 1N4001
1N4001 spice model
1N4004 e 4007
4001 1n diode
datasheet d 1n4007
diode 1N4007
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1n4004 SPICE
Abstract: 1N4001 1N4007 1N4005 spice 1n4006 SPICE 1n4001 SPICE diode 1N4004 spice 1N4007 DO-41 package DS28002 1N4007L
Text: 1N4001/L - 1N4007/L 1.0A RECTIFIER SPICE MODELS: 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak B A A Low Reverse Leakage Current
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1N4001/L
1N4007/L
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
DO-41,
1n4004 SPICE
1N4007
1N4005 spice
1n4006 SPICE
1n4001 SPICE
diode 1N4004 spice
1N4007 DO-41 package
DS28002
1N4007L
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SN113
Abstract: 58A2 CaseE32 1N4004 e 4007 n4002 N4004 n4007 ED23 1n400 AY 5 4007
Text: SEMIKRON INC 3bE D • &13L>t>71 0002fc,45 B « S E K G SEMIKRON V rsm Rectifier Diodes Ifrms maximum values for continuous operation 2A | 3A V rrm 1N 4002. 4007 1 N 4001.4007 G SN 113 Ifav (sin. 180; Tamb = 45 °C) 1A 1,4 A Types Types Rnntn. Q Cmax.
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4001G
1N4004
1N4006
1N400.
SN113
SO-131
fll3bb71
GG02b4Ã
58A2
CaseE32
1N4004 e 4007
n4002
N4004
n4007
ED23
1n400
AY 5 4007
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Diode IN 5404
Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Text: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A
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3b57S
Diode IN 5404
diode in 5401
IN 4004 diodes
DIODE IN 4002
4002 diode
DIODE 4004
diode IN 4004
5401 diode
diode N 4007
KDA 1.2
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D4148
Abstract: OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode
Text: Diodes and Rectifiers M in ia tu re D iod es in glass package M ax im u m ratings Case D 03 D3 O A 91 O A 90 O A 47 O A 79 IN 4148 D 59 D542 D 4148 C o n s tru c tio n y RM V Pt. C o n ta c t Ge Pt. C o n ta c t Ge G o ld B onded Ge Pt. C o n ta ct Ge Si_ D iffused_
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D4148
D36/50
D36/100
D36/200
D36/400
D36/600
D36/800
D36/1000
OA91
OA91 DIODES
oa47 diode
in4007
IN 4004 diodes
OA47
OA79
IN 4007
OA90 diode
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Scans-0016000
Abstract: No abstract text available
Text: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart
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00D0125
MIL-S-19500/226B
MIL-S-19500/226A
1N3666U)
MIL-S-19500.
-55aC
HIL-S-19500/226B
S961-1161-1)
Scans-0016000
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4001 1n diode
Abstract: 1N4801A 1N4801B 1N4815A 1N4815B 1N4808 1N4815
Text: MIL-S-19500/329C 4 October 1983 SUPERSEDING-MIL-S-19500/329B 4 March 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N4801A THROUGH 1N4815A AND 1N4801B THROUGH 1N4815B JAN, JANTX AND JANTXV This specification 1s approved for use by all Depart
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MIL-S-19500/329C
MIL-S-19500/329B
1N4801A
1N4815A
1N4801B
1N4815B
MIL-S-19500.
4001 1n diode
1N4808
1N4815
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N5399
Abstract: 1n4365 D0201AD 1N4004 or 1N5404 N5397 1N4140 1N4144 1N4007 DO-41 package 1N4145 681000
Text: S C H O T T K Y R EC T IFIER S OptritlfVfl arvd Vrrm lo Mam Vf Type Package <Vo*» An*) (Amp*) (Volt») 1N5817 D O -4 1 20 1.0 25 .4 5 1a 1N5818 D O -4 1 30 1.0 25 055 1N5019 D O -41 40 1.0 25 0.00 S R I 20 D O -41 20 1.0 40 050 SR130 D O -41 30 1.0
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1N5817
DO-41
1N5818
1N5819
SR130
SR140
N5399
1n4365
D0201AD
1N4004 or 1N5404
N5397
1N4140
1N4144
1N4007 DO-41 package
1N4145
681000
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N5401
Abstract: D0201AD N4935 DO-41 6R600 1N4140 D0-201AD DO41 1N4142 1N4007 DO-41 package
Text: INTERNATIONAL SEMICOND 4^E ]> • T00037Ô OOOOOll 471 B I S E » SCH OTTKY RECTIFIERS r Vrrm 7 O p e ra tin g a n d ^ S to ra g e Temp. R a n g e Type 1N5817 Package Volts DO-41 20 1.0 25 1N5818 1N5819 SR 120 DO-41 DO-41 DO-41 30 40 20 1.0 1.0 1.0 25 25
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1N5817
DO-41
1N5818
SR130
SR140
N5401
D0201AD
N4935
6R600
1N4140
D0-201AD
DO41
1N4142
1N4007 DO-41 package
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL SS rectifier DE I 4Ö5S4S2 4855452 INTERNATIONAL RECTIFIER □□D4C1G3 55C 04903 D Data Sheet No. PD-2.005C 7 '- ¿ > INTERNATIONAL RECTIFIER ^ ( 3 IOR 1N4D01 S E R IE S i.OAmp Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics
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1N4D01
1N4001
0004C
1N4001
ZQl-13
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