SCR 200A 500V
Abstract: 50A 1200V SCR CYNA25
Text: POWER COMPONENTS • Motor Control > Suitable for General Purpose AC Switching > IGT 25 mA Max. • Overvoltage Crowbar Protection > VDRM/VRMM 400, 600, 800, 1200V Applications • Voltage Regulation CYNA/CYNB16 • Welding Equipment 16Amp - 400/600/800/1200V - SCR
|
Original
|
PDF
|
CYNA/CYNB16
16Amp
400/600/800/1200V
O-220AB
O-220AB
180A2s
CrydomCYN16
F1704
SCR 200A 500V
50A 1200V SCR
CYNA25
|
DI 762
Abstract: 4500a NTE5381 1200v scr 300A 1200V SCR induction heating induction heating circuits low voltage scr SCR 100A 1200V SCR Gate Drive
Text: NTE5381 Silicon Controlled Rectifier SCR for High Speed Switching, 1200V, 400 Amp, TO200AB Features: D High di/dt with Soft Gate Control D High Frequency Operation D Low Dynamic Forward Voltage Drop D Low Switching Losses at High Frequency Applications:
|
Original
|
PDF
|
NTE5381
O200AB
1400lb.
DI 762
4500a
NTE5381
1200v scr
300A 1200V SCR
induction heating
induction heating circuits
low voltage scr
SCR 100A 1200V
SCR Gate Drive
|
50A 1200V SCR
Abstract: CYNA25
Text: POWER COMPONENTS > Suitable for General Purpose AC Switching > IGT 40mA Max. Applications • Motor Control • Overvoltage Crowbar Protection • Capacitive Discharge Ignition > Isolated and Non-Isolated Tab > VDRM/VRMM 400, 600, 800, 1200V • Voltage Regulation
|
Original
|
PDF
|
CYNA/CYNB25
25Amp
400/600/800/1200V
O-220AB
O-220AB
510A2s
50Apport
CrydomCYN25
F1704
50A 1200V SCR
CYNA25
|
Untitled
Abstract: No abstract text available
Text: 70-W224NIA400SH-M400P datasheet flow NPC 4w 2400 V / 400 A Features flow SCREW 4w housing ● 2400V NPC-topology 2x 1200V ● High power screw interface ● Low inductive interface for external DC-capacitors and paralleling on component level ● Snubber diode for optional asymmetrical inductance
|
Original
|
PDF
|
70-W224NIA400SH-M400P
|
JFET semisouth
Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
Text: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
|
Original
|
PDF
|
ASJE1200R063
O-257
260oC
MIL-PRF-19500
MIL-STD-750
SJEP120R063
O-247
ASJE1200R063
JFET semisouth
SiC JFET
SEMISOUTH
sjep120r0
|
ASJE1200R063
Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
Text: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
|
Original
|
PDF
|
ASJE1200R063
O-258
260oC
MIL-PRF-19500
MIL-STD-750
SJEP120R063
O-247
ASJE1200R063
O-257
SiC JFET
JFET semisouth
SJEP120
SEMISOUTH
silicon carbide JFET
sjep120r0
|
2N19K
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Amp RMS SCRa Major Raring* and Characteristic] 'TIHM!) 'TIAVI »TC 7O- 70* 70- SB1 82' 85- ITSU «50Hi 9GE 1,000' 965 1,000- 905 1,000* |2t
|
Original
|
PDF
|
3N1909
2N19K
2N1793
2NI908
2N2033
2N1804
2N1807
TC-126
TC-26
2N19K
|
ASJE1200R100
Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
Text: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
|
Original
|
PDF
|
O-258
260oC
MIL-PRF-19500
MIL-STD-750
ASJE1200R100
SJEP120R100
O-247
ASJE1200R100
O-257
SiC JFET
JFET semisouth
semisouth sjEp120R100
SEMISOUTH
SJEP120
silicon carbide JFET
|
JFET semisouth
Abstract: SEMISOUTH SiC JFET
Text: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
|
Original
|
PDF
|
O-257
260oC
MIL-PRF-19500
MIL-STD-750
ASJE1200R100
SJEP120R100
O-247
ASJE1200R100
JFET semisouth
SEMISOUTH
SiC JFET
|
C400A
Abstract: FD400R12KF4 f400a
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 16 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
|
Original
|
PDF
|
A15/97
FD400R12KF4
C400A
FD400R12KF4
f400a
|
FD400R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
|
Original
|
PDF
|
A15/97
FD400R12KF4
FD400R12KF4
|
IGBT FF 300 r12
Abstract: FF400R12KF4 FF400R12KF
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
|
Original
|
PDF
|
A15/97
FF400R12KF4
IGBT FF 300 r12
FF400R12KF4
FF400R12KF
|
IGBT FZ 1600 r12 kf4
Abstract: FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
|
Original
|
PDF
|
A15/97
FZ800R12KF4
IGBT FZ 1600 r12 kf4
FZ800R12KF4
4kA IGBT
IGBT module FZ 600 R12
G1 TRANSISTOR
IGBT FZ 600 R12
|
FZ800R12KF4
Abstract: IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
|
Original
|
PDF
|
A15/97
FZ800R12KF4
FZ800R12KF4
IGBT FZ 1200 r12
IGBT module FZ 600 R12
IGBT FZ 600 R12
G1 TRANSISTOR
800R12KF4
IGBT FZ 1600 r12 kf4
IGBT FZ 200
|
|
|
G1 TRANSISTOR
Abstract: FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
|
Original
|
PDF
|
A13/97
FF600R12KF4
G1 TRANSISTOR
FF 150 R 1200 kf igbt
FF600R12KF4
Transistor g1
IGBT 600V 600A
JE 800 transistor
|
FD600R12KF4
Abstract: G1 TRANSISTOR
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
|
Original
|
PDF
|
A13/97
FD600R12KF4
FD600R12KF4
G1 TRANSISTOR
|
G1 TRANSISTOR
Abstract: FD600R12KF4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 16 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
|
Original
|
PDF
|
A13/97
FD600R12KF4
G1 TRANSISTOR
FD600R12KF4
|
FZ1200R12KF4
Abstract: IGBT FZ 1200 r12 fz 1000 r12 kf 4 70nH IC 7800 FZ1200R12KF fz 1200 r12 kf 4 eupec FZ 50 A 12 KF
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
|
Original
|
PDF
|
A15/97
FZ1200R12KF4
FZ1200R12KF4
IGBT FZ 1200 r12
fz 1000 r12 kf 4
70nH
IC 7800
FZ1200R12KF
fz 1200 r12 kf 4
eupec FZ 50 A 12 KF
|
40TTS12
Abstract: scr 1a 1200V DSA00357877
Text: Bulletin I2167 04/05 SAFEIR Series 40TTS12 PHASE CONTROL SCR Description/ Features The 40TTS12 SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 140°C junction temperature.
|
Original
|
PDF
|
I2167
40TTS12
40TTS12
O-220AC
scr 1a 1200V
DSA00357877
|
FZ1200R12KF4
Abstract: ic 7800 fz 1200 r12 kf 4 KF 35 transistor IGBT module FZ 1200 fz 1000 r12 kf 4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
|
Original
|
PDF
|
A15/97
FZ1200R12KF4
FZ1200R12KF4
ic 7800
fz 1200 r12 kf 4
KF 35 transistor
IGBT module FZ 1200
fz 1000 r12 kf 4
|
FD400R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
|
Original
|
PDF
|
A15/97
FD400R12KF4
|
IGBT FF 300 r12
Abstract: FF400R12KF4
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2
|
Original
|
PDF
|
A15/97
IGBT FF 300 r12
FF400R12KF4
|
FD600R12KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 600 R 12 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E1 C1 G1 M4 7 28 2,5 deep screwing depth max. 8 16 40 2,5 deep 53 E1 C2 K C1 E2 (A) E1 G1
|
Original
|
PDF
|
A13/97
FD600R12KF4
|
TOSHIBA THYRISTOR
Abstract: thyristor 80A, 1200V
Text: 9 0 9 7 2 5 0 TOSHIBA D IS C R E T E /O P T O 39C 02324 Bl-DIRECTIONAL TRIODE THYRISTOR (TRIAC) TOSHIBA { DI SCRET E/ OP TO } 3T 1200V 80A SM80Q13 DE^iO^SO □□□23S4 □ ( 3) : ' Í.6MAX. MAXIMUM RATINGS SNM BOL C H A RA C TERISTIC RATING 400 Repetitive Peak SM80G13
|
OCR Scan
|
PDF
|
SM80Q13
SM80G13
SM80J
SM80Q13
TOSHIBA THYRISTOR
thyristor 80A, 1200V
|
