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    4.20 MA 0-5 MA OUTPUT Search Results

    4.20 MA 0-5 MA OUTPUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    4.20 MA 0-5 MA OUTPUT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    variable frequency drive circuit diagram

    Abstract: ldr 3 pin metal package variable frequency drive block diagram el 380 signal conditioning circuits for ldr ena vin dim gnd 3 pins LDR Datasheet ldr 07 ldr resistor LDR voltage range
    Text: SM8146A EL Driver IC OVERVIEW The SM8146A is a dedicated EL Electro Luminescence driver IC, capable of driving EL sheet up to 30cm2 in size. The EL drive circuit uses a technique that generates smooth sine wave EL drive waveforms without an output resistor, which has the advantage of preventing EL sheet audible noise, eliminating the need for additional peripheral components and a corresponding drop in power efficiency. Also, the EL drive voltage is constant-voltage controlled and is unaffected by supply voltage fluctuations, so that there are no EL brightness


    Original     		PDF SM8146A SM8146A 30cm2 NC0512AE variable frequency drive circuit diagram ldr 3 pin metal package variable frequency drive block diagram el 380 signal conditioning circuits for ldr ena vin dim gnd 3 pins LDR Datasheet ldr 07 ldr resistor LDR voltage range

    F100K

    Abstract: No abstract text available
    Text: 100316 Low Power Quad Differential Line Driver with Cut-Off General Description Features The 100316 is a quad differential line driver with output cut-off capability. The outputs are designed to drive a doubly terminated 50Ω transmission line 25Ω equivalent impedance in an ECL backplane. The 100316 is ideal for driving


    Original     		PDF

    AP560

    Abstract: No abstract text available
    Text: 8/05 AP560 10 TO 500 MHz TO-8 CASCADABLE AMPLIFIER AP560 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Third Order I.P. . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF AP560 OUTP-102 AP560

    AP560

    Abstract: No abstract text available
    Text: 8/05 AP560 10 TO 500 MHz TO-8 CASCADABLE AMPLIFIER AP560 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Third Order I.P. . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF AP560 OUTP50 AP560

    Circuit diagram of LDR

    Abstract: variable frequency drive circuit diagram LQH3NPN VLS3012T ldr 3 pin metal package LDR Datasheet panasonic 614 battery variable frequency drive block diagram 1SS403 GRM3192C2A222JA01
    Text: SM8146AD1 EL Driver IC OVERVIEW The SM8146AD1 is a dedicated EL Electro Luminescence driver IC, capable of driving EL sheet up to 30cm2 in size. The EL drive circuit uses a technique that generates smooth sine wave EL drive waveforms without an output resistor, which has the advantage of preventing EL sheet audible noise, eliminating the need


    Original     		PDF SM8146AD1 SM8146AD1 30cm2 NC0616AE Circuit diagram of LDR variable frequency drive circuit diagram LQH3NPN VLS3012T ldr 3 pin metal package LDR Datasheet panasonic 614 battery variable frequency drive block diagram 1SS403 GRM3192C2A222JA01

    1SS403

    Abstract: GRM3192C2A222JA01 GRM3192C2A332JA01 GRM3192C2A472JA01 SM8146AD1 LQH3NPN221NG0 ena vin dim gnd small ldr 2 pins SM8146AD ldr 3 pin metal package
    Text: SM8146AD1 EL Driver IC OVERVIEW The SM8146AD1 is a dedicated EL Electro Luminescence driver IC, capable of driving EL sheet up to 30cm2 in size. The EL drive circuit uses a technique that generates smooth sine wave EL drive waveforms without an output resistor, which has the advantage of preventing EL sheet audible noise, eliminating the need


    Original     		PDF SM8146AD1 SM8146AD1 30cm2 NC0616BE 1SS403 GRM3192C2A222JA01 GRM3192C2A332JA01 GRM3192C2A472JA01 LQH3NPN221NG0 ena vin dim gnd small ldr 2 pins SM8146AD ldr 3 pin metal package

    AP560

    Abstract: No abstract text available
    Text: Rev. 5/10 10 TO 500 MHz TO-8 CASCADABLE AMPLIFIER AP560 AP560 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Output Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Third Order I.P. . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF AP560 AP560

    2SC632

    Abstract: No abstract text available
    Text: SC632 Fixed 5.0V Output Charge Pump Regulator POWER MANAGEMENT Features Description „ The SC632 is a high-current voltage regulator using Semtech’s proprietary low-noise charge pump technology. Performance is optimized for use in single Li-Ion battery cell applications. The regulator provides the performance of a linear, low drop-out LDO voltage regulator


    Original     		PDF SC632 SC632 2SC632

    H2D MARKING CODE

    Abstract: H2D Marking h2d diode H2D SOT23
    Text: MC74HC1G08 Single 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.


    Original     		PDF MC74HC1G08 MC74HC MC74HC1G08DFT1 MC74HC1G08DFT2 MC74HC1G08DTT1 H2D MARKING CODE H2D Marking h2d diode H2D SOT23

    diode marking H1D

    Abstract: H1D SOT23 MC74HC1G00
    Text: MC74HC1G00 Single 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.


    Original     		PDF MC74HC1G00 5/SC59 MC74HC1G00DFT1 MC74HC1G00DFT2 MC74HC1G00DTT1 diode marking H1D H1D SOT23

    marking h5d

    Abstract: No abstract text available
    Text: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to


    Original     		PDF MC74HC1G04 MC74HC 5/SC59 MC74HC1G04DFT1 MC74HC1G04DFT2 MC74HC1G04DTT1 marking h5d

    AZ100EL07

    Abstract: AZ100EL07D AZ10EL07 AZ10EL07D E107 MC100EL07 MC10EL07
    Text: DATA SHEET AZ10EL07 AZ100EL07 ARIZONA MICROTEK, INC. 2-Input XOR/XNOR FEATURES • • • • • 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07


    Original     		PDF AZ10EL07 AZ100EL07 260ps MC10EL07 MC100EL07 AZ10EL/100EL07 AZ100EL07 AZ100EL07D AZ10EL07 AZ10EL07D E107 MC100EL07 MC10EL07

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2:1 M u ltip le x e r M C 10EL58 M C 100EL58 The MC10EL/100EL58 is a 2:1 multiplexer. The device is functionally equivalent to the E158 device with higher performance capabilities. With propagation delays and output transition times significantly faster than


    OCR Scan     		PDF 10EL58 100EL58 MC10EL/100EL58 230ps

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Differential Data and Clock D Flip-Flop MC10EL52 MC100EL52 The M C 10EL/100EL52 is a differential data, differential clock D flip-flop with reset. The device is functionally equivalent to the E452 device with higher perform ance capabilities. W ith propagation delays and output


    OCR Scan     		PDF 10EL/100EL52 DL140

    Untitled

    Abstract: No abstract text available
    Text: y 'Q . ; EMI :c> D . C OR TECHNICAL DATA 2-Htiftut AND/NAND M C10EL04 M C100EL04 Ths .VI31 0-E—i 100B!L04 is a 2-input A N D /N A N D gate. The device is f jr c t io r all\ equ'i/alent to the E104 device with higher performance suabilities;. W ith propagation delays and output transition times


    OCR Scan     		PDF C10EL04 C100EL04 240ps 75ki2 100EL BR1330

    Untitled

    Abstract: No abstract text available
    Text: *SYNERGY Clockworks PRELIMINARY SY10EL33 /> n n /in c n 4 d iv id e r SEMICONDUCTOR SY00EL33 DESCRIPTION FEATURES 650ps propagation delay 4.0GHz toggle frequency High bandwidth output transitions Internal 75KQ Input pull-down resistors ESD protection of 2000V


    OCR Scan     		PDF SY10EL33 SY00EL33 650ps SY10EL7100EL33 SY10EL33ZC SY100EL33ZC GG1352

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2:1 M ultiplexer MC10EL58 MC100EL58 The MC10EL/100EL58 is a 2:1 multiplexer. The device is functionally equivalent to the E158 device with higher performance capabilities. With propagation delays and output transition times significantly faster than


    OCR Scan     		PDF MC10EL58 MC100EL58 MC10EL/100EL58 230ps

    MC100EL35

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JK Flip-Flop M C10EL35 M C100EL35 The M C10EL/100EL35 is a high speed JK flip-flop. The J/K data enters the master portion of the flip-flop when the clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of the clock.


    OCR Scan     		PDF C10EL35 C100EL35 C10EL/100EL35 525ps DL140 MC100EL35

    SY100EL32

    Abstract: SY100EL32ZC SY10EL32ZC
    Text: ❖ O m v in P D SYNERGY S EM IC O N D UC TO R 2 D IV ID E R DESCRIPTION FEATURES 51Ops propagation delay 3.0GHz toggle frequency High bandwidth output transitions Internal 75KQ Input pull-down resistors ESD protection of 2000V The SY10EL/100EL32 are integrated +2 dividers. The


    OCR Scan     		PDF syioel32 SY100EL32 SY10EL/100EL32 SY10EL32ZC SY100EL32ZC 1GG13Ã 134fl SY100EL32

    MC100EL35

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JK Flip-Flop MC10EL35 MC100EL35 The MC10EL7100EL35 is a high speed JK flip-flop. The J/K data enters the master portion of the flip-flop when the clock is LOW and is transferred to the slave, and thus the outputs, upon a positive transition of


    OCR Scan     		PDF MC10EL35 MC100EL35 MC10EL7100EL35 525ps DL140 MC100EL35

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D Flip-Flop With Set and Reset MC10EL31 MC100EL31 The MC10EL/100EL31 is a D flip-flop with set and reset. The device is functionally equivalent to the E131 device with higher performance capabilities. With propagation delays and output transition times


    OCR Scan     		PDF MC10EL/100EL31 475ps 75ki2 MC10EL31 MC100EL31 BR1330

    A475

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C10EL05 M C100EL05 2-lnput D ifferential AND/NAND The MC10EL7100EL05 is a 2-input differential AND/NAND gate. The device is functionally equivalent to the E404 device with higher performance capabilities. With propagation delays and output transition


    OCR Scan     		PDF C10EL05 C100EL05 MC10EL7100EL05 BR1330 A475

    e112

    Abstract: E-112
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C10EL12 M C100EL12 Low Im pedance Driver The MC10EL/100EL12 is a low impedance drive buffer. With two pairs of OR/NOR outputs the device is ideally suited for high drive applications such as memory addressing. The device is a function equivalent to the


    OCR Scan     		PDF MC10EL12/MC100EL12 290ps C10EL12 C100EL12 100EL BR1330 e112 E-112

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2:1 Multiplexer MC10EL58 MC100EL58 T he M C 10E L /100E L58 is a 2:1 multiplexer. The device Is functionally equivalent to the E158 device with higher performance capabilities. With propagation delays and output transition times significantly faster than


    OCR Scan     		PDF MC10EL58 MC100EL58 /100E 230ps BR1330 3b7252