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    4-PIN DIP OPTOISOLATOR TRANSISTOR OUTPUT Search Results

    4-PIN DIP OPTOISOLATOR TRANSISTOR OUTPUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP627M Toshiba Electronic Devices & Storage Corporation Photocoupler (photodarlington transistor output), DC input, 5000 Vrms, DIP4 Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    4-PIN DIP OPTOISOLATOR TRANSISTOR OUTPUT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTE3041

    Abstract: No abstract text available
    Text: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions


    Original     		NTE3041 526-NTE3041 NTE3041 PDF

    NTE3041

    Abstract: No abstract text available
    Text: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions


    Original     		NTE3041 NTE3041 3550Vpk PDF

    MOTOROLA OPTOELECTRONIC ic pin diagram

    Abstract: triac driver opto moc3021 opto d207 MCT2E soic D217 OPTO IC 4N25 triac 730A-04 a4n33 opto triac moc3010 MOC3041 opto isolator
    Text: Optoelectronic Devices In Brief . . . Motorola’s families of optoelectronic components encompass red and infrared GaAs emitters and silicon detectors that are well matched for a variety of applications. Optoisolators Motorola’s “Global” 6–Pin Dual In–line Package DIP


    Original     		MOC2A60-5 MOC2A60-10 02/Style 01/Style MOTOROLA OPTOELECTRONIC ic pin diagram triac driver opto moc3021 opto d207 MCT2E soic D217 OPTO IC 4N25 triac 730A-04 a4n33 opto triac moc3010 MOC3041 opto isolator PDF

    ProtoPowerSwitch Boosterpack

    Abstract: protopowerswitch 24V 8 pins DIP relay pinout diagram AC DC transformerless power supply omron optoisolator transformerless power supply 2N5551B SRD SONGLE RELAY transformerless power supply circuit dimmer MSP430
    Text: DESIGNER CIRCUITS, LLC www.designercircuits.com Revised 3/2014 ProtoPowerSwitch Boosterpack FEATURES • AC input, Dual DC output Transformerless Power Supply Resistive Capacitive • Switching Element SPDT Relay TRIAC SCR • Zero-volt detection for phase angle firing of TRIAC/SCR


    Original     		PDF

    NTE3043

    Abstract: No abstract text available
    Text: NTE3043 Optoisolator NPN Transistor Output Description: The NTE3043 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 4–Lead DIP type package. Features: D High Output Voltage: V BR CEO = 80V


    Original     		NTE3043 NTE3043 300pps) 200mA, PDF

    NTE3042

    Abstract: dsa0023459
    Text: NTE3042 Optoisolator NPN Transistor Output Description: The NTE3042 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6–Lead DIP type package. Features: D 1500V Isolation


    Original     		NTE3042 NTE3042 dsa0023459 PDF

    1A transistor

    Abstract: NTE3222 optoisolator high voltage high voltage diodes
    Text: NTE3222 Optoisolator NPN Transistor Output Description: The NTE3222 is an optically coupled isolator in a 4–Lead DIP type package containing a GaAs light emitting diode and an NPN silicon phototransistor. Features: D High Isolation Voltage D High Collector–Emitter Voltage


    Original     		NTE3222 NTE3222 1A transistor optoisolator high voltage high voltage diodes PDF

    NTE3087

    Abstract: No abstract text available
    Text: NTE3087 Optoisolator High Speed, Open Collector, NAND Gate Output Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector,


    Original     		NTE3087 NTE3087 2500Vrms PDF

    65083

    Abstract: DM8820 NE555 pulse generator opto-isolators bidirectional
    Text: Issued July 1988 F9085 High speed logic-logic opto-isolators Stock numbers 650-829, 650-835, 650-841, 650-857 These opto-isolators are the first family of truly logic compatible optically coupled interface gates. The family consists of four device types offering LSTTL


    Original     		F9085 15Mbaud NE555 74OL6001 65083 DM8820 NE555 pulse generator opto-isolators bidirectional PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE3220 & NTE3221 Optoisolator NPN Transistor Output Features: D Current Transfer Ratio: CTR: 50% Min @ IF = 5mA, VCE = 5V D High Input–Output Isolation Voltage: VISO = 5000Vrms D Compact DIP Package: NTE3220: 2–Channel Type 8–Lead DIP NTE3221: 4–Channel Type (16–Lead DIP)


    Original     		NTE3220 NTE3221 5000Vrms NTE3220: NTE3221: PDF

    NTE3221

    Abstract: NTE3220
    Text: NTE3220 & NTE3221 Optoisolator NPN Transistor Output Features: D Current Transfer Ratio: CTR: 50% Min @ IF = 5mA, VCE = 5V D High Input–Output Isolation Voltage: VISO = 5000Vrms D Compact DIP Package: NTE3220: 2–Channel Type 8–Lead DIP NTE3221: 4–Channel Type (16–Lead DIP)


    Original     		NTE3220 NTE3221 5000Vrms NTE3220: NTE3221: NTE3221 NTE3220 PDF

    Untitled

    Abstract: No abstract text available
    Text: M M O T O R O L A — — — M C33153 Advance Information Single IGBT G ate Driver The MC33153 is specifcally designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving


    OCR Scan     		C33153 MC33153 DCH7D13 PDF

    NTE3096

    Abstract: No abstract text available
    Text: NTE3096 Optoisolator Low LED Drive NPN Transistor Output Description: The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current,


    Original     		NTE3096 NTE3096 500VDC, PDF

    MC33153

    Abstract: HCPL4053 single igbt gate driver
    Text: ^ M O T O R O L A - M C 33153 Single IGBT G ate Driver The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor con­ trol and uninterruptable power supplies. Although designed for driving dis­


    OCR Scan     		MC33153 HCPL4053 single igbt gate driver PDF

    nte3095

    Abstract: ir led PHOTODIODE
    Text: NTE3095 Optoisolator Description: The NTE3095 is a dual photocoupler optoisolator in an 8–Lead DIP type package consisting of a pair of Gallium Aluminum Arsenide light emitting diodes and integrated photodetectors. Separate connections for the photodiode bias and output transistor collectors improve the speed up to a hundred


    Original     		NTE3095 NTE3095 ir led PHOTODIODE PDF

    NTE3040

    Abstract: No abstract text available
    Text: NTE3040 Optoisolator NPN Transistor Output Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor. Absolute Maximum Ratings: TA = +25°C, unless otherwise specified Infrared Emitting Diode


    Original     		NTE3040 NTE3040 200mW 500VDC PDF

    Zener diode 10b3

    Abstract: 9V 1A Transformer specification DIODE 10B3 D44C3A sr104 diode 10v ZENER DIODE Transformer 9v 1A 470 mf 16v LM3578 9V 2A Transformer specification
    Text: INTRODUCTION Isolated power supplies for I O cards are required to provide multiple outputs typically 9V at 0 mA–120 mA and 5V at 0 mA – 200 mA from a 3 3V input The transformer peak primary currents are generally very high there by eliminating the choice of many popular low-cost integrated circuits The


    Original     		LM3578A D44C3A LM3578A Zener diode 10b3 9V 1A Transformer specification DIODE 10B3 sr104 diode 10v ZENER DIODE Transformer 9v 1A 470 mf 16v LM3578 9V 2A Transformer specification PDF

    SOIC-8 OPTOCOUPLER 531

    Abstract: DC14C232 transistor 2n3904 RS-232E HCPL-0560 HCPL-0561 RS232E optoisolators HP
    Text: Dual Channel Bi-directional High Speed Optoisolators Technical Data HCPL-0560 HCPL-0561 Features • Bi-directional Configurations in SOIC-8 Package • Available Configurations: Vcc Common: HCPL-0560 Ground Common: HCPL-0561 • High Speed: 1 MBd • TTL Compatible


    OCR Scan     		HCPL-0560 HCPL-0561 HCPL-0561 UL1577 TIA/EIA-232-E optoisol15 RS-232-E HCPL-0560) SOIC-8 OPTOCOUPLER 531 DC14C232 transistor 2n3904 RS-232E RS232E optoisolators HP PDF

    hcpl4053

    Abstract: IL33153 ac motor speed control circuit diagram with IGBT HCPL-4053 what is fast IGBT transistor desaturation design Discrete IGBTS wiring diagram brushless AC motor HALF BRIDGE NPN DARLINGTON POWER MODULE igbt ac motor speed control
    Text: TECHNICAL DATA IL33153 Single IGBT Gate Driver The IL33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing


    Original     		IL33153 IL33153 012AA) hcpl4053 ac motor speed control circuit diagram with IGBT HCPL-4053 what is fast IGBT transistor desaturation design Discrete IGBTS wiring diagram brushless AC motor HALF BRIDGE NPN DARLINGTON POWER MODULE igbt ac motor speed control PDF

    NTE3040

    Abstract: No abstract text available
    Text: NTE3040 Optoisolator NPN Transistor Output Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6−Lead DIP type package coupled with a silicon phototransistor. Applications: D Power Supply Regulators D Digital Logic Inputs D Microprocessor Inputs


    Original     		NTE3040 NTE3040 150mW 500VDC PDF

    pin configuration 2N3053 transistor

    Abstract: transistor 2N3053 SOIC-8 OPTOCOUPLER 531 2N3053 E55361 HCPL-0560 HCPL0561 HCPL-0561 HCPL-4502 2n3904 equivalent transistor
    Text: Dual Channel Bi-directional High Speed Optoisolators Technical Data HCPL-0560 HCPL-0561 Features Description • Bi-directional Configurations in SOIC-8 Package • Available Configurations: VCC Common: HCPL-0560 Ground Common: HCPL-0561 • High Speed: 1 MBd


    Original     		HCPL-0560 HCPL-0561 UL1577 2N3904 DS14C232 RS-232-E HCPL-0561) TIA/EIA-232-E pin configuration 2N3053 transistor transistor 2N3053 SOIC-8 OPTOCOUPLER 531 2N3053 E55361 HCPL-0560 HCPL0561 HCPL-0561 HCPL-4502 2n3904 equivalent transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: WhoI H E W L E T T mLtiMP A C K A R D Dual Channel Bi-directional High Speed O ptoisolators Technical Data HCPL-0560 HCPL-0561 Features D escription • Bi-directional Configurations in SOIC-8 Package • Available Configurations: VCc Common: HCPL-0560 Ground Common: HCPL-0561


    OCR Scan     		HCPL-0560 HCPL-0561 UL1577 2N3904) RS-232-E HCPL-0561. 2N3904 DC14C232) PDF

    NTE3098

    Abstract: No abstract text available
    Text: NTE3098 Optoisolator Phototransistor w/NPN Transistor Output Description: The NTE3098 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a single 4–Lead DIP type package. Features: D Collector–Emitter Voltage: VCEO = 55V Min


    Original     		NTE3098 NTE3098 5000Vrms 100Isolation PDF

    4pin opto isolator 610-2

    Abstract: 307-064 4pin opto isolator 308-613 4-pin optoisolator 307064 SFH610-2 BZX61 ISO74 dual channel opto triac
    Text: Issued November 1994 F18512 Transistor/Darlington opto-isolators A comprehensive range of 'general purpose' opto-isolators which consist of a light emitting diode coupled to a silicon phototransistor. The range comprises the following, and offers variations on Isolation Voltage, Current transfer ratio,


    Original     		F18512 SFH610-2 CNY17-1 CNY17-3 H11A1 MCT2201 20kHz. IN4004 240Vac 4pin opto isolator 610-2 307-064 4pin opto isolator 308-613 4-pin optoisolator 307064 BZX61 ISO74 dual channel opto triac PDF